IPP31 Search Results

M28F512

Abstract: PDIP32 PLCC32 m28f512-25
Contextual Info: /= T S G S -T H O M S O N ^ 7 # !M g ^ (Q iti(M (Q M (g § M28F512 CMOS 512K (64K x 8) FLASH MEMORY • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10ns

RBO08-40G

Contextual Info: RBO08-40G/T Application Specific Discretes A.S.D. REVERSED BATTERY AND OVERVOLTAGE PROTECTION FEATURES • ■ ■ ■ ■ ■ ■ 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD

Contextual Info: RBO08-40T  REVERSED BATTERY AND OVERVOLTAGE PROTECTION Application Specific Discretes A.S.D.TM FEATURES 2 DISSIPATION THROUGH PIN 2 : TAB CONNECTED TO GROUND MONOLITHIC SILICON CHIP NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING COMPONENT T1 BREAKDOWN VOLTAGE : 24 V min

RBO08-40G

Abstract: RBO08-40T RBO08-40M VF13 aluminium plane heatsink
Contextual Info: RBO08-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.

Schaffner load dump generator

Abstract: load dump test
Contextual Info: RBO40-40T  Application Specific Discretes A.S.D.TM REVERSED-BATTERY AND OVERVOLTAGE PROTECTION FEATURES PROTECTIONAGAINST ”LOAD DUMP” EFFECT DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY NEGATIVE OVERVOLTAGE PROTECTION BY

Contextual Info: RBO40-40G/T Application Specific Discretes A.S.D. REVERSED BATTERY AND OVERVOLTAGE PROTECTION FEATURES • ■ ■ ■ ■ ■ PROTECTION AGAINST “LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY

Schaffner NSG

Abstract: diode ir31 Schaffner load dump generator schaffner nsg 500 b diode ifm 40 A transil 30 V marking code M31 RBO40-40T TRANSIL RBO40 RBO40-40G
Contextual Info: RBO40-40G/T Application Specific Discretes A.S.D. REVERSED BATTERY AND OVERVOLTAGE PROTECTION FEATURES • ■ ■ ■ ■ ■ PROTECTION AGAINST “LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY

schaffner heatsink

Contextual Info: RBO40-40M  REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT RBO FEATURES PROTECTION AGAINST ”LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.

schaffner ri 229 pc

Abstract: Schaffner it 245 Schaffner NSG 510 RBO40-40G RBO40-40M RBO40-40T VF13 load dump pulse Schaffner load dump generator diode ir31
Contextual Info: RBO40-40G/M/T  REVERSED BATTERY AND Application Specific Discretes A.S.D.TM OVERVOLTAGE PROTECTION CIRCUIT RBO FEATURES PROTECTION AGAINST "LOAD DUMP" PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.

Schaffner NSG

Abstract: Schaffner NSG 510 diode ir31 Schaffner load dump generator TRANSIL IR32 schaffner nsg 500 b Schaffner NSG 500 c RBO40-40T VF13
Contextual Info: RBO40-40G/T Application Specific Discretes A.S.D. REVERSED BATTERY AND OVERVOLTAGE PROTECTION FEATURES • ■ ■ ■ ■ ■ PROTECTION AGAINST “LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY

RBO08-40G

Abstract: RBO08-40T diode ir31 diode T2 TRANSIL RBO08-40M VF13 IR 30 D1 Diode
Contextual Info: RBO08-40G/T Application Specific Discretes A.S.D. REVERSED BATTERY AND OVERVOLTAGE PROTECTION FEATURES • ■ ■ ■ ■ ■ ■ 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD

Contextual Info: / = 7 ^7 # S G S - T H O M S O N M28F256A R { flD g [S ® i[L i(Ä ® R D D i CMOS 256K (32K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 120ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

schaffner ri 229 pc

Abstract: SCHAFFNER NSG load dump pulse IR31 RBO40-40G RBO40-40M RBO40-40T VF13 marking code, t2
Contextual Info: RBO40-40G/M/T  REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT RBO FEATURES PROTECTION AGAINST ”LOAD DUMP” PULSE 40A DIODE TO GUARD AGAINST BATTERY REVERSAL MONOLITHIC STRUCTURE FOR GREATER RELIABILITY BREAKDOWN VOLTAGE : 24 V min.

diode ir31

Abstract: TRANSIL RBO08-40G transil diode equivalent transistor marking code SGs IR31 RBO08-40M RBO08-40T VF13
Contextual Info: RBO08-40G/M/T  REVERSEDBATTERYAND Application Specific Discretes A.S.D.TM OVERVOLTAGEPROTECTIONCIRCUIT RBO FEATURES 8A DIODE TO GUARD AGAINST BATTERY REVERSAL. NEGATIVE OVERVOLTAGE PROTECTION BY CLAMPING. COMPLIANT WITH ISO/DTR 7637 STANDARD FOR PULSES 1, 2, 3a and 3b.