INFRARED DIODE Search Results

Contextual Info: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure

Contextual Info: Invisible optoelectronics device Infrared Diode Photo Diode Photo Transistor High power Infrared diode Formore,pleasevisithttp://www.betlux.com Infrared Emitters Part Number Φe （Mw Material BL-LS3528A0S1IRAC BL-LS3528A0S1IRAB BL-LS3528A0S1IRBC BL-LS3528A0S1IRBB

Contextual Info: Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm 3.0±0.3 For optical control systems Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm

LN189S

Contextual Info: Infrared Light Emitting Diodes LN189S GaAlAs Infrared Light Emitting Diode Unit : mm 1 Light source for distance measuring systems 0.4±0.1 Infrared light emission close to monochromatic light : λP = 880 nm typ. Narrow direcivity using spherical lenses; works well with optical

Contextual Info: Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems Unit: mm 3.75±0.3 • Features 12.5 min. • High-power output, high-efficiency: PO = 3.5 mW typ. • Infrared light emission close to monochromatic light:

RELE 12V

Abstract: infrared circuit diagram infrared diode transmitter Infrared photodiode infrared diode BP104 application note BPW 43 BPW43 infrared BP104
Contextual Info: Infrared Devices telecontrolli IRT1 Infrared Pulse Transmitter General description The IRT1 is an hybrid circuit that allows to realize an infrared barrier when utilized with an infrared pulse detector IRD1 . It shows stable electric characteristics thanks to the

infrared detectors

Abstract: Infrared Emitting Diode LNA2601L
Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2601L GaAs Infrared Light Emitting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm

Contextual Info: SIEMENS SFH400 SFH401 SFH402 GaAs INFRARED EMITTER • Half Angle - SFH400, ±6° - SFH401, ±15° - SFH402, ±40° • GaAs Infrared Emitting Diode, Fabricated in a Liquid Phase Epitaxy Process • Emits Radiation in Near Infrared Range • Cathode Electrically Connected to

AP 1100 R1

Abstract: LN58
Contextual Info: Panasonic Infrared Light Emitting Diodes LN58 GaAs Infrared Light Emitting Diode For optical control systems • Features High-power output, high-efficiency : P0 = 3.5 mW typ. « Light emitting spectrum suited for silicon photodetectors a Infrared light emission close to monochromatic light :

IR42-21C

Contextual Info: Technical Data Sheet 1.8mm Round Subminiature Infrared LED IR42-21C Features ․Compatible with infrared and vapor phase reflow solder process. ․Low forward voltage ․Good spectral matching to Si photodetector ․Pb free Descriptions ․IR42-21C is an infrared emitting diode in miniature SMD

Contextual Info: Panasonic Infrared Light Emitting Diodes LN162S G aAs Infrared Light Em itting Diode For optical control systems • Features • High-power output, high-efficiency : PQ = 3.5 mW typ. • Infrared light emission close to monochromatic light : A,P = 950 nm (typ.)

OF LED 55B

Abstract: LED55B LED55C LED56 LED56F 55BF ge 55b NMTC LED55BF LED55CF
Contextual Info: Optoelectronic Specifications Infrared Emitter LED55B, LED55C,LED56, LED55BF, LED55CF, LED56F Gallium Arsenide Infrared-Em itting Diode The GE Solid State LED55B-LED55C-LED56 Series are gallium arsenide, light em itting diodes which emit non-coherent, infrared energy with a peak wave length of

side view infrared diode sharp

Abstract: GP2Y0A60 GP2Y10 GP2Y0A60SZ0F/GP2Y0A60SZLF GP2Y0AF15
Contextual Info: INFRARED EMITTING DIODE LINEUP / INFRARED EMITTING DIODES OPTO • Infrared Emitting Diode Lineup Type Single-end lead Side view type Surface mount type Package Half intensity angle Features Epoxy resin with lens Epoxy resin with lens/ leadless General purpose/Narrow beam angle

Contextual Info: Order this document by MC13173/D MC13173 Advance Information Infrared Integrated Transceiver IC INFRARED TRANSCEIVER The MC13173 is a low power infrared integrated system IRIS . It is a unique blend of a split IF wideband FM receiver and a specialized infrared

LN162S

Contextual Info: Panasonic Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P 0 = 3.5 mW typ. • Infrared light emission close to m onochromatic light : A,P = 950 nm (typ.)

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2601L G aAs Infrared Light Em itting Diode For optical control systems • Features • • • • High-power output, high-efficiency Light emitting spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : XP = 950 nm

Contextual Info: RPM871 Photo Link Module IrDA Infrared communication Module RPM871 RPM871 is an infrared communication module for IrDA Ver. 1.2 Low Power . The infrared LED, PIN photo diode, waveform shaping LSI are all integrated into a single package. This module is designed with power down function and

Contextual Info: Technical Data Sheet Top Infrared LED SIR93-21C/TR8 Features ˙Package in 12mm tape on 7” diameter reels. ˙Peak wavelength λp=875nm. ˙Low forward voltage. ˙Compatible with infrared and vapor phase reflow solder process. Descriptions ˙SIR93-21C/TR8 is an infrared emitting diode in miniature SMD

Contextual Info: Panasonic Infrared Light Emitting Diodes LN162S G aAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 3.5 m W typ. • Infrared light em ission close to monochrom atic light : A,P = 950 nm (typ.)

EN60825-1

Abstract: IEC825-1 RPM872
Contextual Info: RPM872 Photo Link Module IrDA infrared communication module RPM872 RPM872 is an infrared communication module for IrDA Ver. 1.2 Low Power . The infrared LED, PIN photo diode, and waveform shaping LSI are all integrated into one single package. This module is designed for low power consumption.

ltw-m140

Abstract: LTW-193ZDS5 piranha led 0.5w LTOE-15D11 ltst-c235kgkrkt LTW-C282DS5 LTST-T670TBL LTST-S326 LTST-C281KRKT LTR-301 002
Contextual Info: 002 003 Alphanumerical Index 012 Application Showcase 021 Quality & Reliability Product SMD LED 022 Low Power SIR 115Kb/s Infrared Transceiver Standard and Low Power FIR 4Mb/s Infrared Transceiver SIR 115kb/s Infrared + Remote Control Transceiver FIR 4Mb/s Infrared + Remote Control Transceiver

Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 G aAs Infrared Light Emitting Diode Unit : mm For optical control systems • Features • High-power output, high-efficiency : PQ = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to monochromatic light :

Contextual Info: RPM872 Photo Link Module IrDA infrared communication module RPM872 RPM872 is an infrared communication module for IrDA Ver. 1.2 Low Power . The infrared LED, PIN photo diode, and waveform shaping LSI are all integrated into one single package. This module is designed for low power consumption.

V30K20

Abstract: L440 diode GaAs 1000 nm Infrared Emitting Diode Infrared Emitting Diode LN54 LA440
Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to m onochromatic light :