INFRARED EMITTING DIODE PINK Search Results

Contextual Info: Technical Data Sheet 1.6mm Side Looking Infrared Emitting Diode IR958-8P █ Features ․Low forward voltage ․Peak wavelength λp=950nm ․High reliability █ Descriptions The IR958-8P is a GaAs infrared emitting diode. The miniature side-facing device is a chip that

MIE-406A4U

Contextual Info: AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE Description MIE-406A4U Package Dimensions The MIE-406A4U is an infrared emitting diodes in GaAs technology with AlGaAs window coating molded in plastic pink transparent package. Unit : mm inches

MIE-406A2U

Abstract: TO46 package
Contextual Info: AlGaAs/GaAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE Description MIE-406A2U Package Dimensions The MIE-406A2U is an infrared emitting diodes in GaAs technology with AlGaAs window coating molded in plastic pink transparent package. Unit : mm inches

MIE-556A4U

Abstract: LTd1117 Infrared Emitting Diode pink
Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-556A4U Package Dimensions φ5.05 .200 The MIE-556A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

MIE-546A4U

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-546A4U Package Dimensions φ5.05 .200 The MIE-546A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

MIE-516A4U

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-516A4U Package Dimensions φ5.05 .200 The MIE-516A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

MIE-546A2U

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-546A2U Package Dimensions φ5.05 .200 The MIE-546A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

840 opto

Abstract: MIE-526A2U
Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-526A2U Package Dimensions φ5.05 .200 The MIE-526A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

MIE-556A2U

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-556A2U Package Dimensions φ5.05 .200 The MIE-556A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

MIE-536A2U

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536A2U Package Dimensions φ5.05 .200 The MIE-536A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

MIE-536A4U

Abstract: LTd1117
Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-536A4U Package Dimensions φ5.05 .200 The MIE-536A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

MIE-516A2U

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-516A2U Package Dimensions φ5.05 .200 The MIE-516A2U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

MIE-526A4U

Contextual Info: AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description MIE-526A4U Package Dimensions φ5.05 .200 The MIE-526A4U is infrared emitting diodes in GaAs technology with AlGaAs window coating molded in pastel pink transparent package. Unite: mm ( inches )

Contextual Info: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome

Contextual Info: TSMF1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero TSMF1000 Description TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology DH molded in clear SMD package with dome

Photointerrupter

Contextual Info: TSML1000/1020/1030/1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage

S 1040 smd

Abstract: TSML1020 TEMT1000 TSML1000 TSML1030 TSML1040
Contextual Info: TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage

S 1040 smd

Abstract: 1030 mhz TSML1020 TEMT1000 TSML1000 TSML1030 TSML1040
Contextual Info: TSML1000 / 1020 / 1030 / 1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage

TSML1020

Abstract: TEMT1000 TSML1000 TSML1030 TSML1040
Contextual Info: TSML1000/1020/1030/1040 Vishay Semiconductors High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs TSML1000 Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage

Contextual Info: Technical Data Sheet Top Infrared LED SIR93-21C/TR8 Features ˙Package in 12mm tape on 7” diameter reels. ˙Peak wavelength λp=875nm. ˙Low forward voltage. ˙Compatible with infrared and vapor phase reflow solder process. Descriptions ˙SIR93-21C/TR8 is an infrared emitting diode in miniature SMD

Contextual Info: Technical Data Sheet Top Infrared LED SIR67-21C/L107/TR8 Features ˙Package in 8mm tape on 7” diameter reels. ˙Peak wavelength λp=880nm. ˙Low forward voltage. ˙Compatible with infrared and vapor phase reflow solder process. Descriptions ˙SIR67-21C/L107/TR8 is an infrared emitting diode in miniature SMD

l109

Contextual Info: Technical Data Sheet Top Infrared LED SIR93-21C/L109/TR8 Features ˙Package in 12mm tape on 7” diameter reels. ˙Peak wavelength λp=880nm. ˙Low forward voltage. ˙Compatible with infrared and vapor phase reflow solder process. Descriptions ˙SIR93-21C/L109/TR8 is an infrared emitting diode in miniature SMD

Contextual Info: Technical Data Sheet 1.6mm Side Looking Infrared Emitting Diode IR958-8P Features Low forward voltage Peak wavelength p=950nm High reliability Pb free The product itself will remain within RoHS compliant version. Descriptions The IR958-8P is a GaAs infrared

IR LED 810 nm

Contextual Info: Technical Data Sheet Reverse Package Infrared LED HIR23-21C/L80/TR8 Features ˙Small double-end package ˙High reliability ˙Low forward voltage ˙Good spectral matching to Si photodetector Descriptions HIR23-21C/L80/TR8 is an infrared emitting diode in miniature SMD