IPB06CN10N G Search Results
IPB06CN10N G Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Type | |
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IPB06CN10NG |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 100A TO263-3 | Original | |||
IPB06CN10N G |
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N-Channel MOSFETs (20V - 250V); Package: PG-TO263-3; Package: D2PAK (TO-263); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 100.0 A; | Original | |||
IPB06CN10NG |
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OptiMOS 2 Power-Transistor | Original |
IPB06CN10N G Price and Stock
Infineon Technologies AG IPB06CN10N GMOSFET N-CH 100V 100A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB06CN10N G | Reel | 1,000 |
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