IR 1738 Search Results

IR 1838

Abstract: 1838 MBR5100 1738 IR
Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR5100 Single Anode General Description: 100 V 5 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current

IR 1838

Abstract: 1838 mbr560
Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR560 Single Anode General Description: 60 V 5 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current

IR 1838

Abstract: MBR540 1838 ir
Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR540 Single Anode General Description: 40 V 5 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current

IR 1838

Abstract: SMBR540 IR 1738
Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SMBR540 Single Anode General Description: 40 V 5 A Super Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current

IR 1838

Abstract: 1838 ir 1738 IR 1838 SMBR560
Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SMBR560 Single Anode General Description: 60 V 5 A Super Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

IR 1838

Abstract: SB520
Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB520 Single Anode General Description: 20 V 5 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current

SB540

Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB540 Single Anode General Description: 40 V 5 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current

IR 1838

Abstract: SB560
Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB560 Single Anode General Description: 60 V 5 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current

IR 1838

Abstract: SB5100
Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: SB5100 Single Anode General Description: 100 V 5 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA for wafer form Ir=0.5mA (for dice form) Average Rectified Forward Current

BP206

Abstract: TR6-A "white LED" nvg secure IR 1738 W202 8PL20 " white high power led" 5mm tr6a BP-206
Contextual Info: F [1 A T QJJ ^ i § D IR E C TLY R EP LA C ES STANDARD IN CAN D ESCEN TS • 10 YEARS / 100,000 HOURS • SOLID STATE - HIGH SHOCK & VIBRATION RESISTANCE • BUILT-IN CURRENT LIMITING RESISTOR FOR DIRECT AC & DC VOLTAGES. 2V to 120Vdc / Vac • HIGH INTENSITY ILLUMINATION

Contextual Info: C O IL F O R M S 533-1738 S H IE L D E D .344 8,74 Square Housing ACTUAL SIZE ASSEMBLY r e f e r e n c e INFORMATION "I— .344 (0.74Sq.) * CuP CO*' M A X M IN D IN G LE N G TH O IR E C T L Y FROM BASE FOR 250 V O L T USE. A D O IN S U L A T IO N FOR H IG H E R

4051 bf

Abstract: ic hef 4052 4051B 4052B 4053B 40528 lf 4052 hcf 4053 switching ic l41c 4051 application
Contextual Info: S G S-THOMSON 07C D I 7131337 0014A04 7 I c o s / iw o s r r r r t t H c c w IN T E G R A T E D K C IR C U IT S B S S c * ! S _ _ _ 4-1C 08 817 ANALOG MULTIPLEXERS-DEMULTIPLEXERS: 4051B - SINGLE 8-CHANNEL 4052B - DIFFERENTIAL 4-CHANNEL 4053B - TRIPLE 2-CHANNEL

4052b

Abstract: ic hef 4052 4051B 4053B 4051 bf l41c 4051 bd 40528 40538 hef 4053
Contextual Info: S G S-THOMSON 07C D I 7131337 0014A04 7 I c o s / iw o s r r r r t t H c c w c * ! in t e g r a t e d w S C IR C U IT S m S g S _ _ ANALOG MULTIPLEXERS-DEMULTIPLEXERS: 4051B - SINGLE 8-CHANNEL 4052B - DIFFERENTIAL 4-CHANNEL 4053B - TRIPLE 2-CHANNEL

Contextual Info: « ü à b V h - ï - H ä! V H A 17384DPS/EPS.HA 17385EPS 14# m IB M • U V U f iA ^ îe S M ih ^ ® K « ^ ± ¡ ^ 0 ^ : 1OOnstyp. '•X57^y 'C^f HbJít 170 /i Atyp. • ^ - M O S F E m m iE K (t± l* ® ít± 1Apeak) • E 5 M ^ lá T S D M ÍS ^ ). O V P G lT O S M ië ftj®

TLP903

Abstract: pa980
Contextual Info: TOSHIBA {DI SC RE TE /O PT O! TT 9097250 TOSHIBA DISCRETE/OPTO DE^TO^aSO 99D 17380 0017300 DT-4\-73 TLP903 INFRARED L E D + P H O T O DARLINGTON TRANSISTOR OUTLINE AND DIMENSION •Unit in 25.0 TENTATIVE HIGH SENSITIVE OPTICALLY REFLECTIVE SENSOR • OPTICAL SWITCH

HY 1906

Abstract: 74934 HY 1906 P
Contextual Info: 7 5 . fl ±0.5 f * 3— 37 . 4 C7 6 o Z ÎX E Q ^ ^ 3 -A- p*] ^ ¿ î •£> ^ -7* =3 4 & « æ . u -c « t 'ô '- C - $ & c r. ¿ •? h l± %¿13£ 7 7 3 6 3 3 , 7 7 3 6 4 5 <17 Sä ^ 173852 •<tÔ,. NOTE A M U S T ^ T O o e e KEPT BETWEEN B E MATED

Contextual Info: ~ T "4 -C>\ S E ft R lS Y S S E l'S C F I f^ T E G R A T E D INDUSTRIAL PRODUCTS fL f S Y S T E fvtS FASCO INDS/ SENISYS m 40E D 34=1=1738 00013=10 7 r a S E N T 32 1^*3 THRUSEAfVSS General Purpose L30/P3 Series Features: • ■ ■ ■ ■ ■ Rated Separation: 3 to 24 in.

836 zener

Contextual Info: Zener Regulator Diodes Part Number j • Microsemi Package Division ! Outline Type Micmsemi Mil Data ' Power Spec Sheet ID j W Vz (V) Izt (mA) 3141 3142 7511 7512 8536 8537 9265 9266 10725 10726 13758 17359 17380 3593 3143 3144 3594 20680 7513 7514 8538

2N5301

Abstract: 2N5302 2N5303 RCA-2N5301
Contextual Info: ÏÏÏ 3875081 G E SOLID D!T“|3fl75Dfll 0G173fii t^ | ~ STATE 01E 17384 D J~ - 2 3 - / S ' General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power

TA7317

Abstract: ta7316 ta7313 ta7318 TA7311 TA7314 2N5494 RCA 2N5494 2N5490-2N5497 2N5492
Contextual Info: Ql 3 8 75081 G E SOLID STATE General-Purpose Power Transistors DE~| 3fl7S0fll 0017300 1 01E 17388 D T ' ]? 3 “ // » 2N5490-2N5497 File Number 353 T E R M IN A L D E SIG N A TIO N S Silicon N-P-N

an17380

Abstract: S/an17380
Contextual Info: Application Note 1738 ISL8200AMEV1PHZ Evaluation Board User’s Guide VIN = 3V TO 20V PGOOD VOUT REMOTE SENSING POINTS MODULE GROUP VOUT LOAD UP TO 10A DIMENSIONS: 2.5 X 4.5 INCHES VOUT MONITORING POINTS FIGURE 1. ISL8200AMEV1PHZ EVALUATION BOARD ISL8200AMEV1PHZ Evaluation

ph 4148 zener diode

Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Broken Conductor Detection for Overhead Line Distribution System

Abstract: rel 511 REL511 RTXP 18 cutout pa1400 RL110 RL220 U131 IEC 60255 power supply microscada abb
Contextual Info: REL 511 C*2.0 1 MAK 506 024-BEN Page 1 Issued Apri/1999 Status: New Data subjecllo change withoui nolice SE 95 02 07 Features .Line distance functionality comprises; -simultaneous measurement of the different phase. phase and phase. earth impedances with numerical measuring