IPI041N12N3 G Search Results
IPI041N12N3 G Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPI041N12N3 G |
|
N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 120.0 V; RDS (on) (max) (@10V): 4.1 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 120.0 A; | Original | 510.49KB | 11 | ||
| IPI041N12N3GAKSA1 |
|
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 120V 120A TO262-3 | Original | 857.79KB |
IPI041N12N3 G Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPI041N12N3GAKSA1MOSFET N-CH 120V 120A TO262-3 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IPI041N12N3GAKSA1 | Tube | 1 |
|
Buy Now | ||||||
|
IPI041N12N3GAKSA1 | Tube | 16 Weeks | 500 |
|
Buy Now | |||||
|
IPI041N12N3GAKSA1 |
|
Get Quote | ||||||||
|
IPI041N12N3GAKSA1 | 1 |
|
Buy Now | |||||||
|
IPI041N12N3GAKSA1 | 1 |
|
Get Quote | |||||||
|
IPI041N12N3GAKSA1 | 500 |
|
Buy Now | |||||||
Infineon Technologies AG IPI041N12N3 GMOSFETs N-Ch 120V 120A I2PAK-3 OptiMOS 3 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IPI041N12N3 G | 32 |
|
Buy Now | |||||||
IPI041N12N3 G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on) |
Original |
IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 |