IOTA Search Results

lambda alpha

Abstract: greek
Contextual Info: The Greek Alphabet Lower Case α β γ δ ε ζ η θ ι κ λ µ ν ξ ο π ρ σ τ υ φ χ ψ ω Upper Case Α Β Γ ∆ Ε Ζ Η Θ Ι Κ Λ Μ Ν Ξ Ο Π Ρ Σ Τ Ψ Φ Χ Ψ Ω Name Alpha Beta Gamma Delta Epsilon Zeta Eta Theta Iota Kappa Lambda

84-3MV

Abstract: twl3025 PTWL3025BZGM TWL3025BZGM TWL3025BZGMR identification trace code texas A07s texas instruments lot trace code t3025bggm twl3025bzqwr
Contextual Info: 12500 TI Boulevard, MS 8640, Dallas, Texas 75243 PCN# 20050304000 New Wafer Fab for IOTA A07s Final Change Notification Dear Customer: This is a final announcement of change to a device that is currently offered by Texas Instruments. The details of this change are on the following pages.

Contextual Info: POWER COAXIAL TERMINATIONS DC to 2.4 GHz RFT25ONF SPECIFICATIONS: Frequency Range: DC to 2.4 GHz VSWR: 1.15:1 -DC to 1.0GHz 1.35:1 IOta 2.4 GHz - Peak Power 2 kW max. Nominal Size: L,W,H 10 Weight: ‘/~ “x 4 ‘A “x 4 ¼“max. 6 ‘A lbs. (2.95 kg) max.

VOGT pd

Abstract: lm117 3.3V vogt 8 7703401T lem HA 7703401U LM117 OM1320NTM OM1320STM OMNIREL
Contextual Info: O M N I R E L CORP M3E D bTô'iOTa G O Q O b l B 1 IOMNI OM1320NTM OM1320STM 1.5 AMP POSITIVE ADJUSTABLE VOLTAGE REGULATOR APPROVED TO DESC DRAWING 7703401 Three Terminal, Precision Adjustable Positive Voltage Regulator In Hermetic JEDEC TO-257AA Package LM117

ConFlat

Abstract: conflat flange poppet valve wrench soleniod
Contextual Info: Series 9 and 99 Pulse Valves High-performance media resistant soleniod valves FEATURES • Flange mount, axial flow, 2-way normally closed valves · Operates as fast as 2 ms with IOTA ONE valve controller as fast as 160 µs · Delivers repeatable pulses and

Contextual Info: H IW «' « 2 it C r O S G iT ii V i r g i n 140 Commerce Drive M ontgom eryvilie, PA 18936-1013 le t: 215 631-9840 ^ _ . _ . _ _ SD1018-6 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS . » « . . » » FM GLASS C TRANSISTOR FREQUENCY 175MHz

2132M

Abstract: 576u
Contextual Info: Schottky Barrier Diode RB411VA-50 Dimensions Unit : mm Applications General rectification Land size figure (Unit : mm) 1.1 0.17±0.1 0.05 1.9±0.1 2.5±0.2 Features 1) Small mold type. (TUMD2) 2) High reliability. 0.8 0.5 2.0 1.3±0.05

Contextual Info: Data Sheet Schottky Barrier Diode RB481Y-90 Dimensions Unit : mm Applications Low current rectification Land size figure (Unit : mm) 0.5 0.22±0.05 (3) 1.2±0.1 (4) 1.55 0.13±0.05 Construction Silicon epitaxial planar (1) 0.5 1.6±0.1 1.6±0.05

Contextual Info: Schottky Barrier Diode RBQ30T45A Datasheet lDimensions Unit : mm lApplication lStructure General rectification 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 15.0±0.4 0.2 8.0 8.0±0.2 12.0±0.2 3) High reliability 5.0±0.2 1 Anode

Contextual Info: RF101A2S Diodes Fast recovery diode RF101A2S zApplications General rectification zDimensions Unit : mm CATHODE BAND (BLUE) 4 φ0.6±0.1 ① ② zFeatures 1) Cylindrical mold type. (MSR) 2) Ultra Low VF. 3) Ultra high switching. 4) Low switching loss. 5) High ESD.

Contextual Info: Schottky Barrier Diode Datasheet RB088T150 External dimensions Unit : mm Application Structure Switching power supply (2) 4.5±0.3 0.1 2.8±0.2 0.1 10.0±0.3 0.1 Features 1) Cathode common dual type (1) 3) High reliability

Contextual Info: Schottky Barrier Diode RB228NS100 Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) Switching power supply RB2281 NS100 lFeatures 1 1) Cathode common dual type 2) Low IR LPDS 3) High reliability 4) AEC-Q101 qualified lConstruction

Contextual Info: Schottky Barrier Diode RBQ30NS65A Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification BQ30NS 65A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar

Contextual Info: Schottky Barrier Diode RBQ10NS45A Datasheet lDimensions Unit : mm lApplication lLand size figure (Unit : mm) General rectification BQ10NS 45A lFeatures 1 1) Cathode common dual type (LPDS) LPDS 2) Low IR lStructure lConstruction Silicon epitaxial planar

Contextual Info: RB520CS-30 Diodes Schottky barrier diode RB520CS-30 z Land size figure Unit : mm z External dimensions (Unit : mm) zApplications Low current rectification 0.55 0.45 0.16±0.05 0.6±0.05 0.45 1.0±0.05 0.9±0.05 0.5 zFeatures 1) Ultra Small power mold type.

M314

Abstract: TMM314APL-1 TMM314APL1 TMM314AP TMM314AP-3 TMM314APL TMM314APL-3 APL-L TMM314A TMM314AP-1
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 1 024 W O RD x 4 B IT S T A T I C R AM N C H A N N E L S I L I C O N G A T E D E P L E T IO N L O A D T M M 3 14 A P L TMM3 14AP TMM3 14AP- 1 TMM3 14 A P L- 1 T*M M 3 14AP-3 TMM3 14 A P L -3 DESCRIPTION T M M 3 1 4 A P f a m ily is 1 0 2 4 w o rd x 4 b it high

RB751G-40

Contextual Info: RB751G-40 Diodes Schottky barrier diode RB751G-40 zApplications General rectification zLand size figure zExternal dimensions Unit : mm 0.13±0.03 0.6±0.05 0.5 0.5 1.2 zFeatures 1) Small power mold type. (VMD2) 2) Low VF 3) High reliability 1.4±0.1 1.0±0.05

RB161M-20

Contextual Info: RB161M-20 Diodes Schottky barrier diode RB161M-20 zApplications General rectification zLand size figure zExternal dimensions Unit : mm 0.15±0.03 1.6±0.1 0.85 3.5±0.2 0～0.1 3.05 ① zFeatures 1) Power mold type. (CPD3) 2) Low VF 3) High reliability 2.6±0.1

RB530XN

Contextual Info: RB530XN Diodes Schottky barrier diode RB530XN zExternal dimensions Unit : mm 2.0±0.1 各リードとも lead has same dimension 0.25 ＋0.1 Each －0.05 同寸法 (2) ＋0.1 －0.06 0.65 0.65 (4) 1.6 (1) 0.15 2.1±0.1 (5) 0～0.1 0.1～0.4 1.25±0.1

KF 13003 F

Abstract: KF 13003 tt442 13003 HJ mxl 5007 54HCT14 54HC14 HJ 13003 marking 2U diode t5 2yl1
Contextual Info: MIL-M-38510/657 30 S e p t e m b e r 1 9 8 6 MILITARY SPECIFICATION M I C R O C I R C U I T S , DI GI TA L, HIGH SPEED, CMOS, BUFFER GATES, MONOLITHIC SILICON T h i s s p e c i f i c a t i o n is a p p r o v e d ments and Agencies of the 1. f o r u s e b y all D e p a r t ­

RSX071VA-30

Contextual Info: RSX071VA-30 Diodes Shottky barrier diode RSX071VA-30 zApplication General rectification. zExternal dimensions Unit : mm zLead size figure (Unit : mm) 1.1 0.17±0.1 0.05 1.3±0.05 zFeatures 1) Small mold type. (TUMD2) 2) Low VF 3) High reliability.

Contextual Info: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R 2 P U B L IC A T IO N ALL R IG H TS LOC D IS T R E V IS IO N S RESERVED. C O P Y R IG H T D E S C R IP T IO N G6 RE VISED PER ECO-1 1 - 0 0 5 1 4 0 2 / 1 28MAR11 RK HMR FOR D D 1. 6 ± 0 . 1 5

EM FB

Contextual Info: 3 "1 2 m co ± 0 .0 5 r- OUTLINE HOUSING ± 0.1 ¿ f-0 1 .1 •2 5 . 4 - 3 - TAB OF H E A D E R CONTACT D I A 1. 1±0 .1 A-PL A C E S ± 0 .1 2-d > 2 tig i i ; lu — - 1 . 2 7 r Z X U j ^ g ^ LIp- n D I A 2 ±0 .1 2PLACES\ 9.35 rt _ 0 > K 2 —0 3 M i N_ ^

RSX071VA-30

Contextual Info: Data Sheet Schottky barrier Diode RSX071VA-30 Dimensions Unit : mm Applications General rectification. Land size figure (Unit : mm) 1.1 0.17±0.1 0.05 1.9±0.1 2.5±0.2 Features 1) Small mold type. (TUMD2) 2) Low VF 3) High reliability.