IR 1838 T TRANSISTOR Search Results

IR 1838

Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

IR 1838 T

Abstract: B120 HFA06TB120 HFA16TB120 IRFP250
Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

C2335

Contextual Info: International IOR Rectifier PD 9.1573 IRG4PH50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing

DS2003

Abstract: DS9667 ds2004
Contextual Info: DS2003/DS9667/DS2004 National Semiconductor & DS2003/DS9667/DS2004 High Current/Voltage Darlington Drivers General Description The DS2003/DS9667/DS2004 are comprised of seven high voltage, high current NPN Darlington transistor pairs. All units feature common emitter, open collector outputs. To

vs 1838 b

Abstract: 98-I
Contextual Info: PD- 91788 International IQ R Rectifier IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies

IR 1838

Abstract: irm 1838 HFA30PB120
Contextual Info: Preliminary Data Sheet PD-2.604 05/97 HFA30PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI

TL 1838

Abstract: IRG4PH50KD
Contextual Info: International 1GR Rectifier PD- 9.1575 IRG4PH50KD PRELIM INARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control tsc=10fis, V cc = 720V , T j = 125°C,

IR 1838 3v

Abstract: IR 1838 irm 1838 DIODE 76A HFA16TB120
Contextual Info: Preliminary Data Sheet PD -2.492 05/97 HFA16TB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI

2SC1811

Abstract: 2SA896 138D 2SA1015
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English

IR 1838 3v

Abstract: IR 1838 HFA16PB120 CECC40101
Contextual Info: PD -2.364A HFA16PB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching

C1030 transistor

Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032
Contextual Info: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses

Contextual Info: P D 9.1573 International IOR Rectifier IRG4PH50UD PRELIMINARY INSULATED G A TE BIPOLAR TRANSISTOR WITH ULTRAFAST SO FT R EC O VER Y DIODE Features UltraFast CoPack IGBT • UltraFast: O ptim ized for high operating V ces = 1200V frequencies up to 40 kH z in hard switching,

lt 332 diode

Abstract: GC 72 smd diode IRG4ZH50KD transistor smd MJ 145 lt 39 diode smd smd-10 weight Diode smd 2f T4 diode smd SMD-10 PACKAGE
Contextual Info: PD - 9.1680 IRG4ZH50KD Surface Mountable Short INSULATED GATE BIPOLAR TRANSISTOR WITH Circuit Rated UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE Features ● High short circuit rating optimized for motor control, tsc = 10µs, n-channel C VCES = 1200V VCC = 720V, TJ = 125°C, VGE = 15V

IR 1838 T

Abstract: IR 1838 T transistor irm 1838 IR 1838
Contextual Info: Preliminary Data Sheet PD -2.492 05/97 International IO R Rectifier H F A 16T B 120 HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • V R = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche

transistor c429

Abstract: diode 47C hfa30pb120
Contextual Info: International lO R Rectifier HEXFRED Preliminary Data Sheet PD-2.604 05/97 HFA30PB120 Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions

IR 1838 T

Abstract: 1838 t
Contextual Info: International TOR Rectifier HEXFRED1 Preliminary Data Sheet PD-2.605 05/97 HFA16TB120S Ultrafast, Soft Recovery Diode Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions

IR 1838 3v

Abstract: IR 1838 HFA16TB120S
Contextual Info: Preliminary Data Sheet PD-2.605 05/97 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI

TL 1838

Abstract: DS9668CN DS9666CN DS2002CJ DS9667 DS2001 DS2002 DS9666 J16A DS2002CN
Contextual Info: DS2001/DS9665/DS2002/DS9666 DS2003/DS9667/DS2004/DS9668 High Current/Voltage Darlington Drivers General Description The DS2001/DS9665/DS2002/DS9666/DS2003/DS9667 DS2004/DS9668 are comprised of seven high voltage, high current NPN Darlington transistor pairs. All units feature

IR 1838 T

Abstract: IGBT W 20 NK 50 Z IRG4PH50UD
Contextual Info: PD 9.1573 IRG4PH50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

IRG4PH50UD

Abstract: IR 1838 T
Contextual Info: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

smd TRANSISTOR code marking 2F

Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838
Contextual Info: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits

IRG4PH50UD

Abstract: IR 1838 T
Contextual Info: PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter