INTERNATIONAL RECTIFIER SMD Search Results

pcb warpage in ipc standard

Abstract: JEDEC J-STD-033A J-STD-033A LGA rework JSTD033A reflow profile FOR LGA COMPONENTS AN1028 8015 j AN-1028 AN-1029
Contextual Info: Application Note AN-1028 Recommended Design, Integration and Rework Guidelines for International Rectifier’s BGA and LGA Packages by Kevin Hu, International Rectifier Table of Contents Page Introduction .1

IRF3205 smd

Abstract: irf640* spice regulator dpak SOIC 8P LDO 3.3 DAC Combo irf3205 spice ldo regulator iru1010-25cp IRU1050-CP
Contextual Info: International Rectifier LDOs and MOSFETs International Rectifier, the power conversion expert, offers optimal power semiconductors for portable, telecom, power supply, computer, motor drive, ballast, and automotive applications. More voltage ratings, from 20 V to 1000 V. More

AN-1031

Abstract: TO-247 FULLPAK Package
Contextual Info: Application Note AN-1031 Lead Bending and Soldering Considerations for International Rectifier’s Power Semiconductor Packages By Doug Butchers and Mark Steers, International Rectifier Introduction This application note is intended to address the two most frequently asked

Contextual Info: 4055432 0014722 bb3 • INR International i“R Rectifier PD-9.901 IRF630S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

1RF620S

Contextual Info: International k ?r Rectifier • PD-9.900 _ IRF620S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • 4A554S2 0014704 b4fi ■ INR Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching

Contextual Info: International ü g Rectifier HEXFET Power MOSFET 4Ô5S4S2 DD14«Î44 *INR PD-9.913 IRF9Z34S INTERNATIONAL RECTIFIER Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching

IRF1010S

Abstract: AIT smd
Contextual Info: MÖ55HS2 GG14Ö00 International k Rectifier =163 • IN R PD-9.923 IRF1010S INTERNATIONAL HEXFET® Power M O SFET RECTIFIER Advanced Process Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated

Contextual Info: MflSSMS2 0015332 330 M I N R International lj«R Rectifier _ IRL510S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • rU'y'yU Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive

IRHN9250

Abstract: Rad Hard in MOSFET P-Channel HEXFET Power MOSFET 0315a
Contextual Info: Provisional Data Sheet No. PD-9.1300 International M R Rectifier IRHN9250 HEXFET TRANSISTOR P-CHANNEL RAD HARD -200 Volt, 0 .3 1 5 a , RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: bSE ] International k Rectifier 4655452 0014bti2 3bcl H I N R PD-9.897 IRF530S INTERNATIONAL RECTIFIER HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature

dts200

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.1547 HEXFET POWER MOSFET IRFN150 N -C H A N N E L Product Summary 100 Voit, 0.0600 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.The effi­

Contextual Info: International H Rectifier PD-9.894 • I NR 4ÖSSMSE ÜÜ1SÖEÜ bbT IRFZ48S INTERNATIONAL RECTIFIER HEXFET® Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Ultra-Low On-Resistance Very Low Thermal Resistance

Contextual Info: 4B5545E 0015B44 DTE * I N R International 'k ?r Rectifier IR L 520S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • PD-9.908 Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive

Contextual Info: Provisional Data Sheet PD 9.679C International I R Rectifier irhn725o dv/dt RATED HEXFET TRANSISTOR IRHN8250 REPETITIVE AVALANCHE AND N-CHANNEL MEGA RAD HARD Product Summary 200 Volt, 0.1 On, MEGA RAD HARD HEXFET International Rectifier’s M EG A RAD HARD technology

GC 72 smd diode

Abstract: smd code marking gC SOT-23 smd marking gc diode bad sot23 smd 1p sot-23 smd diode marking 1P MARKING tAN SOT-23 diode
Contextual Info: PD - 9.1413C International I R Rectifier IRLMS5703 PRELIMINARY HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET Vqss = *30V R D S (o n ) = 0 . 2 0 Q Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.720B REPETITIV E AVALANCHE AND d v /d t RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N -CH A N N EL M EGA RAD HARD 100 Volt, 0.0550, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARD technology

Contextual Info: International io« Rectifier HEXFET Power MOSFET HfiSSUSS DDlMfibG 3SÔ « I N R PD-9.917 IR F 9 5 4 0 S INTERNATIONAL RECTIFIER Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature

smd diode marking code 0s

Abstract: mosfet SOT-223 marking code IOR smd diode marking B3
Contextual Info: P D - 91876 International IOR Rectifier IRFL1006 HEXFET Power MOSFET • Surface Mount • Advanced Process Technology • Dynamic dv/dt Rating • Fast Switching • Fully Avalanche Rated V dss = RüS on = 0.22Q CD < Id = 1 60V Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: Provisional Data Sheet No. PD-9.1546 International IQ R Rectifier HEXFET POWER MOSFET IRFN140 N -C H A N N E L Product Summary 100 Volt, 0.0770 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power M OSFET transistors.The effi­

Contextual Info: International j “R Rectifier HEXFET Power MOSFET • • • • • • • " MÔSS4S5 üül4ô3b 03T • INR ru-s.»io IRF9520S INTERNATIONAL RECTIFIER LSE D Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel

9916 mosfet

Abstract: AN-994 IRF9530S SMD-220
Contextual Info: PD-9.916 International i»R Rectifier IRF9530S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Description Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: International H i Rectifier HEXFET Power MOSFET 4 Ô S 5 4 5 2 Ü Ü 1 4 Ô B 4 317 I PD-9.914 INR IRF9510S INTERNATIONAL RECTIFIER Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature

Contextual Info: Provisional Data Sheet No. PD-9.1553A International IS R Rectifier HEXFET POWER MOSFET IRFN9140 P-CHANNEL Product Summary -100 Volt, 0.20ÎÎ HEXFET H E X F E T technology is th e key to International Rectifier’s advanced line of power M O SFET transis­

pj 68 SMD diode

Abstract: smd diode code pj 70 smd diode code pj smd diode code pj 50 smd diode code pj 24 st smd diode marking code smd marking code pj smd diode code pj 40 smd diode pj 55 smd diode code pj 65
Contextual Info: PD-9.1006 International S Rectifier IRF644S HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration HEXFETs from International Rectifier provide the designer