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    IPI041N12N3 G Search Results

    IPI041N12N3 G Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPI041N12N3 G
    		Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO262-3; Package: I2PAK (TO-262); VDS (max): 120.0 V; RDS (on) (max) (@10V): 4.1 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 120.0 A; Original PDF 510.49KB 11
    IPI041N12N3GAKSA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 120V 120A TO262-3 Original PDF 857.79KB
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    IPI041N12N3 G Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPI041N12N3GAKSA1

    MOSFET N-CH 120V 120A TO262-3
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    DigiKey IPI041N12N3GAKSA1 Tube 458 1
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    Avnet Americas IPI041N12N3GAKSA1 Tube 16 Weeks 500
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    Mouser Electronics IPI041N12N3GAKSA1
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    Rochester Electronics IPI041N12N3GAKSA1 1
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    TME IPI041N12N3GAKSA1 1
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    IBS Electronics IPI041N12N3GAKSA1 500
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    Infineon Technologies AG IPI041N12N3 G

    MOSFETs N-Ch 120V 120A I2PAK-3 OptiMOS 3
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    Mouser Electronics IPI041N12N3 G 32
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    IPI041N12N3 G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on)


    Original     		IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 PDF

    Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 120 V RDS(on),max (TO-263) 3.8 mW ID 120 A • Very low on-resistance R DS(on)


    Original     		IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 PDF

    041N12N

    Abstract: 038N12N DD601 JESD22 PG-TO220-3 IPI041N12N3 G
    Contextual Info: IPI041N12N3 G IPP041N12N3 G OptiMOSTM3 Power-Transistor IPB038N12N3 G Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on),max (TO-263) 3.8 mΩ ID 120 A • Very low on-resistance R DS(on)


    Original     		IPI041N12N3 IPP041N12N3 IPB038N12N3 O-263) PG-TO263-3 PG-TO262-3 PG-TO220-3 041N12N 038N12N DD601 JESD22 PG-TO220-3 IPI041N12N3 G PDF

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Contextual Info: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J PDF

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Contextual Info: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF