INFRARED 701 Search Results
INFRARED 701 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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LUSB3193002 |
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Lockable USB 3.0, Right Angle, with locking latch, For IR Reflow Pin in Paste | |||
TIR1000IPWR |
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Standalone IrDA Encoder & Decoder 8-TSSOP -40 to 85 |
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OPT3004DNPR |
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Digital ambient light sensor (ALS) with increased angular IR rejection 6-USON -40 to 85 |
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LMP91050MMX/NOPB |
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Configurable AFE for Nondispersive Infrared (NDIR) Sensing Applications 10-VSSOP -40 to 105 |
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TIR1000PSR |
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Standalone IrDA Encoder & Decoder 8-SO 0 to 70 |
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INFRARED 701 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: •TOI TOX 9007 P-N Gallium Arsenide Infrared-Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9007 is a 940 nm emitter designed for short distance point to point data transmission and position sensing. Designed to emit near-infrared radiation |
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MIL-S-19500, 9007TX 12J53 9L53PL375) 27PL36S) | |
Contextual Info: TIES27 Gallium Arsenide Infrared-Emitting Diodes Texas Optoelectronics, Inc. DESIGNED TO EMIT NEAR-INFRARED RADIANT ENERGY WHEN FORWARD BIASED • High Output Power . . . 15 mW Min at 25°C • Spectrally Matched to Silicon Sensors . .Peak Emission at 930 nm |
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TIES27 | |
Contextual Info: «701 T0X 9005 P-N Gallium Arsenide Infrared-Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TOX 9005 is a 940 nm emitter designed for short distance point to point data transmission and position sensing. Designed to emit near-infrared radiation |
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MIL-S-19500, OX9005TX | |
TL190Contextual Info: TOX 9004 Gallium Aluminum Arsenide Infrared-Emitting Diode DESCRIPTION FEATURES The TOX 9004 is a GaAIAs emitter designed to emit near-infrared radiation when forward biased. • • • • • Output spectrally compatible with silicon sensors Typical applications include card readers, |
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MIL-S-19500, OX9004TX tL190) PL335) TL190 | |
Contextual Info: Texas Optoelectronics, Inc. TIES13, TIES13A Gallium Arsenide Infrared-Emitting Diodes DESIGNED TO EMIT NEAR-INFRARED RADIANT ENERGY WHEN FORWARD BIASED • High Output Efficiency • Hemispherically Shaped Chips with Diameter of 36 Mils • Spectrally Matched to Silicon Sensors . . . Peak Emission at 9 30 nm |
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TIES13, TIES13A S70L235) | |
2SK3666
Abstract: marking jk ITR00633 ITR00634 ITR00636
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2SK3666 EN8158A 2SK3666 marking jk ITR00633 ITR00634 ITR00636 | |
Contextual Info: TOX 9111/TOX 911 Silicon Photodiodes *701 Texas Optoelectronics, Inc. DESCRIPTION Formerly S37/S38 FEATURES The TOX 9111 and TOX 9112 large area p-silicon photodiodes are used in many laser and infrared systems. These detectors feature low noise and high responsivity. Both use guard ring |
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9111/TOX S37/S38 | |
Contextual Info: 2SK3666 Ordering number : EN8158B SANYO Semiconductors DATA SHEET N-Channel Junctin Silicon FET 2SK3666 Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Applications • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications |
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EN8158B 2SK3666 013A-011 | |
Contextual Info: Ordering number : EN8158C 2SK3666 N-Channel JFET http://onsemi.com 30V, 0.6 to 3.0mA, 6.5mS, CP Applications • Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications Features • Small IGSS • Small Ciss Specifications |
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EN8158C 2SK3666 | |
ir132
Abstract: ir113 ir102b IR123 agilent d041 ir133 HSDL-7000 MCP2120 MCP2122 MCP2140
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MCP2122 HSDL-7000 16XCLK D-85737 NL-5152 DS21894A-page ir132 ir113 ir102b IR123 agilent d041 ir133 HSDL-7000 MCP2120 MCP2122 MCP2140 | |
lexan 121 21051 color
Abstract: lexan IR lexan IR 920a 31142 31142 lexan 940a lexan 9034 makrolon 7881 lexan IR 121 31142 makrolon IR black lexan
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IRMS6100/IRMT6100 IRMS6100/IRMT6100 1-888-Infineon lexan 121 21051 color lexan IR lexan IR 920a 31142 31142 lexan 940a lexan 9034 makrolon 7881 lexan IR 121 31142 makrolon IR black lexan | |
lexan 121 21051 color
Abstract: lexan IR lexan IR 121 31142 lexan 9034 makrolon 7881 lexan9034 lexan IR 920a 31142 lexan IR 121 makrolon IR black lexan 121
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IRMS6100/IRMT6100 IRMS6100/IRMT6100 lexan 121 21051 color lexan IR lexan IR 121 31142 lexan 9034 makrolon 7881 lexan9034 lexan IR 920a 31142 lexan IR 121 makrolon IR black lexan 121 | |
world elctronic site
Abstract: 2.3 pitch 9 pin connector for laptop battery 052 marking code digital transistor ROHM 11.0592mhz crystal oscillator 2 pin crystal oscillator 11.0592 mhz agilent d041 agilent optical encoder IR112 irobex xtal 11.0592 2 pin
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MCP2150 D-81739 D-82152 DS21655A-page world elctronic site 2.3 pitch 9 pin connector for laptop battery 052 marking code digital transistor ROHM 11.0592mhz crystal oscillator 2 pin crystal oscillator 11.0592 mhz agilent d041 agilent optical encoder IR112 irobex xtal 11.0592 2 pin | |
Contextual Info: Catalog 1307612 Revised 7-01 AMPINNERGY Wire-To-Board Connectors Right-Angle Receptacle Product Facts • Withstands vapor phase, Infrared and wave soldering processes ■ .040 [1.01] minimum standoff to PCB ■ Receptacles polarized to plug ■ Contact centerline |
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makrolon IR black
Abstract: lexan 121 21051 color 31142 lexan IR lexan 121 lexan 121 21051 lexan OSRAM TRANSCEIVER stamford voltage regulator TAN15
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IRMS6118/IRMT6118 IRMS6118/IRMT6118 1-888-Infineon makrolon IR black lexan 121 21051 color 31142 lexan IR lexan 121 lexan 121 21051 lexan OSRAM TRANSCEIVER stamford voltage regulator TAN15 | |
lexan 121 21051 color
Abstract: lexan 121 21051 lexan 9034 makrolon IR black lexan 21051 LEXAN 141 lexan 940a 2405O 31142 lexan 121
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IRMS6118/IRMT6118 IRMS6118/IRMT6118 1-888-Infineon lexan 121 21051 color lexan 121 21051 lexan 9034 makrolon IR black lexan 21051 LEXAN 141 lexan 940a 2405O 31142 lexan 121 | |
Contextual Info: A im Standard Edge .050 Series Card Edge Connectors Catalog 1307612 Revised 7-01 Product Facts PCBand Wire Connectors • High density .050 [1.27] centerline spacing of contacts ■ Easy mating of high-circuit count daughter boards ■ Compatible with infrared |
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E28476 | |
Contextual Info: Catalog 1307612 AMP AMPINNERGY Wire-To-Board Connectors Revised 7-01 V ertical R eceptacle Product Facts • Withstands vapor phase, infrared and wave soldering processes ■ .040 [1.01] minimum standoff to PCB ■ Polarized to PCB; to plug ■ Contact centerline |
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lexan 121 21051 color
Abstract: lexan 9034 lexan 21051 makrolon IR black 31142 lexan IR LEXAN lexan 121 lexan IR 920a 31142 makrolon
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IRMS6400/IRMT6400 IRMS6400/IRMT6400, 1-888-Infineon lexan 121 21051 color lexan 9034 lexan 21051 makrolon IR black 31142 lexan IR LEXAN lexan 121 lexan IR 920a 31142 makrolon | |
FET packing marking MtContextual Info: 2SK545 Ordering number : EN1789C SANYO Semiconductors DATA SHEET 2SK545 N-Channel Junction Silicon FET Impedance Converter Applications Applications • • Impedance converter applications Infrared sensor Features • • • Small IGSS Small Ciss Ultrasmall package permitting 2SK545-applied sets to be compact |
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EN1789C 2SK545 2SK545-applied 013A-011 FET packing marking Mt | |
Contextual Info: Catalog 1307612 MTA-100 Headers Revised 7-01 Polarized and Friction Lock Surface Mount Headers — Straight For use with Infrared Reflow Process Material and Finish: Maximum Temperature Rating: 235°C Housing — UL94V-0 rated, thermoplastic, black Posts — Copper alloy, tin plated. |
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MTA-100 UL94V-0 UL94V-0, | |
Contextual Info: •701 TIED59 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES Isolated Case fo r Shielding Useful from Audio to Microwave Frequencies Typical Photocurrent Gain > 600 Active Area of 4.5 X 10"3 cm2 Diameter = 30 |
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TIED59 0-13W/V TIED59 9J3PL375) IL235) | |
TIES16AContextual Info: «701 TIES16A Gallium Arsenide Infrared-Emitting Diode Texas Optoelectronics, Inc. DESIGNED TO EM IT NEAR-IN FRARED R A D IEN T ENERGY WHEN FORW ARD BIASED • High Output Power . . . 100 m W Min at 25 °C • Hemispherically Shaped 72-Mil-Diameter Chip • |
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TIES16A 72-Mil-Diameter 1L360 TIES16A | |
TL235
Abstract: 905-138
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tL235) TL235 905-138 |