INGAAS PHOTODIODES 1310 1550 Search Results

VCSEL die bonding

Abstract: SATURN PY-CM11
Contextual Info: AXT PRODUCT INFORMATION 1300/1550nm InGaAs Monitoring PIN Photodiodes Part number: PY-CM11 Characteristics T=300K Conditions Wavelength range Responsivity Dark current Reverse breakdown Capacitance -3 V 1µA - 3 V, 1 MHz Min. 910 0.8 Typical 1310 0.85 Max.

forward reverse schematic diagram

Abstract: R-11-055-G-B R-11-075-G-B R-11-075-G-BB R-11-100-G-B R-11-300-G-B InGaAs photodiodes 1310 1550
Contextual Info: InGaAs PIN Photodiodes R-11-055-G-B • R-11-075-G-B/BB • R-11-100-G-B • R-11-300-G-B Features • InGaAs/ InP PIN Photodiode • High responsivity at 1310 nm and 1550 nm • Low dark current • Fast pulse response • -40 to 85˚C operating temperature

Ge APD

Abstract: PD-LD analog laser diode 6 GHz
Contextual Info: Analog InGaAs PIN Detectors Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 70 micron diameter active area detector that responds optimally to both 1310 and 1550

EPM635-75

Abstract: JDS Uniphase photodiode epm JDSU EPM InGaAs EPM 6xx JDS Uniphase photodiode epm 605 635-75 InGaas PIN photodiode, 1550 sensitivity pin photodiode 2 GHz 1550 epm 6xx series
Contextual Info: OPTICAL COMMUNICATIONS C-Band, L-Band, Pass-Band Low-Leakage PIN Photodiodes EPM 6xx Series Key Features • Electro-optical - Low back reflection - High responsivity in L-band at 1625 nm EPM 606 • Packaging - Single-mode 900 µm fiber with or without a connector

InGaas PIN photodiode, 1550 ,sensitivity

Abstract: JDS Uniphase photodiode epm 605 InGaAs photodiodes 1310 1550 PIN Photodiode 4 Ghz 1550 nm JDS Uniphase photodiode epm pin photodiode 1550 sensitivity JDSU EPM
Contextual Info: Product Bulletin C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes EPM 6xx Series The JDS Uniphase EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in

JDSU EPM

Abstract: JDS Uniphase photodiode epm 605 EDFA L-C band pin photodiode 2 GHz 1550 EPM635
Contextual Info: OPTICAL Communications C-Band, L-Band, Pass-Band Low-Leakage PIN Photodiodes EPM 6xx Series Key Features • Electro-optical − Low back reflection − High responsivity in L-band at 1625 nm EPM 606 • Packaging − Single-mode 900 µm fiber with or without a connector

JDS Uniphase photodiode epm 605

Abstract: JDS Uniphase photodiode epm 606LL InGaas PIN photodiode, 1550 sensitivity pin photodiode 1550 sensitivity epm 6xx series pin photodiode 1550 InGaas PIN photodiode, 1550 sensitivity application photodiode 1550 nm EPM605LL
Contextual Info: Product Bulletin EPM 6xx Series C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes 605 606 613 650 The JDS Uniphase EPM 6xx Series PIN photodiodes are designed for optical network monitoring applications. The photodiode die is fabricated with a proprietary InGaAs process in

Contextual Info: Bauelemente fur die LWL-Technik Semiconductor Devices for FiberOptic Systems Detektoren f ur Glasfaseranwendungen Detectors for glass fiber applications InGaAs/InP-PIN-Fotodioden InGaAs/lnP PIN photodiodes fur das 2. 1300 nm und 3. (1550 nm) DurchlaBfenster

JDSU EPM

Abstract: 635-75 EPM635-75 JDS Uniphase photodiode epm 606LL-250 pin Photodiode 1550 nm dual photodiode EPM(R)-04-V L-Band 1200-1400 MHz photodiode 1550 nm
Contextual Info: COMMUNICATIONS COMPONENTS C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes EPM 6xx Series Key Features • Electro-optical - Low back reflection - High responsivity in L-band at 1625 nm EPM 606 • Packaging - Single mode 900 µm fiber with or without a connector

InGaAs Epitaxx EPM

Abstract: JDS Uniphase photodiode epm 605 606L EPM605LL JDS Uniphase photodiode epm EPITAXX 605 EPITAXX PIN Photodiode 4 Ghz 1550 nm pin photodiode 1550 sensitivity EPITAXX EPM
Contextual Info: Product Bulletin EPM 6xx Series C-Band, L-Band, Pass Band Low Leakage PIN Photodiodes 605 606 613 650 Preliminary Specifications C-Band Monitor L-Band Monitor Pass Band Monitor General Purpose Monitor Conditions unless noted : Temperature = 25°C, VR = 5V

diode code m10

Abstract: avalanche photodiodes 1650nm APD 10ghz
Contextual Info: Detectors for Fiber Optics: InGaAs Avalanche Photodiodes 80 µm InGaAs APDs PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate front-illuminated 80 micron diameter active area

InGaAs photodiode 1310 1550

Abstract: InGaAs photodiodes 1310 1550 PD-1500 pin PD connector SC 1550 photodiode 1550 nm
Contextual Info: Optoway PD-1500 * InGaAs PIN PD MODULES PD-1500 SERIES InGaAs PIN PHOTODIODE WITH RECEPTACLE * *

Contextual Info: PD LD Inc. PDINJ Series Analog InGaAsP PIN Photodiodes Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 75 micron diameter active area detector

PIN photodiode 1310

Abstract: PD-1500 InGaas PIN photodiode, 1550
Contextual Info: Optoway PD-1500 * InGaAs PIN PD MODULES PD-1500 SERIES InGaAs PIN PHOTODIODE WITH RECEPTACLE *

fld3c2pj

Abstract: FSX51 FLD5F6CX FMM362HE Fujitsu FLD5F6CX FLD148G3NL FRM5W231DR 382CG single frequency laser 1550 butterfly FMM381CG
Contextual Info: LIGHTWAVE COMPONENTS & M ODULES LASER DIODE MODULES OPTICAL AND ELECTRICAL CHARACTERISTICS TL = 25°C or Tc = 25°C Part Number Ith (mA) Vf (V) CW CW (typ) If = Pf Pth (mW) (mW) CW (min.) CW dF=lth) CW at Pf VDR=5V - 0.2 9* en •> 3.0 (lp=600 mA) o o o o

photodiode 325 nm -1100 nm

Abstract: PDINJ075FCCB-O-V-MM Receptacle InGaAs Photodiode 1550nm
Contextual Info: PD Inc LD PDINJ Series Analog InGaAsP PIN Photodiodes Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 75 micron diameter active area detector

analog PIN Photodiode 3GHz

Abstract: Receptacle InGaAs Photodiode 1550nm PDINJ075FCCB-O-V-MM
Contextual Info: PD Inc LD PDINJ Series Analog InGaAsP PIN Photodiodes Analog InGaAs PIN Detectors PD-LD Inc. offers low noise, high responsivity analog InGaAsP photo detectors in convenient fiber coupled packages. These assemblies incorporate 75 micron diameter active area detector

PD-1100

Abstract: InGaAs photodiodes 1310 1550 InGaAs photodiode 1310 1550 InGaAs Photodiode 1550nm
Contextual Info: Optoway PD-1100 * InGaAs PIN PHOTODIODES PD-1100 SERIES *

Infrared detectors

Abstract: dark detector application ,uses and working
Contextual Info: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use

Contextual Info: Optoway PD-1350 * Mini-Size InGaAs PIN PD MODULE PD-1350 InGaAs PIN PHOTODIODE WITH SINGLE-MODE FIBER PIGTAIL

inGaAs photodiode 1550

Abstract: PD-1100 InGaAs Photodiode 1550nm
Contextual Info: Optoway PD-1100 * InGaAs PIN PHOTODIODES PD-1100 SERIES *

VCSEL 1550 nm 1 Gbps

Abstract: PY-CK11
Contextual Info: Preliminary specification 1300/1550nm 1~4 Gbps InGaAs PIN Photodiodes Part number: PY-CK11 Characteristics T=300K Bandwidth Wavelength range Responsivity Dark current Reverse breakdown Capacitance Rise/Fall time (20%/80%) Conditions -3 V -3 V 1µA - 3 V, 1 MHz

PD-1150-075

Abstract: PD-1150-100 PD-1150-XXX PD-1155-075 PD-1155-XXX photodiode responsivity 1550nm 2 InGaAs Photodiode 1550nm
Contextual Info: Optoway PD-1150-XXX * InGaAs PIN PHOTODIODES PD-1150-XXX PIN Photodiode with Mini-Size TO Package

VCSEL die bonding

Abstract: PY-CT11 InGaAs 0.85 um
Contextual Info: Preliminary specification 1300/1550nm 10Gbps Gbps InGaAs PIN Photodiodes Part number: PY-CT11 Characteristics T=300K Bandwidth Wavelength range Responsivity Dark current Reverse breakdown Capacitance Rise/Fall time Conditions -3 V -3 V 1µA - 3 V, 1 MHz