INDUSTRIAL CONTROL UNIT Search Results

circuit diagram bridge transducer 4-20ma

Abstract: 4-20mA transmitter for a bridge type transducer SCADA complete notes design of a 4-20mA transmitter for a bridge type LT1049 weight transducer 4-20ma 2N6121 XTR104 XTR104AP XTR104AU
Contextual Info: XTR104 4-20mA Current Transmitter with BRIDGE EXCITATION AND LINEARIZATION FEATURES APPLICATIONS ● LESS THAN ±1% TOTAL ADJUSTED ERROR, –40°C TO +85°C ● INDUSTRIAL PROCESS CONTROL ● FACTORY AUTOMATION ● BRIDGE EXCITATION AND LINEARIZATION ● WIDE SUPPLY RANGE: 9V to 40V

Contextual Info: QOG ILC DATA DEVICE CORPORATION_ _ _ RDC-19200 MONOBRID0 SERIES 10, 12, 14, OR 16 BIT INDUSTRIAL RESOLVER TO DIGITAL CONVERTERS FEATURES CONTROL FIGURE 1. RDC-19200 B LO C K DIAGRAM M onobrid is a registered tradem ark of ILC Data Device Corporation. E-16

Contextual Info: 000 BUS-61553 ILC DATA DEVICE CORPORATION_ MIL-STD-1553 ADVANCED INTEGRATED MUX AIM HYBRID FEATURES DESCRIPTION DDC's BUS-61553 Advanced Integra­ ted Mux (AIM) Hybrid is a complete MILSTD-1553 Bus Controller (BC), Remote Terminal Unit (RTU), and Bus Monitor

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1704 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm This µPA1704 is N-Channel MOS Field Effect Transistor 8 designed for power management applications and Li-ion 5 1,2,3 ; Source

Contextual Info: DATA SHEET COMPOUND TRANSISTOR BA1A3Q on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with BN1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: 2SA1202 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1202 Power Amplifier Applications Voltage Amplifier Applications Unit: mm • Suitable for driver of 30 to 35 watts audio amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)

Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

ON1114

Abstract: CNA1012K
Contextual Info: Transmissive Photosensors Photo lnterrupters CNA1012K (ON1114) Photo lnterrupter Unit: mm For contactless SW, object detection • Overview 0.45±0.1 CNA1012K is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility

Contextual Info: SN65HVD485E DGK www.ti.com D P SLLS612A − JUNE 2004 REVISED SEPTEMBER 2005 HALFĆDUPLEX RSĆ485 TRANSCEIVER FEATURES D Bus-Pin ESD Protection Up to 15 kV D 1/2 Unit Load—Up to 64 Nodes on a Bus D Bus−Open−Failsafe Receiver D Glitch−Free Power−Up/Down Bus Inputs and

Contextual Info: HIGH-SPEED 36K 4K x 9-BIT SYNCHRONOUS PIPELINED DUAL-PORT SRAM PRELIMINARY IDT709149S In te g ra ted D e v iz e T e c h n o lo g y , l i e . FEATURES: • Architecture based on Dual-Port SRAM cells — Allows full simultaneous access from both ports • High-speed clock-to-data output times

Contextual Info: IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) F e a tu re s ♦ ♦ ♦ ♦ * High-speed access * - Military: 35/45ns (max.) - Commercial: 20/25/35/45ns (max.) Low-power operation - IDT70825S - Address based flags for buffer control

Contextual Info: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L In te g ra ted D e v iz e T e c h n o lo g y , l i e . FEATURES: • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the sam e m em ory location • H igh-speed access

sony IMX 136

Abstract: IMX6DQ6SDLSRM sony sensor imx 136 sony CMOS sensor imx 136 Sony imx 134 cmos sensor sony IMX 138 sony cmos sensor imx 123 sony cmos sensor imx 174 sony CMOS sensor imx 135 sony IMX 260
Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQIEC Rev. 2.2, 07/2013 MCIMX6QxCxxxxC MCIMX6DxCxxxxC i.MX 6Dual/6Quad Applications Processors for Industrial Products Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information

Contextual Info: Features ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location * High-speed access ♦ * * - Industrial 25ns max. - Commercial: 15/20/25/35/55ns (max.) Low-power operation - IDT70261S ♦ ♦ ♦ Active: 750mW(typ.)

Contextual Info: HIGH-SPEED 3.3V 8 K x 16 DUAL-PORT STATIC RAM IDT70V25S/L F e a tu re s * * True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access - * ♦ Commercial: 25/35/55ns max. ♦ ♦ ♦ Low-power operation - IDT70V25S

Contextual Info: 1 » i l l 1 IF V 1 F 1 1 U 1 ‘! S y P r • W 0 L HIGH-SPEED 3.3V 16K x 36 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V3569S F ea tu re s: ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location ♦ High-speed clock to data access

74FCT273CT

Contextual Info: IDT54/74FCT273T/AT/CT FAST CMOS OCTAL D FLIP-FLOP WITH MASTER RESET H h te g ia te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • • • • • The ID T54/74FC T273T/AT/C T are octal D flip-flops built using an advanced dual metal CMOS technology. The IDT54/

GS70328

Abstract: GS70328SJ-10 GS70328SJ-12 GS70328SJ-6 GS70328SJ-6I GS70328SJ-7 GS70328SJ-7I GS70328SJ-8 GS70328SJ-8I
Contextual Info: GS70328SJ/TS 32K x 8 256Kb Asynchronous SRAM SOJ, TSOP Commercial Temp Industrial Temp 6, 7, 8, 10, 12 ns 3.3 V VDD Corner VDD and VSS Features • Fast access time: 6, 7, 8, 10, 12 ns • 90/75/65/50/50 mA at max cycle rate • Single 3.3 V ± 0.3 V power supply

K6R4016V1D

Abstract: K6R4016V1D-U K6R4016V1D -ui10 44-TSOP2-400BF K6R4016 K6R4008V1D K6R4016V1D-T K6R4016V1D-J K6R4004 K6R4016V1D10
Contextual Info: PRELIMPreliminaryPPPPPPPPPINARY K6R4016V1D CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary.

K6R1016V1D

Contextual Info: for AT&T CMOS SRAM K6R1016V1D Document Title 64Kx16 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev. No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify Current modify

ua 471

Abstract: GS74104TP-10 GS74104TP-10I GS74104TP-12 GS74104TP-12I GS74104TP-15 GS74104TP-15I GS74104TP-8 GS74104TP-8I
Contextual Info: GS74104TP/J SOJ, TSOP Commercial Temp Industrial Temp 1M x 4 4Mb Asynchronous SRAM Features 8, 10, 12, 15 ns 3.3 V VDD Center VDD and VSS SOJ 1M x 4-Pin Configuraton • Fast access time: 8, 10, 12, 15 ns • CMOS low power operation: 150/125/110/90 mA at

UBL 025

Abstract: IDT709269 IDT709279 CY7C09269-12AI CY7C09279-12AI
Contextual Info: 025/0251 CY7C09269/79/89 CY7C09369/79/89 PRELIMINARY 16K/32K/64K x16/18 Synchronous Dual Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 6 Flow-Through/Pipelined devices — 16K x 16/18 organization CY7C09269/369

K7B403625B-QC

Abstract: K7A401800B-QC K7A401809B-QC K7A403200B-QC K7A403209B-QC K7A403600B-QC K7A403609B-QC K7B401825B K7B401825B-QC K7B403625B
Contextual Info: K7B403625B K7B401825B 128Kx36 & 256Kx18 Synchronous SRAM Document Title 128Kx36 & 256Kx18-Bit Synchronous Burst SRAM Revision History History Draft Date Remark 0.0 1. Initial draft May. 15. 2001 Preliminary 0.1 1. Changed DC parameters Icc ; from 300mA to 250mA at -65,