INT 5500 Search Results

Contextual Info: QBH-126 Amplifier P erform ance Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

Contextual Info: QBH-119 Amplifier P erform ance Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

Contextual Info: QB H -102 Amplifier P erform ance Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

ansaldo

Abstract: press-pack igbt igbt 1500v 5500W AGB1200 ANSALDO press pack diode 1500V Ansaldo Trasporti press-pack
Contextual Info: ANSALDOBREDA Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/ 0 10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - Ansaldo Trasporti s.p.a. Unita' Semiconduttori PRESS-PACKED IGBT AGB1200 1700 V 1200 A Collector-emitter Voltage

QBH-101

Contextual Info: QBH-101 Amplifier P e rfo rm a n c e Specifications Specifications Min/Max +25 °C Frequency MHz Gain (dB) Gain Flatness (dB) Noise Figure (dB) Power Out (dBm) 3rd Order Int (dBm) 2nd Order Int (dBm) Reverse Isolation (dB) Input VSWR Output VSWR DC Current (mA)

Contextual Info: VSKL300-08PbF www.vishay.com Vishay Semiconductors INT-A-PAK Power Module Thyristor/Diode, 300 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly

Contextual Info: VS-VSKL300/08PbF www.vishay.com Vishay Semiconductors INT-A-PAK Power Module Thyristor/Diode, 300 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly

SCR 2140

Abstract: VSKL300
Contextual Info: VSKL300-08PbF Vishay High Power Products INT-A-PAK Power Module Thyristor/Diode, 300 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage RoHS COMPLIANT • Industrial standard package • Simplified mechanical designs, rapid assembly

SCR 2140

Abstract: E78996 scr thyristor battery charger VSKL300
Contextual Info: VSKL300-08PbF Vishay High Power Products INT-A-PAK Power Module Thyristor/Diode, 300 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability

Contextual Info: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability

236PB

Contextual Info: Bulletin I27304 01/07 IRK.166, .196, .236.PbF SERIES STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules Features High Voltage Electrically Isolated by DBC Ceramic Al 2O 3 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability

SCR 2140

Contextual Info: VSKL300-08PbF Vishay High Power Products INT-A-PAK Power Module Thyristor/Diode, 300 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability

MPW1032

Abstract: MPW1027 MPW1000 MPW1021 MPW1022 MPW1023 MPW1024 MPW1026 MPW1031 MPW1036
Contextual Info: TOTAL POWER INT’L MPW1000 25 ~ 30 Watts 2:1 Wide Input Range DC/DC Converters Single Outputs Key Features: . . . . . . . . . High-Efficiency High Power Density 2:1 Input Range I/O Isolation 1500VDC Industry Standard Pinout SMT Technology Short Circuit Protection

c531 diode

Abstract: diode C531 C532 diode C529 DIODE IRGTIN025M12 C529
Contextual Info: International kjrJRectifier PD-9.1166 IRGTIN025M12 Low conduction loss IGBT "HALF-BRIDGE" IGBT INT-A-PAK •Rugged Design .Simple gate-drive .Switching-Loss Rating includes all “tail" losses .Short circuit rated Description IR's advanced IGBT technology is the key

IRK E78996 701819-303ac

Abstract: IRK E78996 p432 W08K K196
Contextual Info: I27096 rev. C 10/06 IRK. SERIES INT-A-pak ™ Power Modules STANDARD RECOVERY DIODES Features 165 A 195 A 230 A High voltage Electrically isolated base plate 3000 VRMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly

SFP70N06

Abstract: DSA00102119
Contextual Info: SFP70N06 Wisdom Technologies Int’l N-Channel MOSFET Features Low RDS on (0.015Ω )@VGS=10V • Low Gate Charge (Typical 65nC) Low Crss (Typical 150pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range (175°C) ■ ■ ■

Contextual Info: VSKL300-08PbF Vishay High Power Products INT-A-PAK Power Module Thyristor/Diode, 300 A FEATURES • Electrically isolated base plate • 3000 VRMS isolating voltage • Industrial standard package • Simplified mechanical designs, rapid assembly • High surge capability

IRK E78996 701819-303ac

Abstract: E78996 datasheet full bridge IRK E78996 IRK E78996 p432 E78996 datasheet bridge High Voltage Busbar IRF E78996 IRK 91 6600k
Contextual Info: Bulletin I27096 rev. A 09/97 IRK. SERIES INT-A-pakä Power Modules STANDARD RECOVERY DIODES Features 165 A 195 A 230 A High voltage Electrically isolated base plate 3500 V RMS isolating voltage Industrial standard package Simplified mechanical designs, rapid assembly

Contextual Info: PC8240 Integrated Processor Family Datasheet - Preliminary Specification Features • 6.6 SPEC int 95, 5.5 SPECfp95 at 266 MHz Estimated • Superscalar 603e Core • Integer Unit (IU), Floating-Point Unit (FPU) (User Enabled or Disabled), Load/Store Unit (LSU), System Register Unit (SRU),

VSKD 236

Abstract: vskj 56 9517
Contextual Info: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package

Contextual Info: VSK.166.PbF, VSK.196.PbF, VSK.236.PbF Series Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package

tp200

Abstract: Thyristor Modules MTC200TS120 MTC200
Contextual Info:  PRELIMINARY Thyristor Modules INT -A -PAK MTC200TS120/180 Features _International standard package With DBC ceramic base plate Planar passivated chips High surge capability UL recongnition pending _ _ _ VRRM =1200V- 1800V IFAVM =2x200A IFRMS=2x320A

Contextual Info: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage

Contextual Info: VS-VSK.166.PbF, VS-VSK.196.PbF, VS-VSK.236.PbF Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes, 165 A to 230 A INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage