INFRARED SENSOR S7 Search Results

Contextual Info: •SUPER INTENSITY INFRARED LED 92 4b7fll5fl D00242b S7b |>| Sensor ▼PACKAGE DIMENSIONS Unit : mm

MTD7030

Contextual Info: MARKTECH INTERNA TI ONA L 1ÖE D INFRARED LED r;qi-'n MTEllOO GaAs INFRARED EMITTER STTThSS 0QQ03ÔS H INFRARED LED FOR PHOTO SENSOR APPLICATIONS • R EM O T E C O N T R O L S Y S T E M • OPTICAL SW ITCH FEATURES 1. ANODE 2. CATHODE • Output spectrally compatible with silicon sensor

Contextual Info: _ REFLECTIVE SWITCH -"73 MARKTECH INTERNATIONAL 1ÔE » • 571*^55 G0GD4S7 3 ■ MTRS9040 INFRARED LED & PHOTO TRANSISTOR APPLICATIONS HIGH SENSITIVE OPTICALLY REFLECTIVE SENSOR • OPTICAL SWITCH • TAPE EDGE SENSOR • COPIER PAPER SENSOR 3 4 2 1

Contextual Info: MARKTECH INTERNATIONAL IflE D • 57^55 G Q Q G 4 5 M fl ■ REFLECTIVE SWITCH MTRS9030 INFRARED LED & PHOTO DARLINGTON TRANSISTOR APPLICATIONS HIGH SENSITIVE OPTICALLY REFLECTIVE SENSOR . OPTICAL SW ITCH . TAPE EDGE SENSOR 3 . COPIER PAPER SENSOR 4 2 1 FEATURES

Contextual Info: IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% λ=1000 nm , back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on

S11500-1007

Abstract: CCD area sensor 2.2 black white
Contextual Info: IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% λ=1000 nm , back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on the

CCD area sensor 2.2 black white

Abstract: mems Infrared light source
Contextual Info: IR-enhanced CCD area image sensor S11500-1007 Enhanced near infrared sensitivity: QE=40% λ=1000 nm , back-thinned FFT-CCD The S11500-1007 is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on

MTSS10050

Abstract: T-14
Contextual Info: MARKTECH INTERNATIONAL SLOTTED SWITCH IflE D S7Tìt.SS G G Q 0 M 4 4 S MTSS10050 INFRARED LED+ PHOTOIC APPLICATIONS • T IM IN G D ETECTION FOR PR IN TER S, TY P E W R IT E R S AND FACSIMILE FEATURES • Optical switch edge sensor. • Positioning and rotation sensor.

Contextual Info: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and

Contextual Info: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and

S7171-0909

Abstract: S8844-0909
Contextual Info: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and

Contextual Info: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and

Contextual Info: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and

C1019

Abstract: C1018 C1022 Quality Technologies C1018 5V C1017 C1020 C1023 photo darlington sensor reflective photo sensor
Contextual Info: ÖUALITY TECHNOLOGIE S CORP S7E » • 74t.tflSl QG03bll S ■ I QUALITY TECHNOLOGIES REFLECTIVE OBJECT SENSOR MSA7 OLD PART NO.— MCA7 PACKAGE DIMENSIONS DESCRIPTION PIN 1 IDENTIFICATION The M SA7 optoisolator consists of an infrared emitting diode and a silicon planar photodarlington. The on-axis

Contextual Info: INFRARED LED MARKTECH INTERNATIONAL lflE D MTE2010 STTTtSS G00G3T3 3 + 5 » 0.2281 MAX. 44.7 +0.1 -0.1S (0.185 +0 004 •0.005 APPLICATIONS • OPTICAL SWITCH • TAPE, CARD READER • AUTOMOBILE POSITION SENSOR • PHOTO ISOLATOR FEATURES 2»+0.45 (0.018)

Contextual Info: MARKTECH INTERNATIONAL IflE D S7TìbSS 000QM51 4 SLOTTED SWITCH MTSS8040 INFRARED LED+PHOTO TRANSISTOR _ii •“ • i APPLICATIONS ÍJQ • OPTICAL SWITCH • SHAFT POSITION AND VELOCITY SENSOR 1. 2. 3. 4. FEATURES • Both chips face each other across a 0.118 inch air gap.

MTD6010A

Abstract: MTD6140 MTE2010
Contextual Info: INFRARED LED MARKTECH INTERNATIONAL lflE D MTE2010 S7TTt.SS G 0 0 G 3 T 3 3 «8.» 0.22» MAX. 44.7 +0.1 -0.1S (0.185 +0 004 •0.005) APPLICATIONS • • • • OPTICAL SWITCH TAPE, CARD READER AUTOMOBILE POSITION SENSOR PHOTO ISOLATOR FEATURES 2»+0.45 (0.018)

Contextual Info: marktech lflE D international 57^55 000035=1 1 INFRARED LED MTE2050 ' T - m ’-ii APPLICATIONS FEATURES • OPTICAL SWITCH • Output spectrally compatible with silicon sensor MTD6100. • High radiant power. • High radiant Intensity. MAXIMUM RATINGS [Ta 2,5°C

Contextual Info: MARKTECH INTERNATIONAL SLOTTED SWITCH IflE D S7Tìt.SS G G Q 0 M 4 4 S MTSS10050 INFRARED LED+ PHOTOIC APPLICATIONS • T IM IN G D E T E C T IO N F O R P R IN T E R S , T Y P E W R IT E R S A N D F A C S IM IL E FEATURES • Optical switch ed ge sensor. • Positioning and rotation sensor.

Contextual Info: STTTbSS 0G0G424 T SLOTTED SWITCH 1ÛE D MARKTECH INTERNATIONAL MTSS8050 INFRARED LED+PHOTO TRANSISTOR • R s I J- APPLICATIONS •J t — • OPTICAL SWITCH • SHAFT POSITION AND VELOCITY SENSOR t • L l i J — -, , ■ FEATURES " TTp j RATING UNIT Forward Current

Contextual Info: GaAs Infrared E m itter TLN105B A p p lica tio n s • Remote Control System ' Smoke Sensor • Optical Switch Featu res • High Radiant Intensity : lE = 20mW / sr TYP. • Wide Radiation Pattern • Capable of Pulse Operation • Spectrally Com patible with TPS703 PIN Photo Diode

MTD6100

Abstract: MTE2050
Contextual Info: marktech international 1SE D 57^ 55 □ Q0D3flcl 1 INFRARED LED MTE2050 T U l ’- i i APPLICATIONS FEATURES • OPTIC A L SW ITCH • Output spectrally compatible with silicon sensor M T D 6100. • High radiant power. • High radiant Intensity. MAXIMUM RATINGS [Ta = 25°C

Contextual Info: REFLECTIVE OBJECT SENSOR OPTOELECTRONICS OPB7Q6A/B/C PACKAGE DIMENSIONS — OPTICAL CENTERLINE — .083 2.11 - .240 (6.10) L — .173(4.39) P E S d H E IIU N The OPB706A/B/C reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic

3 mm slotted optical switch

Abstract: MTSS12000 110A01
Contextual Info: MARKTECH INTERNATIONAL MTSS12000 SLOTTED SWITCH 1ÖE D ST^bSS GQ0Q447 Q T-41-71 INFRARED LED+ PHOTO IC APPLICATIONS • T IM IN G DETECTION FO R PR IN TER S, TY P E W R IT ER S A N D FACSIMILE FEATURES • Optical switch edge sensor. • W ide detection width: 5mm.