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    IPI600N25N3 G Search Results

    IPI600N25N3 G Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPI600N25N3 G
    Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 250.0 V; RDS (on) (max) (@10V): 60.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 25.0 A; Original PDF 427.51KB 11
    IPI600N25N3GAKSA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 250V 25A TO262-3 Original PDF 633.77KB
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    IPI600N25N3 G Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPI600N25N3GAKSA1

    MOSFET N-CH 250V 25A TO262-3
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    DigiKey IPI600N25N3GAKSA1 Tube 500
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    Avnet Americas IPI600N25N3GAKSA1 Tube 500
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    Rochester Electronics IPI600N25N3GAKSA1 200 1
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    EBV Elektronik IPI600N25N3GAKSA1 53 Weeks 50
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    Vyrian IPI600N25N3GAKSA1 2,575
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    Infineon Technologies AG IPI600N25N3G

    OPTIMOS 3 POWER-TRANSISTOR Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
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    ComSIT USA IPI600N25N3G 2,969
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