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    IPB80N06S2L-11 Search Results

    IPB80N06S2L-11 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB80N06S2L-11
    		Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 10.7 mOhm; ID (max): 80.0 A; RthJC (max): 0.95 K/W; Original PDF 157.99KB 8
    IPB80N06S2L11ATMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 Original PDF 130.7KB
    IPB80N06S2L11ATMA2
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 Original PDF 135.9KB
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    IPB80N06S2L-11 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB80N06S2L11ATMA2

    MOSFET N-CH 55V 80A TO263-3
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    DigiKey () IPB80N06S2L11ATMA2 Digi-Reel 323 1
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    IPB80N06S2L11ATMA2 Cut Tape 323 1
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    IPB80N06S2L11ATMA2 Tape & Reel 1,000
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    Avnet Americas IPB80N06S2L11ATMA2 Tape & Reel 9 Weeks 1,000
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    Verical () IPB80N06S2L11ATMA2 1,000 1,000
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    Rochester Electronics IPB80N06S2L11ATMA2 772 1
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    Infineon Technologies AG IPB80N06S2L11ATMA1

    MOSFET N-CH 55V 80A TO263-3
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    DigiKey IPB80N06S2L11ATMA1 Tape & Reel
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    Vyrian IPB80N06S2L11ATMA1 2,304
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