IR 1J "MARKING CODE Search Results

MMBD2836

Abstract: MMBD2835 ir 1j "marking code"
Contextual Info: MMBD2835, MMBD2836 Monolithic Dual Switching Diodes 3 1 2 MMBD2835 Marking Code: “1H” MMBD2836 Marking Code: “1J” SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25OC Reverse Voltage Symbol Value Unit MMBD2835 VR 35 V MMBD2836 VR 75 V IF 100

MMBD2835

Abstract: MMBD2836 Substrate alumina fr 51
Contextual Info: MMBD2835, MMBD2836 Monolithic Dual Switching Diodes 3 1 2 MMBD2835 Marking Code: “1H” MMBD2836 Marking Code: “1J” SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25OC Reverse Voltage Symbol Value Unit MMBD2835 VR 35 V MMBD2836 VR 75 V IF 100

TG 0201

Abstract: ir 1j "marking code"
Contextual Info: : • ^ O A _ R K Z 3G ^ m thick film O.BO/o. <1o/otolerance. 50ppml#C * _ _ ■ _ chip resistor vnA SPEER KOA c o r r o ELECTRONICS, ci c p T o n u ir c iINC. m p RoHS EU features • High precision resistor with T.C.R. of c o m p l i a n t

Contextual Info: ー ※ T111ax T H I R DA N G L EP R O J EC iI O N ト ! 』 CODE i÷TEEJ 1 M 1 i I LJ CAPACITANCE1D F 中 ※L 103JM3 0.01 E※T (123) f I (153) 1 1 I 1 1J183JM3 1J223JM3 O . 018 ( 183) f I 1 1 f I O . 022 (223) 1 1 1 1 f I U 1J273JM3 O . 027 ( 273) f I

1j104j

Abstract: .1J 100v capacitor 1j 63v CAPACITOR z j k voltage capacitor polyester 1j 1H22 .1j 105 capacitor 274J 1j capacitor film capacitor Dimensions
Contextual Info: Stacked Metallized Film Capacitor ECQ -V ECQ-V Series This capacitor is co n structe d by stacking double side m etallized polyester w ith a polycarbonate coating. Because of the mixed diele ctric system and advanced m auufacturin g techniques, the perform ance is excellent and the size is greatly

RK73k KOA

Abstract: RK73 KOA RK73B
Contextual Info: RESISTORS TECHNOLOGY OF TOMORROW FLAT CHIP THICK FILM 5% • 2% GENERAL PURPOSE RK73B STRUCTURE 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Top termination (Ag Pd) Bottom termination (Ag Pd) Resistive layer Glass layer Trimming cut Protective layer End termination

RK73H

Abstract: KOA RK73 DSA00347
Contextual Info: RESISTORS TECHNOLOGY OF TOMORROW FLAT CHIP THICK FILM 1% • 0.5% PRECISION RK73H STRUCTURE 1 2 3 4 5 6 7 8 9 10 IDENTIFICATION COATING COLOR TYPE RK73H 1H RK73H 1E Black RK73H 1J Blue Ceramic substrate Top termination (Ag Pd) Bottom termination (Ag Pd)

TRANSISTOR S2d

Contextual Info: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23

KOA RN73

Abstract: RK73H
Contextual Info: RESISTORS TECHNOLOGY OF TOMORROW THICK FILM 1% • 0.5% PRECISION RK73 H RESISTORS FLAT CHIP STRUCTURE 1 2 3 4 5 6 7 8 9 10 IDENTIFICATION COATING COLOR TYPE RK73H 1H RK73H 1E Black RK73H 1J Blue Ceramic substrate Top termination (Ag Pd) Bottom termination (Ag Pd)

KOA RK73

Abstract: RK73H
Contextual Info: RESISTORS TECHNOLOGY OF TOMORROW THICK FILM 1% • 0.5% PRECISION RK73 H RESISTORS FLAT CHIP STRUCTURE 1 2 3 4 5 6 7 8 9 10 IDENTIFICATION COATING COLOR TYPE RK73H 1H RK73H 1E Black RK73H 1J Blue Ceramic substrate Top termination (Ag Pd) Bottom termination (Ag Pd)

KOA RN73

Abstract: KOA RF73 RK73K KOA RK73 RN73 RK73 KOA
Contextual Info: RESISTORS FLAT CHIP THICK FILM 5% • 2% GENERAL PURPOSE RK73 B STRUCTURE 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Top termination (Ag Pd) Bottom termination (Ag Pd) Resistive layer Glass layer Trimming cut Protective layer End termination Diffusion barrier (Ni)

KOA RN73

Contextual Info: RESISTORS TECHNOLOGY OF TOMORROW THICK FILM 1% • 0.5% PRECISION RK73 H RESISTORS FLAT CHIP STRUCTURE 1 2 3 4 5 6 7 8 9 10 IDENTIFICATION COATING COLOR TYPE RK73H 1H RK73H 1E Black RK73H 1J Blue Ceramic substrate Top termination (Ag Pd) Bottom termination (Ag Pd)

Contextual Info: RESISTORS TECHNOLOGY OF TOMORROW FLAT CHIP STRUCTURE THICK FILM 1% • 0.5% PRECISION RK73 H 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Top termination (Ag Pd) Bottom termination (Ag Pd) Resistive layer Glass layer Trimming cut Protective layer End termination

RK73 KOA

Abstract: KOA RN73 RK73K
Contextual Info: RESISTORS TECHNOLOGY OF TOMORROW FLAT CHIP THICK FILM 5% • 2% GENERAL PURPOSE RK73 B STRUCTURE 1 2 3 4 5 6 7 8 9 10 Ceramic substrate Top termination (Ag Pd) Bottom termination (Ag Pd) Resistive layer Glass layer Trimming cut Protective layer End termination

Contextual Info: i H I R DA N G L EP R O J E C T I O N ALTERATION 1 S S U E ITEM CODE 1 lJ123JMA lJ153JMA O . 012 1 23 1 1 O . 015 ( 153) lJ183JMA 1J223JMA O . 018 O . 022 O . 027 ( 183) 1 1 (223) (273) 1 O . 033 O . 039 O . 047 O . 056 O . 068 O . 082 O .1 O . 12 O . 15

Contextual Info: K O FLAT CHIP RESISTORS a\ SPEER ELECTRONICS, INC. DESCRIPTION OF CHIP RESISTORS - Seven 7 A vailable S izes - 0402, 0603, 0805 1206, 1210, 2010, 2512 - 1/16 W att to 1 W att Power R atings - 0.1 O hm to 22 M eg O hm R e sistance R ange - T ight Tolerance and Low T C R Available

Contextual Info: [ O A _RK73B fe a tu re s • R u 0 2 thick film resistor elem ent •A nti-leaching nickel barrier terminations • 9 0 /1 0 solder plated terminations, standard •A vailable in 100% tin terminations no lead • Also available with epoxy bondable palladium silver

Contextual Info: SIEMENS BSP 170 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated ' ^GS th = -2.1.-4.0 V Type ^DS BSP 170 -60 V Type BSP 170 Ordering Code Q67000-S . . . -1.7 A ffDS(on) Package 0.35 Q, SOT-223 Marking Tape and Reel Information

a124 es

Abstract: rkm v
Contextual Info: E R D 3 2 3 A * ± 'J : Outline Drawings -K FAST RECOVERY DIODE Features : Marking S u p e r h ig h speed s w itc h in g • ffiVF A5 - 3 - K Color code ; 0 range Low V F B sW i Abridged Large c u rre n t • SSft is-ti ty p e name 5 7. V oltage class

MARKING K38

Contextual Info: Central" CMKD2836 CMKD2838 Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL PAIR HIGH SPEED SWITCHING SILICON DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD2836 and CMKD2838 types consist of four high speed switching diodes arranged in two electrically iso­

1a12v

Abstract: SL1-K
Contextual Info: SL1A . SL1M SL1A . SL1M Surface Mount Silicon Rectifier Diodes Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2013-01-11 Nominal current Nennstrom 0.6±0.25 ±0.2 3.7 ±0.2 50.1000 V Plastic case Kunststoffgehäuse SOD-123FL 0.02 g

Marking 1j SOD123

Abstract: marking CODE SA2 1000 1A SOD-123 Marking 1J sod-123 1J sod-123 SA4 marking marking sa4
Contextual Info: SL1A . SL1M SL1A . SL1M Surface Mount Silicon Rectifier Diodes Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2010-12-06 Nominal current – Nennstrom 1.1 1.3 ±0.2 3.7 ±0.2 Repetitive peak reverse voltage Periodische Spitzensperrspannung

SL1M

Abstract: SL1-B SL1-K SOD123FL
Contextual Info: SL1A . SL1M SL1A . SL1M Surface Mount Silicon Rectifier Diodes Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2012-11-21 Nominal current Nennstrom 0.6 ±0.25 1.3 ±0.15 0.1-0.3 2.8±0.2 Repetitive peak reverse voltage Periodische Spitzensperrspannung

1J sod-123

Abstract: marking CODE SA2 Marking 1j SOD123
Contextual Info: SL1A . SL1M SL1A . SL1M Surface Mount Silicon Rectifier Diodes Silizium-Gleichrichterdioden für die Oberflächenmontage Version 2010-10-20 Nominal current – Nennstrom 1.1 1.3 Repetitive peak reverse voltage Periodische Spitzensperrspannung 0.8 1.2 0.02 g