INFINEON IGBT3 1200V Search Results

FZ1200R33KF2C

Abstract: igbt 3.3kv planar busbar design HIGH VOLTAGE DIODE 3.3kv FZ1500R33HE3 FZ1500R33HL3 the calculation of the power dissipation for the IGBT i300a IGBT FZ1200 BUSBAR calculation
Contextual Info: High Power IGBT modules with improved mechanical performance and advanced 3.3kV IGBT3 chip technology Th. Schütze1 , J. Biermann1), R. Spanke 1), M. Pfaffenlehner2) 1 2 Infineon Technologies AG, Max-Planck-Straße, D-59581 Warstein, Germany Infineon Technologies AG, Am Campeon 1 - 12, D-85579 Neubiberg, Germany

infineon power cycling igbt3

Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Contextual Info: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,

AN2008-01

Abstract: IGBT2 IGBT1 infineon
Contextual Info: Application Note, V1.0, 2008 AN2008-01 Technical Information IGBT Modules Definition and use of junction temperature values Industrial Power We Listen to Your Comments Any information within this document that you feel is wrong, Your feedback will help us to continuously improve the

3rd Generation of 1200V IGBT Modules

Abstract: transorb 200v transorb diode igbt failure infineon technologies formerly siemens siemens igbt infineon igbt3 1200v IGBT infineon IGBT structure infineon igbt3 ohm
Contextual Info: 3rd Generation of 1200V IGBT Modules M. Hierholzer, Th. Laska, M. Münzer, F. Pfirsch, C. Schäffer, Th. Schmidt IGBT-modules are the most frequently used semiconductors for power applications. The markets demand for higher power integration in one module is limited by the chip losses and the housings

SGP07N120

Abstract: SIGC16T120CS infineon igbt3 1200v
Contextual Info: Preliminary SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CS 1200V This chip is used for: • SGP07N120

hybrid vehicle power inverter

Abstract: infineon igbt reliability FS400R07A1E3 INVERTER 20kW infineon power cycling igbt3 FS400R07 infineon power cycling 3 phase IGBT inverter design Fs300R07A1E3 FS200R07
Contextual Info: Product Brief HybridPACK TM1 Power Module for Hybrid Electric Vehicles INFINEON ’s HybridPACK TM1 is a fully automotive qualified power module designed for Hybrid Electric Vehicle HEV applications for a power range up to 20KW–30KW. Designed for a 150°C

Contextual Info: Power Modules Economical IGBT based NPC inverter modules with baseplate Vincotech is proud to announce the expansion of its Neutral Point Clamped flow 2 housing 17 x 108 x 47mm NPC inverter flow 2 module family. The new NPC modules developed with IGBT cover a current range from 200A to 300A in a flow 2 housing with

l 7251 3.1

Abstract: l 7251 7251 SGP02N120 SIGC06T120CS
Contextual Info: SIGC06T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC06T120CS 1200V This chip is used for: • SGP02N120 Applications:

Contextual Info: SIGC12T120E IGBT3 Power Chip Features: • 1200V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules C Applications:  drives G Chip Type

Contextual Info: SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CS 1200V This chip is used for: • SGP07N120 Applications:

l 7251 3.1

Abstract: l 7251 A001 SGP02N120 SIGC06T120CS
Contextual Info: Preliminary SIGC06T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC06T120CS 1200V This chip is used for: • SGP02N120

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

Contextual Info: SIGC32T120R3E IGBT3 Power Chip Features: • 1200V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules C Applications:  drives G

Contextual Info: SIGC109T120R3E IGBT3 Power Chip Features: • 1200V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling Chip Type SIGC109T120R3E VCE IC 1200V 100A This chip is used for:  power modules

Contextual Info: SIGC41T120R3LE IGBT3 Power Chip Features: • 1200V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules C Applications:  drives

10-FZ06NIA075SA-P926F33

Contextual Info: Power Modules New IGBT based NPC inverter modules Vincotech is proud to announce the expansion of its Neutral Point Clamped flow 0 housing 12 x 66 x 32mm inverter NPC flow 0 module family. The new NPC modules developed with IGBTs cover a current range from 30A to 75A in a flow 0 housing.

Contextual Info: SIGC158T120R3LE IGBT3 Chip Features: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type VCE IC SIGC158T120R3LE 1200V 150A This chip is used for: • power modules

Contextual Info: SIGC32T120R3LE IGBT3 Power Chip Features: • 1200V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules C Applications:  drives

Contextual Info: SIGC20T120E IGBT3 Power Chip Features: • 1200V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules C Applications:  drives G Chip Type

soft solder die bonding

Abstract: igbt "sawn on foil" SMPS IC 2003 SGP07N120 SIGC16T120CS infineon igbt3 1200v
Contextual Info: SIGC16T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC16T120CS 1200V This chip is used for: • SGP07N120 Applications:

igbt infineon

Abstract: Easy-750 The field stop IGBT FS IGBT infineon igbt reliability IGBT inverter design by microcontroller A-9500 infineon igbt die 1200V igbt3 igbt2 infineon infineon igbt3 rg easypim igbt
Contextual Info: 600 V IGBT³-Technology in New Low Cost Modules for Consumer Drives Applications P. Kanschat1, T. Stolze1, T. Passe1, H. Rüthing2, F. Umbach2, O. Hellmund3 1 eupec GmbH, Max-Planck-Str. 5, D-59581 Warstein, Germany Infineon Technologies AG, St. Martin-Str. 76, D-81541 München, Germany

l 7251 3.1

Contextual Info: SIGC06T120CS IGBT Chip in NPT-technology C FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling Chip Type VCE SIGC06T120CS 1200V This chip is used for: • SGP02N120 Applications:

Contextual Info: SIGC109T120R3E IGBT3 Chip Features: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling Chip Type SIGC109T120R3E VCE IC 1200V 100A This chip is used for: • power modules

Contextual Info: SIGC20T120LE IGBT3 Power Chip Features: • 1200V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules C Applications:  drives G