INGAAS LED Search Results
INGAAS LED Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| RJMG3128711BANR |
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RJMG 1x2 10G, with led | |||
| RJMG3018241BAEH |
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RJMG 1x1 10G, with led | |||
| RJMG3226U11E3ER |
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RJMG 2x6 10G, with led | |||
| RJMG301T221E3ER |
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RJMG 1x1 10G, with led | |||
| RJMG221034170NR |
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RJMG, Input output Connectors, 2x1,1G,with LEDs |
INGAAS LED Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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G8051-512R
Abstract: C8060 C8061 C8062 G8050-256R G8050-256S G8051-512S G8052-256R G8052-256S G8053-512R
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C8060, C8061, C8062 C8062 C8060 C8061 G8051-512R C8060 G8050-256R G8050-256S G8051-512S G8052-256R G8052-256S G8053-512R | |
CDS light sensor
Abstract: G8050 G8051 G8052 G8052-256D G8053 G8053-512D infrared cmos digital image
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G8050 G8053 SE-171 KMIR1009E04 CDS light sensor G8051 G8052 G8052-256D G8053-512D infrared cmos digital image | |
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Contextual Info: TLP293-4 TOSHIBA PHOTOCOUPLER InGaAs IRED & PHOTO-TRANSISTOR TLP293-4 Programmable Controllers Switching Power Supplies Simplex/Multiplex Data Transmissions Unit in mm TLP293-4 consists of phototransistors optically coupled to InGaAs infrared emitting diodes. |
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TLP293-4 TLP293-4 3750Vrms) | |
1200nmContextual Info: DATA SHEET 4.25GBPS 1310NM PIN + PREAMP TO-46 PACKAGE HFD3041-203 FEATURES: Low electrical parasitic TO-46 package High performance InGaAs PIN photodiode with separate transimpedance amplifier The HFD3041-203 use a high-performance InGaAs PIN photo-detector |
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25GBPS 1310NM HFD3041-203 155Mbps HFD3041-203 1200nm 1600nm. | |
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Contextual Info: TLP292-4 TOSHIBA PHOTOCOUPLER InGaAs IRED & PHOTO-TRANSISTOR TLP292-4 Programmable Controllers Switching Power Supplies Simplex/Multiplex Data Transmissions Unit in mm TLP292-4 consists of phototransistors optically coupled to two InGaAs infrared emitting diodes connected inverse parallel, and can operate directly |
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TLP292-4 TLP292-4 3750Vrms) | |
LED pigtailed 1310nm
Abstract: PIN photodiode 5ghz LED 1310 nm pigtailed PIN-1310-5I-XXX 1310nm laser diode for 10Gbps photodiode 1550nm pigtailed
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1310NM PIN-1310-5I-XXX PIN-1310-5I-XXX 100cm 1-866-MY-VCSEL LED pigtailed 1310nm PIN photodiode 5ghz LED 1310 nm pigtailed 1310nm laser diode for 10Gbps photodiode 1550nm pigtailed | |
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Contextual Info: TLP293 TOSHIBA PHOTOCOUPLER InGaAs IRED & PHOTO-TRANSISTOR TLP293 Power Supplies Programmable Controllers Hybrid ICs Unit: mm TLP293 consists of a low input type photo transistor optically coupled to an InGaAs infrared emitting diode. TLP293 is housed in the SO4 package, very small and thin coupler. |
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TLP293 TLP293 | |
Infrared detectors
Abstract: dark detector application ,uses and working
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Contextual Info: InGaAs multichannel detector head C10854 Near infrared line camera Line rate: 31.25 kHz The C10854 is a multichannel detector head suitable for applications where high-speed response is required, such as SDOCT (spectral domain-optical coherence tomography) and sorting machines. The HAMAMATSU G10768 series InGaAs nearinfrared linear image sensor (sold separately) can be easily installed in the C10854. |
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C10854 C10854 G10768 C10854. 32-bit 64-bit C10854, B1201, | |
2207BContextual Info: N E C ELECTRONICS INC bSE H • bM2752S 0038123 7X1 « N E C E DATA SHEET NEC PHOTO DIODE NDL5510C ELECTRON DEVICE 1 OOO to 1 600 nm OPTICAL FIBER COMMUNICATIONS ^80 „m InGaAs AVALANCHE PHOTO DIODE DESCRIPTION NDL5510C is an InGaAs Avalanche Photodiode especially designed for a detector of long wavelength optical fiber communica |
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bM2752S NDL5510C NDL5510C NDL5520P DLS501P NDL5520P1 NDL5501P1 NDL5506P: Gl-50 DL5516P: 2207B | |
ingaas LEDContextual Info: Infrared LED L10822 series Peak emission wavelength: 1.3 m The L10822 series is a long wavelength LED using an InGaAs chip. Peak emission occurs at 1.3 μm, making the L10822 series suitable for detection of moisture. Features Applications Peak emission wavelength: 1.3 μm |
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L10822 L10822-01) SE-171 KLED1056E01 ingaas LED | |
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Contextual Info: 化合物光半導体 受光素子 1 InGaAs/GaAs PINフォトダイオード 1-1 1-2 特性 使い方 2 InGaAs APD 2-1 2-2 2-3 動作原理 特性 使い方 第 章 6 8 MCT HgCdTe 光起電力素子 8-1 8-2 特性 使い方 9 複合素子 10 オプション |
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259012-1
Abstract: ingaas LED
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100mA 259012-1 ingaas LED | |
L8245Contextual Info: LED Infrared LED L8245 Peak emission wavelength: 1.65 µm L8245 is a long-wavelength infrared LED using an InGaAs chip. The peak emission occurs at a wavelength near the methane gas absorption band, making L8245 ideal for a light source for methane gas detection. |
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L8245 L8245 SE-171 KLED1034E02 | |
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Contextual Info: LED - Chip ELC-1050-17-1 01.07.2011 rev. 03 Radiation Type Technology Electrodes Infrared MQW InGaAs/InP P anode up typ. dimensions (µm) 360 305 typ. thickness 360 260 µm anode R 11 6 gold alloy, 1.5 µm cathode gold alloy, 0.5 µm LED-11a Maximum Ratings |
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ELC-1050-17-1 LED-11a EL2-1050-17-1 D-12555 | |
1A33
Abstract: 850 nm LED trr1a TRR-1A33
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TRR-1A33 1A33 850 nm LED trr1a TRR-1A33 | |
ingaas LED
Abstract: 130025 ELC-1300-25 ELC-27
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ELC-1300-25 ELC-27 ingaas LED 130025 ELC-1300-25 ELC-27 | |
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Contextual Info: LED - Chip ELC-980-17-1 01.07.2011 rev. 05 Radiation Type Technology Electrodes Infrared MQW InGaAs/InP P anode up typ. dimensions (µm) 360 305 typ. thickness 260 (±20) µm 11 6 360 anode gold alloy, 1.5 µm R cathode gold alloy, 0.5 µm LED-11a Maximum Ratings |
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ELC-980-17-1 LED-11a EL2-980-17-1 D-12555 | |
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Contextual Info: Infrared LED L10823 series Peak emission wavelength: 1.65 m The L10823 series is a long wavelength infrared LED using an InGaAs chip. The peak emission occurs at a wavelength near the methane gas absorption band, making the L10823 series suitable for a light source for methane gas detection. |
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L10823 L10823-01) SE-171 KLED1057E01 | |
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Contextual Info: A l V I f * Catalog 1307612 InGaAs Photodetector Products i Revised 7-01 Multimode Features • High reliability passivated planar structure ■ High responsivity ■ Low dark current ■ Low capacitance ■ Hermetically sealed TO-18 style package installed in |
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120pm | |
R6094 pmt divider circuit
Abstract: Hamamatsu r6094 C9321CA-02 R4110U-74 AUTOMATIC STREET LIGHT CONTROLLER using IR sensor InGaas PIN photodiode chip back illuminated apd raman wafer 60g H9656 sensor x-ray
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31-Nov R6094 pmt divider circuit Hamamatsu r6094 C9321CA-02 R4110U-74 AUTOMATIC STREET LIGHT CONTROLLER using IR sensor InGaas PIN photodiode chip back illuminated apd raman wafer 60g H9656 sensor x-ray | |
InGaas PIN photodiode, 1550nm, 3Ghz
Abstract: 1310nm ROSA 10Gbps PIN-1310-2I-LCA sdi distributed amplifier VCSEL 1310NM 1310nm fiber optic for 10Gbps rosa to56 1310NM 980nm ROSA 10Gbps
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1310NM PIN-1310-2I-LCA PIN-1310-2I-LCA 1200nm 1600nm. O46package 1-866-MY-VCSEL InGaas PIN photodiode, 1550nm, 3Ghz 1310nm ROSA 10Gbps sdi distributed amplifier VCSEL 1310NM 1310nm fiber optic for 10Gbps rosa to56 1310NM 980nm ROSA 10Gbps | |
optical source
Abstract: 1310nm ROSA 10Gbps optical ROSA
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1310NM PIN-1310-2I-LCA PIN-1310-2I-LCA 1200nm 1600nm. O46package 1550nm 1-866-MY-VCSEL optical source 1310nm ROSA 10Gbps optical ROSA | |
1310nm ROSA 10Gbps
Abstract: 1310nm fiber optic for 10Gbps 1310nm photodiode for 10Gbps LED 1310 nm fiber coupled ROSA for video 1550nm optical detector 10Gbps 1550nm photodiode 1.6 Ghz 1550nm pin detector TO56 laser ingaas LED
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1310NM PIN-1310-2I-LCA PIN-1310-2I-LCA 1200nm 1600nm. O46package 1-866-MY-VCSEL 1310nm ROSA 10Gbps 1310nm fiber optic for 10Gbps 1310nm photodiode for 10Gbps LED 1310 nm fiber coupled ROSA for video 1550nm optical detector 10Gbps 1550nm photodiode 1.6 Ghz 1550nm pin detector TO56 laser ingaas LED | |