INFRARED SOURCE Search Results
INFRARED SOURCE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
UDS2983R/B |
![]() |
UDS2983 - High Voltage, High Current Source Driver |
![]() |
||
UDS2981R/B |
![]() |
UDS2981 - High Voltage, High Current Source Driver |
![]() |
||
LUSB3193002 |
![]() |
Lockable USB 3.0, Right Angle, with locking latch, For IR Reflow Pin in Paste | |||
TIR1000IPWR |
![]() |
Standalone IrDA Encoder & Decoder 8-TSSOP -40 to 85 |
![]() |
![]() |
|
OPT3004DNPR |
![]() |
Digital ambient light sensor (ALS) with increased angular IR rejection 6-USON -40 to 85 |
![]() |
![]() |
INFRARED SOURCE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
FILM CAP
Abstract: infrared sources To5 transistor header 600C IR40 ir source infrared infrared source
|
Original |
IR-40 FILM CAP infrared sources To5 transistor header 600C IR40 ir source infrared infrared source | |
GaAs 850 nm Infrared Emitting Diode
Abstract: TLN217
|
Original |
TLN217 TLN217 GaAs 850 nm Infrared Emitting Diode | |
TLN217Contextual Info: TLN217 TOSHIBA Infrared LED GaAℓAs Infrared Emitter Preliminary TLN217 Infrared Light-Emitting Diode for Still Camera Light Source for Auto Focus Unit: mm The TLN217 is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip. |
Original |
TLN217 TLN217 | |
Contextual Info: TLN1108 T11 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN1108(T11) Unit: mm ○ Infrared LED for Space-Optical-Transmission ○ Light Source for Infrared Cameras ○ Opto-Electronic Switches • Surface-mount devices • Package size • High radiant power : PO = 70mW (typ.) @100mA |
Original |
TLN1108 18mW/sr 100mA 100mA | |
TLN217Contextual Info: TLN217 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN217(F) Lead Free Product Infrared Light-Emitting Diode for Still Camera Unit: mm Light Source for Auto Focus The TLN217(F) is a high output infrared LED employing a new structure of GaAℓAs current confining LED chip. |
Original |
TLN217 | |
LN189LContextual Info: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical |
Original |
LN189L LN189L | |
LN189SContextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical |
Original |
LN189S LN189S | |
LN189SContextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical |
Original |
LN189S LN189S | |
Contextual Info: Infrared Light Emitting Diodes LN189M GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical |
Original |
LN189M 100mA | |
LN189LContextual Info: Infrared Light Emitting Diodes LN189L GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow directivity using spherical lenses; works well with optical |
Original |
LN189L LN189L | |
gold detectors circuit
Abstract: L6409-G MR16 dimensions MR11 L514-G L515-G L517A-G L519-G L521-G L523-G
|
Original |
L517A-G L519-G L514-G L515-G L521-G L523-G L6408-G L6409-G gold detectors circuit L6409-G MR16 dimensions MR11 L514-G L515-G L517A-G L519-G L521-G L523-G | |
TLN212Contextual Info: TLN212 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN212(F) Lead Free Product Infrared Light−Emission Diode For Still Camera Unit: mm Light Source For Auto Focus • Optical radiation of current confining LED chip is condensed by a resin lens. • |
Original |
TLN212 136sr | |
TLN212Contextual Info: TO SH IBA TLN212 TOSHIBA INFRARED LED GaAÍAs INFRARED EMITTER TLN212 INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA Unit : mm LIGHT SOURCE FOR AUTO FOCUS 4.5 + 0.3 4.5 ± 0.3 r -• • High output • Effective emission diameter of 388 X 296 /¿m |
OCR Scan |
TLN212 TLN212 | |
TLN210Contextual Info: TLN210 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN210(F) Lead Free Product Infrared Light-emission Diode For Still Camera Light Source For Auto Focus Unit: mm • Optical radiation of current confining LED chip is condensed by a resin lens. • High output |
Original |
TLN210 | |
|
|||
Contextual Info: OPTEK Infrared Emitting Diodes Optek remains unchallenged as the industry's most complete high quality source for infrared emitters. The latest state-of-the-art solution grown epitaxial techniques are used to produce the high quality GaAs and GaAIAs diode material required to make Optek infrared emitting |
OCR Scan |
||
TLN233Contextual Info: TLN233 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN233 Infrared LED for Space-Optical-Transmission Unit: mm • High radiant intensity: 80 mW/sr typ. at IF = 50 mA • Half-angle value: θ • A light source for remote control • Wireless AV-signal transmission purpose |
Original |
TLN233 TLN233 | |
TLN231
Abstract: "infrared led" 800 nm 980 nm
|
Original |
TLN231 TLN231 "infrared led" 800 nm 980 nm | |
"infrared led" 800 nm 980 nm
Abstract: TLN233
|
Original |
TLN233 "infrared led" 800 nm 980 nm | |
TLN233
Abstract: infrared medical
|
Original |
TLN233 TLN233 infrared medical | |
TLN233Contextual Info: TLN233 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN233(F) Lead(Pb)-Free Infrared LED for Space-Optical-Transmission • High radiant intensity: 80 mW/sr (typ.) at IF = 50 mA • Half-angle value: θ1/2 = ±13° (typ.) • A light source for remote control |
Original |
TLN233 | |
TLN231Contextual Info: TLN231 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN231(F) Lead Free Product Infrared LED for Space-Optical-Transmission • High radiant intensity: 60 mW/sr (typ.) at IF = 50 mA • Half-angle value: θ1/2 = ±16° (typ.) • A light source for remote control |
Original |
TLN231 | |
OSI photo detector
Abstract: 1N6266
|
OCR Scan |
1N6266 1N6266 L14G1. OSI photo detector | |
Contextual Info: TLN231 F TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN231(F) Lead Free Product Infrared LED for Space-Optical-Transmission • High radiant intensity: 60 mW/sr (typ.) at IF = 50 mA • Half-angle value: θ1/2 = ±16° (typ.) • A light source for remote control |
Original |
TLN231 | |
TLN231Contextual Info: TLN231 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN231 Infrared LED for Space-Optical-Transmission • High radiant intensity: 60 mW/sr typ. at IF = 50 mA • Half-angle value: θ1/2 = ±16° (typ.) • A light source for remote control • Wireless AV-signal transmission purpose |
Original |
TLN231 TLN231 |