INTERNATIONAL DIODE CORP Search Results

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: NDB171 Transient Voltage Suppressor Diode Bi-directional ESD Protection TVS Diode General Description The NDB171 device is help protect sensitive electronic equipment against electrostatic discharge ESD . The NDB171 device is safely dissipate ESD strikes, exceeding the IEC 61000-4-2 International

smd zener diode color code

Abstract: zener DIODE smd color marking Zener diode smd marking code ja SOD-923 zener NDB171 COLOR CODE ON SMD DIODE
Contextual Info: NDB171 Transient Voltage Suppressor Diode Bi-directional ESD Protection TVS Diode General Description The NDB171 device is help protect sensitive electronic equipment against electrostatic discharge ESD . The NDB171 device is safely dissipate ESD strikes, exceeding the IEC 61000-4-2 International

Contextual Info: T/lzZ7 INTERNATIONAL SEniCOND 4 TE TD0D37B D00D0S3 1^3 • I S E M ]> CRD International Semiconductor, Inc. E C O N O M Y LIN E DO-35 & M E L F CURRENT REGULATOR DIODES A C R D is a diode which supplies constant current to an electronic circuit, even when power supply voltage fluctuations or load impedance fluctuations occur.

043b

Abstract: MTSS10010
Contextual Info: SLOTTED SWITCH MARKTECH INTERNATIONAL 1ÔE D ST^bSS 000043ti b a i - i ' s MTSS10010 INFRARED LED PHOTO IC MTSS10010 contains a gallium arsenide infrared emitting diode coupled to a monolithic integrated circuit, which in­ corporates a photodiode, a linear amplifier and a Schmitt

10KV DIODE

Contextual Info: Surging Ideas TVS Diode Application Note AN96-07 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com TRANSIENT IMMUNITY STANDARDS: IEC 1000-4-x On January 1, 1996, exports into Europe began facing some tough transient immunity standards. The International Electrotechnical Commission

Contextual Info: SLOTTED SWITCH MARKTECH INTERNATIONAL 1ÖE D S?T=lbS5 0ÜQ0432 1 T L M l- 1 3 M T SS 10000 INFRARED LED+ PHOTO IC M TSS10000 contains a gallium arsenide infrared emitting diode coupled to a monolithic integrated circuit, which in­ corporates a photodiode, a linear amplifier and a Schmitt

MTSS10000

Abstract: SWITCH T-MU-73
Contextual Info: MARKTECH INTERNATIONAL 1ÖE D S?T=lbS5 0ÜQ0H3E 1 SLOTTED SWITCH T L M l-1 3 M T S S 10000 INFRARED LED+ PHOTO IC MTSS10000 contains a gallium arsenide infrared emitting diode coupled to a monolithic integrated circuit, which in­ corporates a photodiode, a linear amplifier and a Schmitt

4842* diode

Abstract: INTERNATIONAL DIODE CORP Q2-100T Q12-200A 300b International Diode ql100 Q1-200B Q2-100C Q1-100C
Contextual Info: 4842608 INTERNATIONAL DIODE CORP INTERNATI ONAL DIODE CORP 90D 00039 TO TI m0 3 ‘0 ! D Dlf| 4fl42b0ñ □ □ □ □ 0 3 cl b | L O W C O S T S W I T C H I N G DI O D E S E L E C T R I C A L S P E C I F I C A T I O N S A T 2 5 °C TY P E NO. ma. ma. ma.

M5 DIODE 22-35

Abstract: 150-04DA fred module
Contextual Info: Fast Recovery Epitaxial Diode FRED Module MEK 150-04 DA VRRM = 400 V IFAV = 150 A trr = 300 ns Preliminary data 3 VRSM VRRM V V 400 400 Symbol 1 Type 2 3 TO-240 AA 2 1 MEK 150-04DA Conditions Maximum Ratings Features International standard package with DCB ceramic base plate

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

Contextual Info: L e e - M in t o o n g INTERNATIONAL DIODE CORP. 2 2 9 C LEVELAN D A V E . H A R R IS O N N J 0 7 0 2 9 2 0 1 4 8 2 -6 5 1 8 E L E C T R IC A L S P E C IF IC A T IO N S FOR LOW COST SW ITCH IN G DIODES C O M P R E H E N S IV E L IS T OF J E D E C R E G IS TE R E D T Y P E S M AN U FAC TU R ED BY

IGBT 200A 1200V application induction heating

Abstract: CM300DY-24NF pwm generation circuit for induction heating igbt high frequency 1200V POWEREX igbtmod CM300DC-24NFM CM300DU-24NFH IGBT power loss igbt for HIGH POWER induction heating induction heating igbt
Contextual Info: Optimizing 1200V IGBT Modules for High Frequency Applications Eric R. Motto*, John F. Donlon* Yoshikatsu Nagashima* * Powerex Incorporated, Youngwood, Pennsylvania, USA * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan Abstract - This paper presents a new 1200V 5th generation

TSMC 90nm sram

Abstract: tsmc 130nm metal process nmos transistor tsmc 130nm contact via design rule metal process applications of vlsi in antennas tsmc design rule front of fabrication process matched transistors 52NM
Contextual Info: Translating Yield Learning Into Manufacturable Designs Vijay Chowdhury, Irfan Rahim, Ada Yu and Girish Venkitachalam Altera Corp. San Jose, CA 95134 Introduction: Improving semiconductor yield is a multi-dimensional process that must include design, fabrication and test aspects. An

MOSFET 1200v 3a

Abstract: high frequency induction welding schematic difference between IGBT and MOSFET IN inverter n mosfet depletion 600V 3rd Generation of 1200V IGBT Modules 9DB-100 schematic induction heating igbt inverter schematic induction heating igbt for induction heating ic POWEREX igbtmod
Contextual Info: A Fast Switching 1200V CSTBT Junji Yamada*, Yoshiharu Yu*, Y. Ishimura* John F. Donlon*, Eric R. Motto* * Power Device Division, Mitsubishi Electric Corporation, Fukuoka, Japan * Powerex Incorporated, Youngwood, Pennsylvania, USA Abstract - A new 5th generation 1200V IGBT module with

IEGT 4500V

Abstract: IEGT trench static characteristics of mosfet and igbt mitsubishi igbt cm
Contextual Info: Characteristics of a 1200V CSTBT Optimized for Industrial Applications Yoshifumi Tomomatsu*, Shigeru Kusunoki*, Katsumi Satoh*, Junji Yamada*, Yoshiharu Yu*, John F. Donlon*, Hideo Iwamoto*, Eric R. Motto* *Fukuryo Semicon Engineering Corporation, Fukuoka, Japan

IEGT 4500V

Abstract: n mosfet depletion 600V IEGT IGBT 4500V mitsubishi igbt cm
Contextual Info: The CSTBT, a New 1200V Power Chip with Low VCE sat and Robust Short Circuit Withstanding Eric Motto*, John F. Donlon*, Yoshifumi Tomomatsu*, Shigeru Kusunoki* Katsumi Satoh*, Junji Yamada*, Yoshiharu Yu*, Hideo Iwamoto* * Fukuryo Semicon Engineering Corporation, Fukuoka, Japan

7BR25SA120

Abstract: design drive circuit of IGBT IR2112 application note IGBT cross reference IRGP30B120KD-E AN-983a IR igbt gate driver ic IR2112 equivalent IR2112 an-990
Contextual Info: “Positive Only” Gate Drive IGBTs Created by Cres Minimization By Richard Francis, Peter Wood and Arnold Alderman, International Rectifier Corporation As presented at PCIM 2001 +Vbus Previously, the general practice is to provide Insulated Gate Bipolar Transistors IGBTs with

Contextual Info: SLOTTED SWITCH 1ÖE » MARKTECH IN TE RNATIONAL ST'ììbSS 000043t, h MTSS10010 ai-i^ INFRARED LED+ PHOTO IC MTSS10010 contains a gallium arsenide infrared emitting diode coupled to a monolithic integrated circuit, which in­ corporates a photodiode, a linear amplifier and a Schmitt

Contextual Info: AP1004CMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Ultra-low Forward Diode BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 1.8m ID G Compatible with DirectFET Package MX Footprint and Outline

WA1500

Abstract: bolometer bolometer application lockin amplifier Microwave Photonics Systems GunnDiode Gunn Diode gunn diode datasheet RADIATION SPECTROMETER THEORY spiral antenna
Contextual Info: An Optically Integrated Coherent Frequency-Domain THz Spectrometer with Signal-to-Noise Ratio up to 80 dB Joseph R. Demers, Ronald T. Logan Jr. Elliott R. Brown Emcore Corporation Alhambra, California U.S.A. joe_demers@emcore.com, rlogan@emcore.com University of California, Santa Barbara

Contextual Info: AP1005BSQ Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lead-Free Package BVDSS D 30V RDS ON Low Conductance Loss Low Profile ( < 0.7mm ) 3.8m ID G Compatible with DirectFET Package SQ Footprint and Outline

Contextual Info: AP1002BMX Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lead-Free Package D ▼ Low Conductance Loss ▼ Low Profile < 0.7mm ▼ Compatible with DirectFET Package MX Footprint and Outline BVDSS 30V

high temperature reverse bias

Abstract: 95pf120 reliability testing report DIODE B-10 50PF120 50PFR120 95PFR120
Contextual Info: RELIABILITY REPORT 0209 DO5 PACKAGE DIODES GENERATION II QUALIFICATION REPORT International Rectifier Corporation Italy RELIABILITY LABORATORY INTERNATIONAL RECTIFIER CONTENTS Section 1 Introduction and Purpose: 2 Issue: 3 Process Description: 4 Executive Summary: