INDUCTIVE TR-10 HBM Search Results

JW8 F

Abstract: JW8 ON SOT23 marking 658 load dump pulse MARKING CODE 618 SOT23
Contextual Info: NUD3160 Industrial Inductive Load Driver This MicroIntegrationt part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices

JW8 F

Abstract: eld2 318F NUD3160 NUD3160DMT1 NUD3160LT1
Contextual Info: NUD3160 Industrial Inductive Load Driver This MicroIntegrationt part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices

marking code jw6

Abstract: SC-74 SZNUD SZNUD3124 NUD3124DMT1G NUD3124DMT1G JW6
Contextual Info: NUD3124, SZNUD3124 Automotive Inductive Load Driver This micro−integrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level

NUD3124DMT1G

Abstract: marking code jw6 NUD3124DMT1 318F NUD3124 NUD3124LT1 NUD3124LT1G NUD3124DM*G SC74 marking 345 square d relay
Contextual Info: NUD3124 Automotive Inductive Load Driver This MicroIntegrationt part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices

NUD3160DMT1G

Abstract: JW8 ON JW8 F NUD3160LT1G 318F NUD3160 NUD3160DMT1 NUD3160LT1
Contextual Info: NUD3160 Industrial Inductive Load Driver This MicroIntegrationt part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices

SZNUD3160DM*G

Abstract: SZNUD3160 SZNUD3160DMT1G JW8 F NUD3160DMT1G SZNUD SZNUD3160DM SZNUD3160LT1G sc741
Contextual Info: NUD3160, SZNUD3160 Industrial Inductive Load Driver This micro−integrated part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level

Contextual Info: NCV8408 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single N−Channel, DPAK http://onsemi.com NCV8408 is a single channel protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature,

A3197LU

Abstract: A3197LLT ALLEGRO MAGNETIC POSITION SENSOR U PACKAGE
Contextual Info: Data Sheet 27609.10A* 3197 PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH X These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by providing a digital output for

hall current transducer 5A

Abstract: A3197LLT A3197LU
Contextual Info: Data Sheet 27609.10A 3197 PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH X These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by providing a digital output for

GB10NB37LZ

Abstract: IC 7402 GB10NB37LZ, STGB10NB37LZT4 GP10NB37LZ gb10nb37 gb10nb IC 7402 nor 7402 NOR gate 7402
Contextual Info: STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features • Low threshold voltage ■ Low on-voltage drop ■ Low gate charge ■ High current capability ■ High voltage clamping feature TAB TAB 3 1 Applications ■ 1 3 TO-220 2 D²PAK Automotive ignition

lt 3133

Abstract: 3144 hall effect position
Contextual Info: 3197 PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH X These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by

Contextual Info: NCV8401, NCV8401A Self-Protected Low Side Driver with Temperature and Current Limit NCV8401/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain-to-Gate clamping for overvoltage protection.

C 12 PH Zener diode

Abstract: A102 TRANSISTOR hall effect sensor 3144 "battery protection" C 12 PH diode C 12 PH zener diode datasheet C 3197 din 40839 Gear Wheel Speed Sensor LT HALL SENSOR
Contextual Info: 3197 PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH X These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by

Diode zener 3a

Abstract: STW10NC70Z
Contextual Info: STW10NC70Z N-CHANNEL 700V - 0.6 Ω - 10.6A TO-247 Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE STW10NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 0.75 Ω 10.6 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES

NCV8402ADDR2G

Abstract: 8402AD NCV8402DDR2G NCV8402ADD*G
Contextual Info: NCV8402D, NCV8402AD Dual Self-Protected Low-Side Driver with Temperature and Current Limit NCV8402D/AD is a dual protected Low−Side Smart Discrete device. The protection features include overcurrent, overtemperature, ESD and integrated Drain−to−Gate clamping for overvoltage protection. This

Y60NK30Z

Abstract: plasma tv schematic diagram Y60NK30 STY60NK30Z
Contextual Info: STY60NK30Z N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH Power MOSFET TYPE STY60NK30Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 300 V < 0.045 Ω 60 A 450 W TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

LM 3177 switching reg

Contextual Info: , , PROTECTED HIGH-TEMPERATURE OPEN-COLLECTOR HALL-EFFECT LATCH These open-collector Hall-effect latches are capable of sensing magnetic fields while using an unprotected power supply. The A3197LLT and A3197LU can provide position and speed information by

Contextual Info: Data Sheet 27609.15† 3195 X PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 1 2 3 SUPPLY GROUND OUTPUT VCC LATCH Dwg. PH-013 Pinning is shown viewed from branded side. ABSOLUTE MAXIMUM RATINGS Supply Voltage, VCC 100 ms . 115 V*

PH-013

Abstract: GH-040-2
Contextual Info: Data Sheet 27609.15a 3195 X PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN VCC LATCH 3 OUTPUT 2 GROUND SUPPLY 1 Dwg. PH-013 Pinning is shown viewed from branded side. ABSOLUTE MAXIMUM RATINGS Supply Voltage, VCC 100 ms . 115 V*

STW8NC90Z

Contextual Info: STW8NC90Z N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW8NC90Z • ■ ■ ■ ■ VDSS RDS on ID 900 V < 1.38 Ω 7.6 A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

ZVS phase-shift converters

Abstract: W26NM60 STW26NM60FD schematic diagram welding device
Contextual Info: STW26NM60FD N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET ADVANCED DATA TYPE STW26NM60FD VDSS RDS on Rds(on)*Qg 600 V < 0.135 Ω 9.12 Ω*nC ID 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

W26NM60

Abstract: Zener Diodes 300v STW26NM60
Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM60 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

W18NK80Z

Abstract: STW18NK80Z
Contextual Info: STW18NK80Z N-CHANNEL 800V - 0.34Ω - 18A TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STW18NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.38 Ω 18 A 300 W TYPICAL RDS(on) = 0.34 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STW26NM50

Abstract: W26NM50 N-channel MOSFET to-247
Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS on ID STW26NM50 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE