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    IPP114N12N3 G Search Results

    IPP114N12N3 G Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPP114N12N3 G
    		Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 120.0 V; RDS (on) (max) (@10V): 11.4 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 75.0 A; Original PDF 273.81KB 9
    IPP114N12N3GXKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 120V 75A TO220-3 Original PDF 303.54KB
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    IPP114N12N3 G Price and Stock

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    Infineon Technologies AG IPP114N12N3GXKSA1

    MOSFET N-CH 120V 75A TO220-3
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    DigiKey IPP114N12N3GXKSA1 Tube 334 1
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    Avnet Americas IPP114N12N3GXKSA1 Tube 16 Weeks 500
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    Verical () IPP114N12N3GXKSA1 500 10
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    IPP114N12N3GXKSA1 400 273
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    Newark IPP114N12N3GXKSA1 Bulk 384 1
    • 1 $2.96
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    Rochester Electronics IPP114N12N3GXKSA1 797 1
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    TME IPP114N12N3GXKSA1 55 1
    • 1 $2.60
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    IBS Electronics IPP114N12N3GXKSA1 500
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    Infineon Technologies AG IPP114N12N3 G

    MOSFETs N-Ch 120V 75A TO220-3 OptiMOS 3
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    Mouser Electronics IPP114N12N3 G 419
    • 1 $2.66
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    Onlinecomponents.com IPP114N12N3 G 254
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    AVED Memory Products IPP114N12N3 G

    IPP114N12N3 G by INFINEON TECH ICS is a power MOSFET featuring low on-resistance, high-speed switching, and a maximum drain-source voltage of 120V, ideal for efficient power management applications.
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    IBS Electronics IPP114N12N3 G 254 150
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    IPP114N12N3 G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IPP114N12N3 G OptiMOSTM3 Power-Transistor Features Product Summary • N-channel, normal level VDS 120 V RDS on max 11.4 mΩ • Excellent gate charge x R DS(on) product (FOM) 75 ID • Very low on-resistance R DS(on) A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free


    Original     		IPP114N12N3 PG-TO220-3 114N12N PDF