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    IPB80N06S2-09 Search Results

    IPB80N06S2-09 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB80N06S2-09
    		Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 8.8 mOhm; ID (max): 80.0 A; RthJC (max): 0.8 K/W; Original PDF 156.46KB 8
    IPB80N06S209ATMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 Original PDF 152.42KB
    IPB80N06S209ATMA2
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 80A TO263-3 Original PDF 157.45KB
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    IPB80N06S2-09 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB80N06S209ATMA2

    MOSFET N-CH 55V 80A TO263-3
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    DigiKey () IPB80N06S209ATMA2 Digi-Reel 1,004 1
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    IPB80N06S209ATMA2 Cut Tape 1,004 1
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    IPB80N06S209ATMA2 Reel 1,000 1,000
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    Avnet Americas IPB80N06S209ATMA2 Reel 9 Weeks 1,000
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    Mouser Electronics IPB80N06S209ATMA2 864
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    Verical IPB80N06S209ATMA2 890 219
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    Rochester Electronics IPB80N06S209ATMA2 977 1
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    EBV Elektronik IPB80N06S209ATMA2 10 Weeks 1,000
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    Infineon Technologies AG IPB80N06S209ATMA1

    MOSFET N-CH 55V 80A TO263-3
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    DigiKey IPB80N06S209ATMA1 Reel
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    Bristol Electronics IPB80N06S209ATMA1 429 2
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    Quest Components () IPB80N06S209ATMA1 343
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    IPB80N06S209ATMA1 343
    • 1 $3.60
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    Vyrian IPB80N06S209ATMA1 1,388
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    Infineon Technologies AG IPB80N06S209

    OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA IPB80N06S209 9,669
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