IOR 451 Search Results

Contextual Info: International IOR Rectifier PD - 9.1586 IRG4PC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: ft II P D - 9.1629 International IOR Rectifier IRG4BC30W PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve

Contextual Info: P D - 9.1593 International IOR Rectifier IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: PD 9.1462A International IOR Rectifier IRG4PC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: PD 9.1449A International IOR Rectifier IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: PD - 9.1448C International IOR Rectifier IRG4BC20U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

pv0402p

Abstract: 1002 ringer
Contextual Info: International IOR Rectifier Data Sheet No. 1.036C PV0402P Microelectronic HEXFET POW ER M O SFET PHOTOVOLTAIC RELAY P o w er ic Relay Single Pole, Normally Open + Ring Detector 0-400V, 120mA AC/DC General Description

Contextual Info: PD 9.1451A International IOR Rectifier IRG4BC30FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode .

Contextual Info: PD -9.1677A International IOR Rectifier IRG4BC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode

Contextual Info: PD -9.1471A International IOR Rectifier IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

DIODE V97

Contextual Info: International IOR Rectifier PD 9.1571 IRG4RC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode .

Contextual Info: International IOR Rectifier PD-9.1585A IRG4PC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, VGE = 15V

Contextual Info: Provisional Data Sheet No. PD-9.1438A International IOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM9064 REPETITIVE AVALANCHE AND P-CHANNEL RAD HARD Product Summary -60 Volt, 0.060£1, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology

DIODE RECTIFIER BRIDGE SINGLE 55a 600v

Abstract: IRG4PC50UD ir igbt BH rn transistor
Contextual Info: International Rectifier IOR PD -9.1471A IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

FA08TA60C

Abstract: C555
Contextual Info: International Rectifier IOR HEXFRED PD -2.601 HFA08TA60C Ultrafast, Soft Recovery Diode Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions VF = 1.8V

IRF3205 equivalent

Contextual Info: PD - 9.1374A International IOR Rectifier IRFI3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated

irfp3710

Abstract: RFPE30
Contextual Info: PD - 9.1490A International IOR Rectifier IRFP3710 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = "100V ^ D S o n = 0.025Î2

I628

Contextual Info: International IOR Rectifier IN S U LA TE D GATE pd-9.i628 IRG4PC30W PRELIMINARY BIPOLAR TR AN SISTO R Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve

IRLZ44N equivalent

Abstract: MARKING CODE 2B5
Contextual Info: PD -9.1498 International IOR Rectifier IRLIZ44N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated

IRL3705N

Contextual Info: P D - 9.1502 International IOR Rectifier IRL3705NS PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Surface Mount • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated

Contextual Info: International IOR Rectifier PD - 9 .1 5 9 3 IRG4BC30S PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

Contextual Info: I , .• I International PD 9.1402 PRELIMINARY IOR Rectifier IRFR/U5305 HEXFET Power MOSFET • • • • • • Ultra Low On-Resistance Surface Mount IRFR5305 Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated

Contextual Info: P D - 9.1586 International IOR Rectifier 4 30 S IRG PC PRELIMINARY Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter

rectifier d 355 n 2000

Abstract: transistor iqr
Contextual Info: International IOR Rectifier PD - 9.1592 IRG4BC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >50 kHz , and Short Circuit Rated to 10ps @ 125°C, VGe = 15V