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    IPD082N10N3 G Search Results

    IPD082N10N3 G Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPD082N10N3 G
    		Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.2 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A; Original PDF 518.29KB 12
    IPD082N10N3GATMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 80A TO252-3 Original PDF 761.9KB
    IPD082N10N3GBTMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 80A TO252-3 Original PDF 757.05KB
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    IPD082N10N3 G Price and Stock

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    Infineon Technologies AG IPD082N10N3GATMA1

    MOSFET N-CH 100V 80A TO252-3
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    DigiKey () IPD082N10N3GATMA1 Digi-Reel 18,762 1
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    UMW IPD082N10N3G

    MOSFET N-CH 100V 80A DPAK
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    DigiKey () IPD082N10N3G Digi-Reel 2,300 1
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    IPD082N10N3G Tape & Reel 2,500
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    Infineon Technologies AG IPD082N10N3GBTMA1

    MOSFET N-CH 100V 80A TO252-3
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    DigiKey IPD082N10N3GBTMA1 Tape & Reel
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    Infineon Technologies AG IPD082N10N3G

    N-channel, normal level
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    Win Source Electronics IPD082N10N3G 47,374
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