INFRARED LIGHT SENSOR Search Results

Contextual Info: Infrared light emitting diode, side-view type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in side emission. High output with 1.5 lens. 2.54 ± 0.1 Dimensions Unit : mm 1.0 Applications Light source for sensors 1.9 Features

Contextual Info: SIR-56ST3F Sensors Infrared light emitting diode, top view type SIR-56ST3F The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household

Contextual Info: Panasonic Infrared Light Emitting Diodes LN159 GaAs Bi-directional Infrared Light Emitting Diode For light source of VCR VHS System • Features • • • • • Two-way directivity High-power output, high-efficiency : PQ = 1.8 mW (min.) Small resin package

Contextual Info: Panasonic Infrared Light Emitting Diodes LN59, LN59L GaAs Bi-directional Infrared Light Emitting Diodes For light source of VCR VHS System • Features • • • • • Two-way directivity High-power output, high-efficiency : PQ = 1.8 mW (min.) Small resin package

Contextual Info: Sensors Infrared light emitting diode, side-view mold type SIM-20ST The SIM-20ST is a GaAs infrared light emitting diode housed in clear plastic. Side emission with a $ 1.85 mm lens and a 950 nm spectrum suitable for silicon detectors make it an ideal light source for sensors. It is particularly suited

Contextual Info: SIM-20ST Sensors Infrared light emitting diode, side-view type SIM-012SB The SIM-20ST is a GaAs infrared light emitting diode with a side-facing detector. High output with φ1.85 lens. zDimensions Unit : mm 3.2±0.1 Notes: 1. Tolerances are ±0.2 unless

Contextual Info: Panasonic Infrared Light Emitting Diodes LN59, LN59L G aAs Bi-directional Infrared Light Emitting Diodes For light source of VCR VHS System • Features • • • • • Two-way directivity High-power output, high-efficiency : PQ = 1.8 mW (min.) Small resin package

Infrared Emitting Diode

Abstract: LN159 LN59
Contextual Info: Panasonic Infrared Light Emitting Diodes LN159 G aAs Bi-directional Infrared Light Emitting Diode For light source of VCR VHS System • Features • Two-way directivity • H igh-pow er output, high-efficiency : P Q = 1.8 mW (min.) • Small resin package

Contextual Info: Sensors Infrared light emitting diode, side-view mold type SIM-22ST The SIM-22ST is a GaAs infrared light emitting diode housed in clear plastic. Side emission with a <j> 1.5 mm lens and a 950 nm spectrum suitable for silicon detectors make it an ideal light source for sensors. It is particularly suited

Infrared Emitting Diode

Abstract: LN59 LN59L
Contextual Info: Panasonic Infrared Light Emitting Diodes LN59, LN59L G aAs Bi-directional Infrared Light Emitting Diodes For light source of VCR VHS System • Features • Two-way directivity • H igh-pow er output, high-efficiency : P Q = 1.8 mW (min.) • Small resin package

Contextual Info: Infrared Light Emitting Diodes LNA2701L LN159 GaAs Infrared Light Emitting Diode VTR tape and sensor Unit: mm 8° 2.8±0.2 Forward current IF Pulse forward current * IFP Power dissipation PD Operating ambient temperature Topr Storage temperature Tstg Note) *: f = 100 Hz, Duty Cycle = 0.1%

Contextual Info: SIM-20SB GaAs infrared light-emitting diode This infrared GaAs LED is housed in a compact, transparent plastic housing. It has a 1.85 mm diameter lens and radiates at a wavelength of 950 nm making it suitable for silicon light detectors. Matched with the RPM-20PB light

Contextual Info: GaAs INFRARED LIGHT EMITTING DIODE SE308 FEATURES_ DESCRIPTION_ • SMALL SIZE PLASTIC MOLDED PACKAGE • HIGH OUTPUT POWER The SE308 is a GaAs Gallium Arsenide Infrared Light Emitting Diode which is mounted on the lead frames and

VCNL4

Abstract: VCNL4020 VCNL4020-GS08 VCNL4020-GS18 IR PHOTO DIODE
Contextual Info: VCNL4020 www.vishay.com Vishay Semiconductors Fully Integrated Proximity and Ambient Light Sensor with Infrared Emitter, I2C Interface, and Interrupt Function FEATURES • Package type: surface mount • Dimensions L x W x H in mm : 4.90 x 2.40 x 0.83 • Integrated infrared emitter, ambient light sensor,

VCNL4

Abstract: VCNL4010 gray code 2-bit down counter VCNL4010-GS08
Contextual Info: VCNL4010 www.vishay.com Vishay Semiconductors Fully Integrated Proximity and Ambient Light Sensor with Infrared Emitter, I2C Interface, and Interrupt Function FEATURES • Package type: surface mount • Dimensions L x W x H in mm : 3.95 x 3.95 x 0.75 • Integrated infrared emitter, ambient light sensor,

Contextual Info: VCNL4020 www.vishay.com Vishay Semiconductors Fully Integrated Proximity and Ambient Light Sensor with Infrared Emitter, I2C Interface, and Interrupt Function FEATURES • Package type: surface mount • Dimensions L x W x H in mm : 4.90 x 2.40 x 0.83 • Integrated infrared emitter, ambient light sensor,

Contextual Info: VCNL4020 www.vishay.com Vishay Semiconductors Fully Integrated Proximity and Ambient Light Sensor with Infrared Emitter, I2C Interface, and Interrupt Function FEATURES • Package type: surface mount • Dimensions L x W x H in mm : 4.90 x 2.40 x 0.83 • Integrated infrared emitter, ambient light sensor,

Contextual Info: GaAs INFRARED LIGHT EMITTING DIODE SE FEATURES DESCRIPTION_ • HIGH OUTPUT POWER Ie = 10 mW/sr TYP @ If = 50 mA • HIGH SPEED SWITCHING ton, toff = 1 JOSTYP • SPECTRALLY MATCHED TO SILICON SENSORS = 940 nm TYP The SE310 is a GaAs Gallium Arsenide Infrared Light

Contextual Info: Sensors Infrared light emitting diode, cast type SIR-56ST3F The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950 nm spectrum suitable for silicon detectors. Low cost and a wide radiation angle make it an ideal

Contextual Info: Sensors Infrared light emitting diode, cast type SIR-34ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950 nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation

Contextual Info: SIR-563ST3F Sensors Infrared light emitting diode, top view type SIR-563ST3F The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for

Contextual Info: Sensors Infrared light emitting diode, cast type SIR-341 ST3F The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950 mm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation

SIR-341ST3F

Contextual Info: SIR-341ST3F Sensors Infrared light emitting diode, top view type SIR-341ST3F The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide

SIR-320ST3F

Contextual Info: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,