INGAAS PIN PHOTODIODE, 1550 NEC Search Results

NR8360JP-BC

Abstract: datasheet apd 1550 InGaAs apd photodiode apd 1550 OTDR avalanche photodiode ingaas ghz CEL avalanche photodiode ingaas ghz cooler thermistor APD InGaAs APD photodiode 1550
Contextual Info: PRELIMINARY DATA SHEET ø30 µm InGaAs AVALANCHE PHOTO DIODE NR8360JP-BC 14-PIN DIP MODULE WITH TEC FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated

Contextual Info: SIEMENS SBH52414X FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/lnP-PIN Photodiode • Designed for applications in passive-optical networks according FSAN, ITU-G.983

Siemens photodiode

Abstract: PIN photodiode crosstalk laser diode 1550 nm 1480 nm diode laser
Contextual Info: SBH92314x FSAN BIDI Transceiver Optical Module for ATM-PON OLT Applications, 1550 nm Emitting-/1300 nm Receiving Function, High Power DFB-Laser, InGaAs/InP-PIN Photodiode • Designed for applications in passive-optical networks according FSAN, ITU-G.983

InGaAs 1550 photodiode transimpedance amplifier P

Abstract: diode symbol InGaAs 1550 photodiode transimpedance amplifier
Contextual Info: SBH92344x FSAN BIDI Transceiver Optical Module for ATM-PON OLT Applications, 1550 nm Emitting-/1300 nm Receiving Function, High Power DFB-Laser, InGaAs/InP-PIN Photodiode with Burst Mode Transimpedance Amplifier • Designed for applications in passive-optical networks

Siemens Semiconductors

Abstract: Laser Diode 1550 nm dBm laser diode Spectral Width 1 nm, 1550 nm, power 2
Contextual Info: SBH52444x FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving function, High Power FP-Laser, InGaAs/InP-PIN Photodiode with 155 Mbit/s Transimpedance Amplifier • Designed for applications in passive-optical networks

Siemens Semiconductors

Abstract: InGaAs 1550 photodiode transimpedance amplifier InGaAs 1550 photodiode transimpedance amplifier P Siemens photodiode
Contextual Info: SBH52454x FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/InP-PIN Photodiode with 622 Mbit/s Transimpedance Amplifier • Designed for applications in passive-optical networks

laser diode 1550 nm

Abstract: Siemens photodiode InGaAs Photodiode 1550nm fp diode pigtail nm
Contextual Info: SBH52414x FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/InP-PIN Photodiode • Designed for applications in passive-optical networks according FSAN, ITU-G.983

circuit receiver module

Abstract: PIN-TIA PREAMPLIFIER TRANSIMPEDANCE optic fet SRP00245X SRP00x4xx SIEMENS RF MODULE
Contextual Info: Receiver Module with Preamplifier Description The SRP00x4xx are optical receiver modules which use a high-speed PIN photodetector coupled with a hybrid low noise transimpedance amplifier TIA for 1300 nm or 1550 nm optical communications. The PIN-Photodiode is made of InGaAs/InP and has an active

Contextual Info: SIEM ENS SBH92344X FSAN BIDI Transceiver Optical Module for ATM-PON OLT Applications, 1550 nm Emitting-/1300 nm Receiving Function, High Power DFB-Laser, InGaAs/lnP-PIN Photodiode with Burst Mode Transimpedance Amplifier • Designed for applications in passive-optical networks

Contextual Info: SIEM ENS SBH52444X FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving function, High Power FP-Laser, InGaAs/lnP-PIN Photodiode with 155 Mbit/s Transimpedance Amplifier • Designed for applications in passive-optical networks

Contextual Info: SIEMENS SBH92314X FSAN BIDI Transceiver Optical Module for ATM-PON OLT Applications, 1550 nm Emitting-/1300 nm Receiving Function, High Power DFB-Laser, InGaAs/lnP-PIN Photodiode • • Designed for applications in passive-optical networks according FSAN, ITU-G.983

Contextual Info: SIEM ENS SBH52454X FSAN BIDI Transceiver Optical Module for ATM-PON ONU Applications, 1300 nm Emitting-/1550 nm Receiving Function, High Power FP-Laser, InGaAs/lnP-PIN Photodiode with 622 Mbit/s Transimpedance Amplifier • Designed for applications in passive-optical networks

Infrared detectors

Abstract: dark detector application ,uses and working
Contextual Info: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use

EPITAXX

Abstract: EPITAXX ETX 300 ETX500T ETX3000T5 InGaAs Epitaxx linear 3000T5 ETX2000T5 InGaAs 1550 photodiode transimpedance amplifier EPITAXX ETX 75 inGaAs photodiode 1550
Contextual Info: =ss ETX 5001V ETX 1000T ETX 2000T5, ETX 3000T5 ERl iAAA Large Area InGaAs Photodiodes Features • High responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical

ETX2000T5

Abstract: ETX3000T5 ETX500T EPITAXX ETX 300 InGaas PIN photodiode, 1550 sensitivity noise diode LARGE SURFACE AREA PHOTODIODE photodiode high responsivity high shunt resistance 1550 epitaxx InGaAs Epitaxx
Contextual Info: E TX 500T, ET X 100 0 T ERi iMAA ETX 2 0 0 0 T 5 , ET X 300 0 T5 m m « Large Area InGaAs Photodiodes Features • Hiqh responsivity at 1300, 1550, and 850 nm. ■ Low dark current for high accuracy ■ High shunt resistance for low noise ■ Linear over wide range of input optical

MXA-512-1

Abstract: MXA-512-2 photodiode 256 elements silicon photodiode 512 elements
Contextual Info: Imaging Telecom Multiplexed InGaAs Photodiode Array MXA-512 800-1700 nm Multiplexed InGaAs PIN Photodiode Array Description The MXA-512-X detector is a hybrid focal plane Indium Gallium Arsenide PIN photodiode array with wavelength response ranging from 800 nm to 1700 nm. The

Contextual Info: PD ld PW Series WDM Bidirectional Transmitter & Receiver Modules Inc. Applications • • • • • • Passive Optical Networks FSAN Full Duplex Communications WDM Bi-Directional transmission over a single fiber CATV Digital or Analog Operation Features

InGaas PIN photodiode, 1550 NEP

Contextual Info: Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete products and replacement product lists, please visit http://products.zarlink.com/obsolete_products/ ZL60015

InGaas PIN photodiode, 1550 NEP

Abstract: Photodiode receiver specification for 1550 nm ISO 2768-mk ZL60015 ZL60015TBD ZL60015TDDB ZL60015TEDB photodiode 1550 NEP InGaAs 1550 photodiode transimpedance amplifier "ISO 2768-mK"
Contextual Info: ZL60015 Optical Receiver. 1310/1550 nm, 2.5 Gbps PIN + Pre-amp with Photocurrent Monitor Data Sheet January 2005 Ordering Information ZL60015TBD, TO-46 with lens The ZL60015 is also available assembled in standard optical receptacles, or with a 1m 9µm fiber

N7085

Abstract: IC for IR receiver pin photodiode 2 GHz 1550
Contextual Info: DATA SHEET NEC RECEIVER MODULE NDL5422P ELECTRON DEVICE 05O^m InGaAs PIN PHOTO DIODE FOR 2 .5 Gb/s BUTTERFLY MODULE W ITH MULTIMODE FIBER INTERNAL PRE-AMPLIFIER DESCRIPTION N DL5422P is an InGaAs PIN photodiode 6 pin b u tte rfly package module incorporating silicon pre-am plifier 1C. I t is especially

Contextual Info: LASER DIODE INC 15E D | 5305=105 0 0 0 0 4 5 3 0 | T - ‘f i -O S ’ SCW-1500 SERIES LASER DIODE, INC. 1550nm Single Mode Pigtailed Lasers FEATURES t> InGaAsP Buried Crescent Low Threshold Current P Hermetically Sealed Package Extended Operating Temperature Range

Contextual Info: PD ld Inc. PB Series 1310T/1310R and 1550T/1550R Bidirectional Modules Applications • • • • • • Passive Optical Networks FTTH/FTTC Full Duplex Communications Single Wavelength Bidirectional CATV Digital or Analog Operation Features • • •

OPTi Technologies

Contextual Info: B T & D TECHNOLOGIES SSE D • llflSDfl3 G00G353 7Ô7 ■ BTDT BT&D T PDC2201-1.2/2.4 E C H N O L O G I E S GaAs IC PINFET RECEIVER Applications: Features: • Ultra high reliability planar InGaAs PIN photodiode • Custom GaAs IC for high performance and stability

1550nm photodiode 1.6 Ghz

Abstract: 1550nm photodiode 5 Ghz LX3055 InGaAs Photodiode 1550nm
Contextual Info: LX3055 TM Coplanar InGaAs/InP PIN Photo Diode P RODUCTION D ATA S HEET Microsemi’s InGaAs/InP PIN Photo Diode chips are ideal for high bandwidth 1310nm and 1550nm optical networking applications. The device series offers high responsivity, low dark current, and