IPS09N03LA Search Results
IPS09N03LA Datasheets (2)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPS09N03LA |
|
OptiMOS 2 Power-Transistor | Original | 440.84KB | 11 | ||
| IPS09N03LA G |
|
N-Channel MOSFETs (20V - 250V); Package: PG-TO251-3; Package: IPAK SL (TO-251 SL); VDS (max): 25.0 V; RDS (on) (max) (@10V): 8.8 mOhm; RDS (on) (max) (@4.5V): 15.0 mOhm; ID (max): 50.0 A; | Original | 540.14KB | 12 |
IPS09N03LA Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPS09N03LAGPower Field-Effect Transistor, 50A I(D), 25V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPS09N03LAG | 7,168 |
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