IPC 610 CLASS 3 Search Results

Contextual Info: REVISION A - DONOT SCALE FROM THIS PRINT NOTES: !_ cxx-xx-xx REPRESENTSACRITICALDIMENSION. 2. ALL DIMENSIONS TO BE SYMMETRICAL ABOUT CENTERLINE WITHIN ±.002[.05] UNLESS OTHERWISE NOTED. 3. PARTSARETO BE 100% ELECTRICALLYTESTED FOR CONTINUITY, OPENS/SHORTS.

Contextual Info: REVISION B NOTES: 1. REPRESENTS A CRITICAL DIMENSION. 2. ALL DIMENSIONS TO BE SYMMETRICAL ABOUT CENTERLINE. WITHIN ±.002[.05] UNLESS OTHERWISE NOTED. 3. PARTSARETO BE 100% ELECTRICALLYTESTED FOR CONTINUITY, OPENS/SHORTS. 4. GERBER DATABASE TO TAKE PRECEDENCE OVER THIS DRAWING.

Contextual Info: REVISION A DO NOT SCALE FROM THIS PRINT NOTES: 1. REPRESENTS A CRITICAL DIMENSION. 2. ALL DIMENSIONS TO BE SYMMETRICAL ABOUT CENTERLINE WITHIN ±.002[.05] UNLESS OTHERWISE NOTED. 3. PARTS ARETO BE 100% ELECTRICALLY TESTED FOR CONTINUITY, OPENS/SHORTS. 4. GERBER DATABASE TO TAKE PRECEDENCE OVER THIS DRAWING.

Contextual Info: REVISION B DO NOT SCALE FROM THIS PRINT NOTES: 1. REPRESENTS A CRITICAL DIMENSION. 2. ALL DIMENSIONS TO BE SYMMETRICAL ABOUT CENTERLINE WITHIN ±.002[.05] UNLESS OTHERWISE NOTED. 3. PARTS ARE TO BE 100% ELECTRICALLY TESTED FOR CONTINUITY, OPENS/SHORTS.

Contextual Info: REVISION C DO NOT SCALE FROM THIS PRINT NOTES: 1. REPRESENTS A CRITICAL DIMENSION. 2. ALL DIMENSIONS TO BE SYMMETRICAL ABOUT CENTERLINE WITHIN ±.002[.05] UNLESS OTHERWISE NOTED. 3. PARTS ARE TO BE 100% ELECTRICALLY TESTED FOR CONTINUITY, OPENS/SHORTS.

Contextual Info: 12 13 10 D e ta in S c a le 4:1 0.97 .038 T ‘’^ A D e t a i i l MATERIAL NUMBER NUMBER OF PORTS 85572-XXXX 12/12 PORT A T ir Y PORT C T im PORT E n r Y PORT G ir w PORT I PORT K 1.00 12,70 .500 _ D etail2 171.15/6.738 165.10/6500 2.7/0.106 NOTES: 1- SHIELD: MATERIAL: BRASS, PLATING: NICKEL

Contextual Info: REVISION B DO NOT SCALE FROM THIS PRINT NOTES: 1. REPRESENTS A CRITICAL DIMENSION. 2. ALL DIMENSIONS TO BE SYMMETRICAL ABOUT CENTERLINE WITHIN ±.002[.05] UNLESS OTHERWISE NOTED. 3. PARTS ARETO BE 100% ELECTRICALLY TESTED FOR CONTINUITY, OPENS/SHORTS. 4. GERBER DATABASE TO TAKE PRECEDENCE OVER THIS DRAWING.

MRF6S19060N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 5, 12/2010 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930

PICMG 2.0 R3.0

Contextual Info: 6U CompactPCI Intel® Core i7 Universal Blade with two PMC sites cPCI-6510 Series Features 32nm Intel® Core™ i7 SV, LV, ULV processors with ECC Up to 8GB DDR3-1066 ECC soldered memory Two 64-bit/133MHz PMC sites with rear I/O One PCI-Express x8 XMC site

MRF6S19060N

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1 MRF6S19060NR1 AD250
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

160-1183-1-ND

Abstract: SLUU200 vishay CRCW0603 Liteon 160-1183-1-ND BQ24100RHL ECJ1VB1C104K ECJ-1VB1C104K 15-V bq24103 bq24105
Contextual Info: User’s Guide Using the bq241xx bqSWITCHERE User’s Guide EVM IMPORTANT NOTICE Texas Instruments (TI) provides the enclosed product(s) under the following conditions: This evaluation kit being sold by TI is intended for use for ENGINEERING DEVELOPMENT OR EVALUATION

Contextual Info: • Simultaneously terminates flat conductor flat cable or flexible circuitry without cable stripping. • Mates with pins 5 mm 0.197 inch long. • Reliable dual-beam design features pre-stressed contact beam for low insertion force. • Duplex plated.

tantalum nitride

Abstract: MICROWAVE TECHNOLOGY CROSS REFERENCE ipc610 DSASW00372
Contextual Info: Advanced Thin Film Technologies Spectrum Microwave’s reputation among both the military and commercial markets is second to none. Since 1981, Spectrum Microwave’s Marlborough Operations has been building upon this reputation in the industry with exceptional service

Contextual Info: TURNKEY PRINTED CIRCUIT BOARD AND FLEX ASSEMBLIES C O M P L E T E V E R T I C A L I N T E G R AT I O N — F R O M C O N N E C T O R S T O B O A R D S T O A S S E M B LY DECEMBER 2014 TURNKEY PCB/Flex Circuit Assemblies Full-service—from concept and design through fabrication,

MRF6S19060N

Contextual Info: Document Number: MRF6S19060N Rev. 5, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs LIFETIME BUY Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

MRF6S21060N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

MRF6S21060N

Abstract: CRCW12061001FKEA j8084 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A113 JESD22-A114 MRF6S21060NBR1 MRF6S21060NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 5, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

MRF6S19060N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 2, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19060NR1 MRF6S19060NBR1 Designed for N- CDMA base station applications with frequencies from 1930

J535 equivalent

Abstract: ad250 ipc 610 Class 3 pin protrusion MRF6S21060N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 2, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21060NR1 MRF6S21060NBR1 Designed for W- CDMA base station applications with frequencies from 2110

MIL-I-46058

Abstract: Uralane 5750 arathane 5750 CE-1155 J-STD-001 MIL-I-46058 AR reaction wheel 46058 MIL-I-46058 Type AR ersa
Contextual Info: Aeroflex Colorado Springs - CCA Product Line Aeroflex Colorado Springs CCA Services and Products Overview August 2008 Customer-Teaming Continuous Improvement Customer Satisfaction Aeroflex Colorado Springs A leader in … T Space assembly NASA 8739 and ANSI/J-STD-001

Contextual Info: TLME / F / K2300 Vishay Semiconductors MiniLED Ultrabright Description The new MiniLED Series have been designed in a small white SMT package. The feature of the device is the very small package 2.3 mm x 1.3 mm x 1.4 mm. The MinLED is an obvious solution for small-scale,

MRF6S19060N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19060NR1 MRF6S19060NBR1 Designed for N- CDMA base station applications with frequencies from 1930

ipc 610 Class 3 pin protrusion

Abstract: MRF6S19060N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19060NR1 MRF6S19060NBR1 Designed for N - CDMA base station applications with frequencies from 1930

MRF6S21060N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21060N Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21060NR1 MRF6S21060NBR1 Designed for W- CDMA base station applications with frequencies from 2110