IR 145 A Search Results

diode 14512 H

Contextual Info: Li IXYS Mil 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IGBT Modules lC25 = 160 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^CE sat typ. = ^ Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions Maximum Ratings

1N2155

Abstract: 1N2154 1N2156 1N2157 1N2158 1N2159 1N2160
Contextual Info: Bv _ PIV_ SEE C HA RT Io 25 AM P Is, 400 * y f STYLE 145 *C CASE bas e _ AMPS .6 V @ 2 5 AMP SEE C H A R T PIV 2 0 0 JU AMP MAX. BV 145 . C BASE* 145 @ °C BASE* 25 DO 5 STAMP *1 C Y C L E A V E R A G E * FU L L C Y C LE A V E R A G E P/N PIV IR 1N2154

4392

Abstract: 4392 ic equivalent canal TE4392 4392 a ic MARKING 3671 to 2N4393
Contextual Info: A C T IV E COMPONENTS FO R H YB R ID C IR C U IT S COMPOSANTS A C T/FS POUR C IR C U ITS H Y B R ID E S CB-145 TM-3 Silicon NPN transistors, VH F - UHF amplification Transistors NPN silicium, amplification VHF •UHF Type Type Marking Marquage il h21E ^ / v CE

OD-880E

Contextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 .080 • 880nm peak emission • High uniform output .017 • TO-46 Header .178 .195 .100 .041 1.00 MIN .022

Contextual Info: A Dimensions: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance @ 25 MHz 25 MHz Z 145 Ω ±25% Impedance @ 100 MHz 100 MHz Z 230 Ω ±25% Rated Current ΔT = 40K IR 3.0 A max. C Schematic: E General information: Curie Temperature: +140°C

Contextual Info: A Dimensions: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance @ 25 MHz 25 MHz Z 145 Ω ±25% Impedance @ 100 MHz 100 MHz Z 230 Ω ±25% Rated current ΔT = 40K IR 3.0 A max. C Schematic: E General information: Curie Temperature: +140°C

Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Inductance 25 MHz Q-factor 25 MHz 250 DC Resistance IR RDC Self Resonant Frequency SRF Rated Current Value Unit Tol. L 0.33 µH ±10% Q 20 mA max. 0.5 Ω max. 145 MHz

Contextual Info: A Dimensions: [mm] D Electrical Properties: Properties Test conditions Value Unit Tol. Impedance @ 25 MHz 25 MHz Z 145 Ω ±25% Impedance @ 100 MHz 100 MHz Z 230 Ω ±25% Rated Current ΔT = 40K IR 3.0 A max. C Schematic: E General information: Curie Temperature: +140°C

aoz4060sh

Abstract: ODT-880W
Contextual Info: HIGH STABILITY GaAlAs IR EMITTERS .018 DIA. 3 PLCS. ON 100 DIA. PIN CIRCLE .006 MAX GLASS ABOVE CAP TOP EDGE COMMON ANODE FEATURES DETECTOR CATHODE .160 .145 .500 MIN. • Monitoring diode for power output stability • Monolithic construction • Low unit price compared to adding a separate

capax 7-35

Abstract: Felsic capacitors 125 FRS CO 47 capacitor sic-safco felsic co 18 Felsic capacitors FELSIC 018 CO 18 sic-safco capacitor FELSIC 037 CO 37 capacitor sic-safco felsic 039 Sic-Safco promisic
Contextual Info: Modèles de remplacement / Replacement types 4 Anciens modèles / Old ranges Modèles de remplacement /Replacement types ALSIC 105 FRS 1 ALSIC M 105 FRS (1) ALSIC 125 ALSIC FP CELLSIC CI IND 38.1 CMF FP - CMF CMF FRS 12.3 EPSIC R 105 ALSIC IR - ALSIC 145

OD-880E

Contextual Info: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 .080 • 880nm peak emission .017 • High uniform output • TO-46 Header .178 .195 .100 .041 All dimensions are nominal in inches unless otherwise

te 2221

Abstract: 2907 TE2221 marking A2N TE2221A 2221 npn 2222 222-1 a 2907 TE930
Contextual Info: A C T IV E C O M PO N EN TS FOR H Y B R ID C IR C U IT S C O M PO SAN TS A C T IF S P O U R C IR C U IT S H Y B R ID E S CB-145 TM -3 Silicon NPN transistors, switching and general purpose Transistors N P N silicium, usage généra! e t com m utation V CBO

Contextual Info: SKCD 14 C 120 I HD Absolute Maximum Ratings Symbol Conditions Values VRRM Tj = 25 °C, IR = 0.075 mA Tj = 25 °C V 210 A 10 ms sin 180° Tj = 150 °C 170 A i²t Tj = 150 °C, tp = 10 ms, sin 180° 145 A²s 150 °C Electrical Characteristics Symbol IF = 20 A 1

Contextual Info: SKT 13,5 Qu ZG bond. Absolute Maximum Ratings Symbol Conditions Values VRRM Tj = 25 °C, IR = 0.45 mA 1600 V VDRM Tj = 25 °C, ID = 0.45 mA 1600 V IT AV Tc = 80 °C, Tj = 130 °C 145 A ITSM Tj = 130 °C, 10 ms, sin 180° 2300 A i2t Tj = 130 °C, 10 ms, sin 180°

KPY 16

Abstract: 40MM
Contextual Info: 10 IST C IR C U IT ID E N T IF IC A T IO N yyy yyy 2.00 -DIM DIM 4 2.00 4.00 A.20 NA 6 6.20 NA 51110-*60 FOR CENTER 51110-085* 8 6.00 8.20 NA LA TC H OPTION. 51110-105* 10 8.00 10.20 NA 51110-125* 12 10.00 12.20 NA 51110-145* 14 12.00 14.20 8.00 51110-165*

Contextual Info: - 72 - - 74 - 'J - > • /¿PD614 0 ~ 6 145, 6450~6453, 6460 i JFIJ <ir xtff £ ¿PD6452 /¿PD6453 12x24 12X24 128S -7X?3-r- *TS^M:J;0$Enr) r>c;m ( ROM240. rami6 1 2 x 18 12X18 O F -> h -*J- 4 *' 1 K •> h 1, 2 , 3 , 4 H X a#? 1 K -7 h 2 , 4, 6 , 8 H X n W - O ilM O ) ^ 7 —

"12x24"

Abstract: UPD6450 ROM240 ROM-240 PD6452
Contextual Info: - 74 - 'J - > • /¿PD614 0 ~ 6 145, 6450~6453, 6460 i JFIJ <ir xtff £ ¿PD6452 /¿PD6453 12x24 12X24 128S -7X?3-r- *TS^M:J;0$Enr) r>c;m ( ROM240. rami6 1 2 x 18 12X18 O F -> h -*J- 4 *' 1 K •> h 1, 2 , 3 , 4 H X a#? 1 K -7 h 2 , 4, 6 , 8 H X n W - O ilM O ) ^ 7 —

esm diodes

Abstract: esm 200 esm 30 450 v esm 112 390 ESM 650 impulsion P005 esm 112-270 SUPPRESSOR cb T0126
Contextual Info: Type V B R T (V) VRm ax (V) / IR T (m A) min V (BR)SM (V) / x D R T 76 'rsm1 (A) Page 369 T (v j | 2 5 ° C T(vj) 25 OC ESM 112-100 80 90 100 165 23 * £ S M 112-120 95 105 100 200 19 369 ESM 112-150 115 130 100 250 15 369 ESM 112-180 145 160 60 300 13 369

N41 250

Contextual Info: M ade i n E n g la n d . TYPE PENTODE POWER N41 AMPLIFYING VALVE w ith In d ir e c tly H ea ted C a th o d e. F o r o p e r a tio n fr o m A .C . M a in s . M a x im u m D im e n sio n s : Overall length (in c lu d in g p i n s ) 145 m jm . D ia m eter o f bulb

colour television schematics

Abstract: onkyo receiver y2 jvc ir receiver akai SANSUI teletech PHILIPS colour television schematic JVC receiver Salora LF0059 ir learning tv remote control schematics
Contextual Info: Z86L9900100ZC0 Evaluation Board for Z86L99 IR Controllers UM007401-0800 ZiLOG WORLDWIDE HEADQUARTERS ¥ 910 E. HAMILTON AVENUE ¥ CAMPBELL, CA 95008 TELEPHONE: 408.558.8500 ¥ FAX: 408.558.8300 ¥ www.ZiLOG.com This publication is subject to replacement by a later edition. To

145-16NO1

Abstract: ir 145 a 116-16NO1
Contextual Info: VUB 116 / 145 Advanced Technical Information VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 10+11 12 19+20 Type V 1600 1600 1 VUB 116-16 NO1 VUB 145-16 NO1 6+7 4+5 2+3 8+9 VRRM IdAVM IFSM I2t

24c16an

Abstract: goodmans module 80 SERVICE MANUAL samsung television sansui television service mode manual YAMAHA mate 111 SEM 2006 samsung SERVICE MANUAL sansui siemens ntc k25 samsung led tv service manual sony led tv service manual
Contextual Info: ZLP128ICE01ZEM Crimzon In-Circuit Emulator User Manual UM018403-0207 Introduction Thank you for purchasing the ZiLOG Crimzon™ In-Circuit Emulator ICE . The Crimzon ICE provides Crimzon chip family emulation with a trace and event system for program debugging using ZDS II development tools. Once your code is complete, use the included

Contextual Info: s e M IKRO n Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Units Rge = 20 k£2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc Tcase = IfM= - IcM tp = 10

121NQ035

Contextual Info: Other Products From IR Schottky Rectifiers Surface Mount lF AV @ TC VRRM (V) (A) (°C) VFM @ <FM (D (V) 10MQ040 10MQ060 10MQ090 40 60 90 1.1 0 77 0.77 92 110 110 0.51 0.57 0.65 15MQ040 40 1.7 30WQ03F 30WQ04F 30WQ05F 30WQ06F 30WQ09F 30WQ10F 30 40 50 60 90