INGAAS PIN PHOTODIODE, 1550 NEP Search Results

Contextual Info: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited

IAG 080

Abstract: photodiode ingaas ghz
Contextual Info: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited

InGaas PIN photodiode, 1550 NEP

Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
Contextual Info: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at

Contextual Info: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited

IAG 080

Contextual Info: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at

InGaas PIN photodiode, 1550 NEP

Abstract: quad photodiode psd quadrant photodiode InGaas PIN photodiode, 1550 sensitivity photodiode 850nm nep UDT Sensors Photodiode, 1550nm NEP InGaas PIN photodiode chip quad photodiode PIN photodiode 850nm
Contextual Info: InGaAs Quad Detectors 4 Quadrant Detectors for NIR Wavelengths The UDT InGaAs Quad series of Photodetectors allow position measurements of wavelengths from 850nm to 1700nm. The 4 Quadrant devices made of InGaAs come in 1mmφ InGaAs-1000-4 and 3mmφ (InGaAs-3000-4) sizes. They exhibit an excellent combination of High

photodiode InGaAs NEP

Contextual Info: Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging from 800 nm to 1700 Multiplexed InGaAs PIN Photodiode Array MXA-256-X 800 - 1700 nm nm. The array has 256 elements IN A

Infrared detectors

Abstract: dark detector application ,uses and working
Contextual Info: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use

PerkinElmer tr 1700

Abstract: PerkinElmer Avalanche Photodiode
Contextual Info: Features and Benefits PerkinElmer’s new family of APD modules features built in amplifier and thermoelectric cooler. They are ideal for demanding LIDAR and range-finding applications. Ultra low noise equivalent power NEP Introduction The new LLAM series of avalanche

opto 2561

Abstract: 2561 OPTO MXA-256-1 MXA-256-2 photodiode 256 elements PerkinElmer 1700 inGaAs photodiode 1550 array InGaas PIN photodiode, 1550 NEP
Contextual Info: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

InGaAs apd photodiode

Abstract: MAR 609 InGaas PIN photodiode, 1550 NEP InGaAs APD photodiode 1550 Tomography VBD1 photodiode 1550 NEP photodiode InGaAs NEP backside illuminated ingaas photodiode LIDAR
Contextual Info: SU200-01A-TO SU200-01A-SM Large Area InGaAs APDs The largest commercially available InGaAs APD, the SU200-01A is ideal for 1.25 Gbps free space optical communications laser range-finding applications, OTDR and high resolution Optical Coherence Tomography.

InGaas PIN photodiode, 1550 NEP

Abstract: PerkinElmer 1700 MXA-256-1 MXA-256-2 2561 OPTO photodiode array 1550 nm inGaAs photodiode 1550 array
Contextual Info: Imaging Telecom Multiplexed InGaAs PIN Photodiode Array MXA-256-1, 2 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-256-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging

InGaas PIN photodiode, 1550 NEP

Contextual Info: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ ZL60015

diode d1n914

Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

C30817E

Contextual Info: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP

C30817E

Abstract: datasheet apd 1550
Contextual Info: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,

germanium power devices corporation

Abstract: GM8HS InGaas PIN photodiode, 1550 NEP Germanium power diode germanium catalog GM7VHR gep800 ingaas apd photodetector GM2HS GM10HS
Contextual Info: Small & Large Area pn, pin Two-Color Detector OPTOELECTRONIC PRODUCTS Ge Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available Germanium Power Devices Corporation GPDOS00004 G Introduction/Glossary of Terms

Contextual Info: InGaAs APD Photo Diode Modules 4 Olsen Avenue, Edison, NJ 08820 USA phone: 732 549-9001 • fax: (732) 906-1559 www.laserdiode.com ISO 9001:2008 Certified • InGas APD Photodiode • Low Dark Current • High Speed 2GHz • 800nm to 1700nm Response • Miniature Package

InGaas PIN photodiode, 1550 NEP

Abstract: Si apd photodiode 1550 nm APD optical receivers APD 1550 nm Si apd InGaAs apd photodiode
Contextual Info: H1 Series APD Receivers DESCRIPTION The H1 avalanche photodiode / amplifier hybrids are low noise optical receivers for use in laser range finding, LIDAR and medical applications. Housed in a 12 pin TO-8 package they offer bandwidths up to 30 MHz, an onboard temperature sensor and a single

IAG200

Abstract: ABC550-04
Contextual Info: Detectors H0 Series Silicon and InGaAs-APD Receiver Description The H0-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in laser range finding, LIDAR, medical and analytical applications. Housed in a modified 5 pin TO-46 package they offer bandwidths up to 1 GHz and a single ended output. Higher bandwidth can be achieved

IAG080H0

Abstract: IAG080
Contextual Info: Detectors H0 Series Silicon and InGaAs-APD Receiver Description The H0-Series includes a Silicon or InGaAs Avalanche Photodiode with an optimized low noise hybrid preamplifier for the use in laser range finding, LIDAR, medical and analytical applications. Housed in a modified 5 pin TO-46 package they offer bandwidths up to 100 MHz and a single ended output.

Contextual Info: Small & Large Area pn, pin Two-Color Detector OPTOELECTRONIC PRODUCTS Ge Photodetectors • Large and Small Area • Wide Performance Range • TE Coolers and Dewars Available GPD Optoelectronics Corp. GPDO S00007 Introduction/Glossary of Jerms G Introduction

Contextual Info: PHOTODIODE InGaAs APD with preamp G9910-14 ROSA type, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High gain: 15 V/mW λ=1550 nm l Differential output l Responsivity: -5 to -33 dBm l Optical return loss: 35 dB l Isolation type: Housing and signal ground are