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    IPB083N10N3 G Search Results

    IPB083N10N3 G Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB083N10N3 G
    Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 8.3 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A; Original PDF 518.29KB 12
    IPB083N10N3GATMA1
    Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 80A TO263-3 Original PDF 757.05KB
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    IPB083N10N3 G Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB083N10N3GATMA1

    MOSFET N-CH 100V 80A D2PAK
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    IPB083N10N3GATMA1 Digi-Reel 9
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    Chip Stock IPB083N10N3GATMA1 30,630
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    Win Source Electronics IPB083N10N3GATMA1 22,510
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    Infineon Technologies AG IPB083N10N3G

    OptiMOS™3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
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    Win Source Electronics IPB083N10N3G 25,000
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