IPD50R1K4CE, Search Results
IPD50R1K4CE, Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IPD50R1K4CE |
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FETs - Single, Discrete Semiconductor Products, MOSF N CH 500V 3.1A PG-TO-252 | Original | 15 | |||
IPD50R1K4CEAUMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 3.1A PG-TO-252 | Original | 1.55MB | |||
IPD50R1K4CEBTMA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 3.1A PG-TO-252 | Original | 1.55MB |
IPD50R1K4CE, Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPD50R1K4CEAUMA1MOSFET N-CH 500V 3.1A TO252-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD50R1K4CEAUMA1 | Cut Tape | 950 | 1 |
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IPD50R1K4CEAUMA1 | 5,000 | 1,516 |
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IPD50R1K4CEAUMA1 | 7,500 | 1 |
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IPD50R1K4CEAUMA1 | Reel | 10,000 | 2,500 |
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Infineon Technologies AG IPD50R1K4CEBTMA1MOSFET N-CH 500V 3.1A TO252-3 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD50R1K4CEBTMA1 | Reel |
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IPD50R1K4CEBTMA1 | 2,500 |
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IPD50R1K4CEBTMA1 | 2,000 |
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IPD50R1K4CEBTMA1 | 574 | 1 |
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IPD50R1K4CEBTMA1 | 2,139 |
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Infineon Technologies AG IPD50R1K4CEAUMA1 (COOLMOS CE)Mosfet, N-Ch, 500V, 4.8A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:500V; On Resistance Rds(On):1.26Ohm; Rds(On) Test Voltage Vgs:13V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes |Infineon IPD50R1K4CEAUMA1 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD50R1K4CEAUMA1 (COOLMOS CE) | Cut Tape | 1 |
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Infineon Technologies AG IPD50R1K4CEPOWER FIELD-EFFECT TRANSISTOR, 4.8A I(D), 500V, 1.4OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD50R1K4CE | 594 |
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