INTERNATIONAL CMOS TECHNOLOGY Search Results

Contextual Info: 37E J> INTERNATIONAL C M O S 40 40707 0000347 7 T-46-19-07 INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 18CV8-15/PEEL™18CV8-20 CMOS Programmable Electrically Erasable Logic Devic6 Features • Architectural Flexibility Advanced CMOS EEPROM Technology — —

Contextual Info: 37E D INTERNATIONAL C M O S 4Ô40707 GOQGBTl T MICT Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. T—46—19-07 PEEL 273-15 CMOS Programmable Electrically Erasable Logic Device Features • ADVANCED CMOS EEPROM TECHNOLOGY ■ FPLA ARCHITECTURE SUPERSET REPLACEMENT FOR PLS173

Contextual Info: INTERNATIONAL C M O S MÔ4D7Q7 00DQ3SÖ 1 37E D Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 20CG10-12/PEEL 20CG10=15 CMOS Programmable Electrically Erasable Logic Device Features • 1 Micron CMOS EEPROM Technology Architectural Flexibility — 92 product temi X 44 input AND array

Contextual Info: HÔM07Ü7 0Q003SD 7 M I C I 37E D INTERNATIONAL C M O S Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. T -4 6 -1 9 - o T PEEC18CV8-1 0/PEECm 18CV8-12 CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility • 1-Micron CMOS EEPROM Technology

Contextual Info: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. INTERNATIONAL C M O S 37E D H March 1991 4640707 0D0043T 1 IS ICT PEEL 22CV10A CMOS Programmable Electrically Erasable Logic Device Featu res ^ ^ ^ ~<^~7 Architectural Flexibility — 132 product term x 44 input AND array

Contextual Info: INTERNATIONAL C M O S 5SE D 4Ö407G7 GDD05D0 T Preliminary INTERNATIONAL CMOS TECHNOLOGY, INC. " P M H 3 - 4 7 PEEL*22CV1OZ "Zero Power” CMOS Programmable Electrically Erasable Logic Device Features Architectural Flexibility — 132 product term x 44 input AND array

8049 microcontroller APPLICATION

Contextual Info: INTERNATIONAL C M O S K 37E D • MÔ4070? D000307 b INTERNATIONAL CMOS Preliminary Data TECHNOLOGY, INC. _ _ ■ " r - q f c - i 's . 'i r ? l 93C56A/C66A 2,048/4,096-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM)

Contextual Info: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. 3 7E D May 1991 27CX256 a 4 8 4 0 7 0 7 0 0 0 0 4 3 4 256K 32K x 8 CMOS High-Speed EPROM INTERNATIONAL C M O S 5 Features • Advanced CMOS EPROM Technology High — — — Reprogrammability — Adds convenience, reduces costs

93C46

Abstract: IC 93c46 93c46 6
Contextual Info: 4ÖM070? OOOüa^b S M I C 37E D INTERNATIONAL C M O S 71 INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features • Read/Write Non-volatile Memory — Single 5V supply operation

Contextual Info: INTERNATIONAL C M O S 37E D 4040707 0000351 1 INTERNATIONAL CMOS TECHNOLOGY, INC. T-46-19-07 _TM PEEL20CG10 CMOS Programmable Electrically Erasable Logic Device Features A rchitectural F lexibility — 92 product term X 44 Input AND array — Up to 22 inputs and 10 outputs

PA7024

Contextual Info: INTERNATIONAL C M O S 25E D 4040707 Qoooasa T Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. ''M f e - a -4 "? TM PA7Ö24 PEEL Array CMOS Programmable Electrically Erasable Logic Array Features Flexible Architecture — Input registers and latches — I/O buried D, T and JK registers with

PEEL22CV10P

Abstract: ict PEEL22cv10p
Contextual Info: INTERNATIONAL C M O S 9: 3 7E 4 0 * 4 0 70 7 D 0Q003bb Product Previev; INTERNATIONAL CMOS TECHNOLOGY, INC. T ^ 6 - Í 9 0 / PEELLm 22CV1 0-12/PEE1T22CV10=15 CMOS Programmable Electrically Erasabi Logic Device Features Architectural Flexibility — 132 product term x 44 input AND array

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL253 CMOS Programmable Electrically Erasable Logic Device Features • ADVANCED CMOS EEPROM TECHNOLOGY ■ FPLA ARCHITECTURE ■ COMPATIBLE PERFORMANCE — tpD = 30ns max, to E = 30ns max SUPERSET REPLACEMENT FOR PLS153

Contextual Info: INTERNATIONAL C M O S 37E D 4040707 0 0 0 0 3 3 e ö T-46-19-07 INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 18CV8 CMOS Programmable Electrically Erasable Logic Device Features A rchitectural F lexibility — 74 product term x 36 input array — Up to 18 inputs and 8 I/O pins

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL173 CMOS Programmable Electrically Erasable Logic Device Features • FPLA ARCHITECTURE ■ ADVANCED CMOS EEPROM TECHNOLOGY — — — ■ LOW POWER CONSUMPTION — 35m A + 1 .OmA/MHz max ■ COMPATIBLE PERFORMANCE

Contextual Info: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. March 1991 PEEL 22CV10A CMOS Programmable Electrically Erasable Logic Device Features • Advanced CMOS EEPROM Technology Architectural Flexibility — 132 product term x 44 input AND array — Up to 22 inputs and 10 outputs

IC 93c46

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features • Advanced CMOS EEPROM Technology ■ Read/Write Non-volatile Memory — — — Single 5V supply operation 1,024 bits, 64 x 16 organization

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. Preliminary Data March 1989 TM Features Advanced CMOS EEPROM Technology High Performance, Low Power Consumption — tPD = 20ns, fmax= 37MHz — Icc = 55mA + 0.5mA/MHz EE Reprogrammability — Low risk reprogrammable inventory

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. Preliminary Data TM PA7024 PEEL Array CMOS Programmable Electrically Erasable Logic Array Features User-Configurable High Density Logic Array — — — — Flexible Architecture Create multi-level l/O-buried logic circuits

8049 microcontroller APPLICATION

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. Preliminary Data 93C46A 1,024-Bit Serial CMOS Electrically Erasable Programmable Read Only Memory EEPROM Features Ideal For Low-Denslty Data Storage — Low cost, space saving, 8-pin package — Commercial, industrial, & military versions

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEllM 153 CMOS Programmable Electrically Erasable Logic Device Features FPLA ARCHITECTURE — Programmable AND/OR arrays — 8 inputs and 10 l/Os — 42 product terms: 32 logic terms, 10 control terms — 10 sum terms • ADVANCED CMOS EEPROM TECHNOLOGY

MC14501

Abstract: S24036 9v smoke detector ionization MC145018 RE46C120 RE46C121 smoke detector asic smoke DETECTOR CIRCUIT DIAGRAM conclusion ion detector mc1450
Contextual Info: R&E International A Subsidiary of Microchip Technology Inc. RE46C121 CMOS Ionization Smoke Detector ASIC with Interconnect Product Specification General Description Features The RE46C121 is low power CMOS ionization type smoke detector IC. With few external components this

Contextual Info: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. September 1989 Features Ideal For Low-density Data Storage — Low-cost, space-saving 8-pin package — Commercial, industrial, & military versions — Interfaces with popular CMOS micro controllers- ie., COP4XX, uPD75XX,

PEEL18CV8P-35

Abstract: PEEL18CV8P-25
Contextual Info: INTERNATIONAL CMOS TECHNOLOGY INC. March 1989 Features ADVANCED CMOS EEPROM TECHNOLOGY ARCHITECTURAL FLEXIBILITY — 74 Product Term X 36 Input array — Up to 18 Inputs and 8 I/O pins — Independently configurable I/O macro cells: polarity, register, combinatorial, bi-directional