IPI80N04S3-04 Search Results
IPI80N04S3-04 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPI80N04S3-04 |
|
Single: N-Channel 40V MOSFETs; Package: PG-TO262-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 4.1 mOhm; ID (max): 80.0 A; RthJC (max): 1.1 K/W; | Original | 188.61KB | 9 | ||
| IPI80N04S304AKSA1 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 40V 80A TO262-3 | Original | 191KB |
IPI80N04S3-04 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPI80N04S3-04Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI80N04S3-04 | 370 | 1 |
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