IR 10D DIODE Search Results

AAY43

Abstract: Q60101-Y43 ring modulator diode germanium aay27
Contextual Info: AAY43 Not for new developm ent Germanium ring modulator diode quartet Diode quartet AAY 43 is suitable for use as a modulator or demodulator in carrier frequency and single-side-band systems. The quartet consists of four single diodes Type AAY 27 cast into a plastic housing. The follow ing data apply to the individual

diode average rectified output current

Abstract: w6 sm diode 2C48A HED 4
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 4 n /n | H I UvU, I / L Z U 4 0 A U10(D,F)2C48A O SW ITC H IN G TYPE PO W ER SU PPLY A PPLICATIO N . O C O N V E R T E R & CH O PPER A PPLICA TIO N . • • • • Repetitive Peak Reverse Voltage Average Output Rectified Current

BTY230

Abstract: BYT230PI
Contextual Info: E i. BYT230PI V -800 BYT231 PI(V)-800 SC S -TH O M S O N M(g^ [lL[i(gTT^(2M S FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 V rms

MTZ 208

Abstract: MTZ 30 diode zener 27c 10D-9 27C zener diode zener 33c IR 10D 8A lz 65 mtz24c MTZ 5.6A
Contextual Info: MTZ Series SILICON EPITAXIAL PLANAR ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range

Contextual Info: LESHAN RADIO COMPANY, LTD. 1.FEATURES RGP10A thru RGP10M Glass Passivated Junction Fast Switching Rectifiers * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High temperature metallurgically bonded construction Reverse Voltage 50 to 1000V

Contextual Info: O rd e rin g n u m b e r: E N 3 8 7 5 SB20-05Z No.3875 I Schottky B arrier Diode SAMYO 50V, 2A Rectifier A p p licatio n s • High frequency rectification switching regulators, converters, choppers . F e a tu re s •Low forward voltage (Vp max = 0.55V).

ZENER CODE 51b

Abstract: 47C 36a 10D-9 27C zener diode Lz 99 diode zener 30c Z 51a zener
Contextual Info: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range

10D-9

Abstract: 6c-5 transistor IR 10D 8A 27C zener diode zener 27c lz 04 lz 65 MTZ20B
Contextual Info: MTZ Series SILICON EPITAXIAL PLANAR ZENER DIODES Constant Voltage Control Applications Features min. 27.5 • Glass sealed envelope. MSD • High reliability. max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.45 Glass case JEDEC DO-34

ZJ33B

Abstract: 27C zener diode zener 30c Z 51a zener
Contextual Info: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range

74ALS29842

Abstract: SN74ALS29841
Contextual Info: {L O G IC } DbE D • INSTR fiTt.1753 DD771S3 5 I S N 74 A LS 2 9 8 4 1, SN74ALS29842 10-BIT BUS INTER FA C E D T Y P E LA TC H ES WITH 3-STATE OUTPU TS ^ TEXAS | {L O G IC } ObE D 3-State Buffer-Type Outputs Drive Bus-Lines Directly • Bus-Structured Pinout

Contextual Info: DISCRETE SEMICONDUCTORS EMM BAS55 High-speed diode 1996 Apr 23 Product specification Supersedes data of November 1993 File under Discrete Semiconductors, SC01 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Product specification High-speed diode

OP24

Abstract: OP240 OP240A OP550 OP560 QP240A
Contextual Info: 0 . OPTEK Product Bulletin OP240A June 1996 GaAIAs Plastic Infrared Emitting Diodes Types QP240A, OP24QB, OP24ÛC, OP24QD Features • • • • • W id e irra d ia n ce p attern M e c h a n ic a lly and s p e c tra lly m a tch e d to th e O P 5 5 0 and O P 5 6 0 s e rie s

Contextual Info: A p o llo SE3455/5455 GaAs Infrared Emitting Diode FEATURES » T 0-4-6 metal u n pactage ' C hoice ol Rat window or lensed package » 90r or 30° nominai beam an^e cption ' 935 nm waveienglh » Wide oper-jling temperature range (- 55' C lo +125' Cj • Ideal lor high pulsed currant applicalions

H11F11

Abstract: H11FS vy 5 fet
Contextual Info: EU PHOTO FET OPTOCOüPtERS m m tm a m cs H11F1 H11F2H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon pbotodetector. The detector is electrically isolated from the input and performs like an idea? isolated FET

TLZ10D

Abstract: 4C3 zener diode 9c1 zener diode 5a6 zener diode zener 4b7 zener 6c2 diode zener 33c zener 5B1 TLZ10 TLZ10A
Contextual Info: TLZ. VISHAY Vishay Semiconductors Silicon Epitaxial Planar Zener - Diodes Features • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise High reliability 17205 Applications Voltage stabilization Mechanical Data

Contextual Info: GMZJ2.0~GMZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.040 1.0 • Lead free in comply with EU RoHS 2002/95/EC directives 0.048(1.2)DIA. 0.043(1.1) • Ideally Suited for Automated Assembly Processes

zener diode 2v4

Abstract: zener diode 6c2 diode glass 5b6
Contextual Info: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise High reliability AEC-Q101 qualified Compliant to RoHS directive 2002/95/EC

4C3 zener diode

Abstract: NATIONAL SEMICONDUCTOR MARKING CODE 277 9c1 zener diode zener 6c2 marking code ZENER 5B1 zener diode 5c1 zener diode marking code 6C8 zener 5c1 TLZ10D
Contextual Info: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level e2 Very high stability Low noise High reliability Lead Pb -free component Component in accordance to RoHS 2002/95/EC

4C3 zener diode

Abstract: 5c1 zener diode MArking 3A0 9c1 zener diode 6b2 zener TLZ8V2C Zener Diode 4C3 TLZ10 TLZ10A TLZ10C
Contextual Info: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level e2 Very high stability Low noise High reliability Lead Pb -free component Component in accordance to RoHS 2002/95/EC

Zener Diode 4C3

Contextual Info: TLZ-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • High reliability • AEC-Q101 qualified • Material categorization: for definitions of compliance

ac servo amplifier schematic

Abstract: GE INSULGREASE transformer less power supply 6v output SI-1050GS SI-1050G power amplifier output power 50w G-640 "power amplifier" circuits with output capacitor power amplifier for motors insulgrease
Contextual Info: HYBRID POWER OPERATIONAL A M P L IF IE R S I-1 0 5 0 G S SPECIFICATIO NS P o w e r : M aximum AC pow er ra tin g is 50W at 1000Hz w ith O s c illa tio n : Depending on loads, a load of 8 ohms and th e recom m ended heat sink and m ounting. If o scilla tio n is present,

transistor BF 258

Contextual Info: Standard ICs High voltage, high current Darlington transistor array B A 1 2 0 0 1 B /B A 1 2 0 0 2 /B A 1 2 0 0 3 B /B A 1 2 0 0 3 B F / B A 1 2 0 0 4 B The BA12001B, BA12002, BA12003B, BA12003BF, and BA12004B are high current transistor arrays featuring high

4C3 zener diode

Abstract: minimelf 15A diode glass 5b6 zener diode 6c2 zener 4c3 8c2 zener diode 5c1 zener diode 5c1 glass body zener diode 9c1 zener diode 2A7 zener diode
Contextual Info: TLZ-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • High reliability • AEC-Q101 qualified • Material categorization: For definitions of compliance

4C3 zener diode

Abstract: diode zener 3A0 zener 4b7 9c1 zener diode 5c1 zener diode 5B1 zener diode Zener Diode 4C3 diode zener 33c zener 6c2 2A7 zener diode
Contextual Info: TLZ-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • High reliability • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in