IR 10D DIODE Search Results

ML-370

Abstract: DM-305A 4410M rms225 BECKMAN 3020b digital capacitance meter
Contextual Info: Test Equipment COMPLETE LINE Analog Multimeter AM-10 • Pocket Size - Very Economical • 6 Functions, 10 Ranges • ±4% Basic DC Accuracy • 2” Mirrored Scale • 2KΩ/V AC & DC Input Sensitivity • Fuse and Diode Protection • DC Current • Resistance

AAY43

Abstract: Q60101-Y43 ring modulator diode germanium aay27
Contextual Info: AAY43 Not for new developm ent Germanium ring modulator diode quartet Diode quartet AAY 43 is suitable for use as a modulator or demodulator in carrier frequency and single-side-band systems. The quartet consists of four single diodes Type AAY 27 cast into a plastic housing. The follow ing data apply to the individual

diode byt 45

Abstract: 12P-1000
Contextual Info: r z 7 ^ 7# S C S -T H O M S O N « ^ l y E C T ^ M O S _ B Y T 1 2 P - 1 0 0 0 FAST RECOVERY RECTIFIER DIODE • VERY HIGH REVERSE VOLTAGE CAPA­ BILITY ■ VERY LOW REVERSE RECOVERY TIME ■ VERY LOW SWITHING LOSSES ■ LOW NOISE TURN-OFF SWITCHING

Contextual Info: 1N6638US, 1N6642US, 1N6643US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/578 1N6638U,1 N6642U, 1N6643U AVAILABLE IN JAN, JANTX, JANTXV AND JANS 1N6638U & US 1N6642U & US 1N6643U & US PER MIL-PRF-19500/578 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE

diode average rectified output current

Abstract: w6 sm diode 2C48A HED 4
Contextual Info: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 4 n /n | H I UvU, I / L Z U 4 0 A U10(D,F)2C48A O SW ITC H IN G TYPE PO W ER SU PPLY A PPLICATIO N . O C O N V E R T E R & CH O PPER A PPLICA TIO N . • • • • Repetitive Peak Reverse Voltage Average Output Rectified Current

BTY230

Abstract: BYT230PI
Contextual Info: E i. BYT230PI V -800 BYT231 PI(V)-800 SC S -TH O M S O N M(g^ [lL[i(gTT^(2M S FAST RECOVERY RECTIFIER DIODES FEATURES • ■ ■ ■ VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING INSULATED PACKAGE : Insulating voltage = 2500 V rms

Contextual Info: A Product Line of Diodes Incorporated ZXRE1004 SOT23 MICROPOWER 4µA 1.22V VOLTAGE REFERENCE Description Pin Assignments The ZXRE1004 is a 1.22 volt bandgap reference circuit designed for ultra low current operation, typically 4 A. The device is available in a SOT23 surface mount package

egp 100

Abstract: A-405 EGP10A EGP10M
Contextual Info: LESHAN RADIO COMPANY, LTD. EGP10A thru EGP10M FEATURES Glass Passivated Junction Fast Switching Rectifiers * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High temperature metallurgically Reverse Voltage 50 to 1000V Forward Current 1.0A

A-405

Abstract: UGP10A UGP10K
Contextual Info: LESHAN RADIO COMPANY, LTD. UGP10A thru UGP10K FEATURES Glass Passivated Junction Uitra Fast Rectifiers * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Reverse Voltage 50 to 800V Forward Current 1.0A * High temperature metallurgically

ZJ33B

Abstract: 27C zener diode zener 30c Z 51a zener
Contextual Info: ZJ Series SILICON EPITAXIAL PLANER ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range

GBU10A

Abstract: IR 10D DIODE
Contextual Info: SIYU R GBU10A . GBU10M Single-phase Silicon Bridge Rectifier 塑封硅整流桥堆 反向电压 50-1000V 正向电流 10 A Reverse Voltage 50 to 1000V Forward Current 10 A 特征 Features GBU Low reverse leakage •反向漏电流低 High forward surge capability

74ALS29842

Abstract: SN74ALS29841
Contextual Info: {L O G IC } DbE D • INSTR fiTt.1753 DD771S3 5 I S N 74 A LS 2 9 8 4 1, SN74ALS29842 10-BIT BUS INTER FA C E D T Y P E LA TC H ES WITH 3-STATE OUTPU TS ^ TEXAS | {L O G IC } ObE D 3-State Buffer-Type Outputs Drive Bus-Lines Directly • Bus-Structured Pinout

51a zener

Abstract: MTZJ 5.6A MTZJ SERIES ZENER DIODES zener diodes 5.1a zener 56c 27C zener J15-C 24260 J27B zener 10D
Contextual Info: MTZJ Series ZENER DIODES Constant Voltage Control Applications Features min. 27.5 • Glass sealed envelope. MSD • High reliability. max. 2.9 White Cathode Band Part No. Black Color 1.9 min. 27.5 max. max. 0.45 Glass case JEDEC DO-34 Dimensions in mm Absolute Maximum Ratings (Ta = 25OC)

10D-9

Abstract: 27C zener 39D zener diode diode zener 33c J15-C MTZJ18C zener 56c
Contextual Info: MTZ J Series ZENER DIODES Constant Voltage Control Applications Features • Glass sealed envelope. MSD • High reliability. Absolute Maximum Ratings (Ta = 25oC) Symbol Value Unit Ptot 500 mW Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175

Contextual Info: A p o llo SE3455/5455 GaAs Infrared Emitting Diode FEATURES » T 0-4-6 metal u n pactage ' C hoice ol Rat window or lensed package » 90r or 30° nominai beam an^e cption ' 935 nm waveienglh » Wide oper-jling temperature range (- 55' C lo +125' Cj • Ideal lor high pulsed currant applicalions

H11F11

Abstract: H11FS vy 5 fet
Contextual Info: EU PHOTO FET OPTOCOüPtERS m m tm a m cs H11F1 H11F2H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon pbotodetector. The detector is electrically isolated from the input and performs like an idea? isolated FET

MARKING 358 945A

Abstract: colour code diode zener MARKING 945A zener color codes Zener diode wz 140 colour code zener Zener diode wz 130 MARKING 2S SMA 927a A 928A
Contextual Info: TAIWAN SEMICONDUCTOR % 1S M A 5926 - 1S M A 5956 1.5 Watts Surface Mount Silicon Zener Diode SM A/DO-21 AAC tò RoHS C O M P L IA N C E F e a tu re s III*[f KM IK^-' l!Ki F o r su rfa ce m o u n te d a p p lic a tio n s in o rd e r to o p tim iz e b o a rd space

1N4933

Abstract: 1N4937 MOTOROLA IR 10D DIODE
Contextual Info: MOTOROLA FAST RE COVERY RECTIFIERS A X IA L - L E A D , F AST-R ECO VERY REC TIFIE RS 5 0 -6 0 0 V O LT S 1 AM PERE . . . designed for special applications such as dc power supplies, inverters, converters, ultrasonic systems, choppers, low R F interfer­ ence and free wheeling diodes. A complete line of fast recovery

4C3 zener diode

Abstract: 5a6 zener diode 9c1 zener diode
Contextual Info: TLZ-Series VISHAY Vishay Semiconductors Small Signal Zener Diodes Features • • • • • Very sharp reverse characteristic Low reverse current level Very high stability Low noise High reliability 17205 Applications Voltage stabilization Mechanical Data

39A zener diode

Abstract: 104K200 diode zener 22A
Contextual Info: GMZJ2.0~GMZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.040 1.0 • Lead free in comply with EU RoHS 2002/95/EC directives 0.048(1.2)DIA. 0.043(1.1) • Ideally Suited for Automated Assembly Processes

LZ2314J

Abstract: 6-N-050
Contextual Info: LZ2314J LZ2314J 1/3 type B/W CCD Area Sensor for EIA U2314J is a 1/3-type 6.0 mm solid-state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices). Having approximately 270000 pixels (horizontal 542 X vertical 492), the sensor provides a high resolution stable B/W image,

LZ2313H5

Contextual Info: LZ2313H5 LZ2313H5 I/3 DESCRIPTION LZ2313H5 is a 1/3-type 6.0 mm solid-state im age sensor that consists of PN phote-diodes and CCDS (charge-coupled devices). Having approximately 270000 pixels (horizontal 542 X vertical 42), the sensor provides a high resolution stable

4C3 zener diode

Abstract: 5c1 zener diode MArking 3A0 9c1 zener diode 6b2 zener TLZ8V2C Zener Diode 4C3 TLZ10 TLZ10A TLZ10C
Contextual Info: TLZ-Series Vishay Semiconductors Small Signal Zener Diodes Features • • • • • • • Very sharp reverse characteristic Low reverse current level e2 Very high stability Low noise High reliability Lead Pb -free component Component in accordance to RoHS 2002/95/EC

THDT58D

Abstract: breakover device diode sg 38 diode MARKING CODE sg thDT
Contextual Info: Si 30 E » H 7 ^ 2 3 7 0G 32 G 24 S• SGS-THOMSON ¡ÛLUgim«! SG S -T H O M S O N THDT 58 D TRISIL DESC RIPTIO N This protection device has been especially designed for subscriber line-card and terminal protection. By itself, It enables to protect integrated SLIC against