INDUCTIVE TR-10 HBM Search Results

JW8 F

Abstract: eld2 318F NUD3160 NUD3160DMT1 NUD3160LT1
Contextual Info: NUD3160 Industrial Inductive Load Driver This MicroIntegrationt part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices

NUD3124DMT1G

Abstract: marking code jw6 NUD3124DMT1 318F NUD3124 NUD3124LT1 NUD3124LT1G NUD3124DM*G SC74 marking 345 square d relay
Contextual Info: NUD3124 Automotive Inductive Load Driver This MicroIntegrationt part provides a single component solution to switch inductive loads such as relays, solenoids, and small DC motors without the need of a free−wheeling diode. It accepts logic level inputs, thus allowing it to be driven by a large variety of devices

Contextual Info: NCV8408 Self-Protected Low Side Driver with Temperature and Current Limit 42 V, 10 A, Single N−Channel, DPAK http://onsemi.com NCV8408 is a single channel protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature,

GB10NB37LZ

Abstract: IC 7402 GB10NB37LZ, STGB10NB37LZT4 GP10NB37LZ gb10nb37 gb10nb IC 7402 nor 7402 NOR gate 7402
Contextual Info: STGB10NB37LZ STGP10NB37LZ 10 A - 410 V internally clamped IGBT Features • Low threshold voltage ■ Low on-voltage drop ■ Low gate charge ■ High current capability ■ High voltage clamping feature TAB TAB 3 1 Applications ■ 1 3 TO-220 2 D²PAK Automotive ignition

Diode zener 3a

Abstract: STW10NC70Z
Contextual Info: STW10NC70Z N-CHANNEL 700V - 0.6 Ω - 10.6A TO-247 Zener-Protected PowerMESH III MOSFET PRELIMINARY DATA TYPE STW10NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 0.75 Ω 10.6 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES

STW8NC90Z

Contextual Info: STW8NC90Z N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW8NC90Z • ■ ■ ■ ■ VDSS RDS on ID 900 V < 1.38 Ω 7.6 A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

W26NM60

Abstract: Zener Diodes 300v STW26NM60
Contextual Info: STW26NM60 N-CHANNEL 600V - 0.125Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM60 600 V < 0.135 Ω 30 A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

STW26NM50

Abstract: W26NM50 N-channel MOSFET to-247
Contextual Info: STW26NM50 N-CHANNEL 500V - 0.10Ω - 26A TO-247 Zener-Protected MDmesh Power MOSFET TYPE VDSS RDS on ID STW26NM50 500 V < 0.120 Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

STW9NC70Z

Contextual Info: STW9NC70Z N-CHANNEL 700V - 0.90 Ω - 7.5A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.2 Ω 7.5A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

power mosfet 350v 35a to 247

Abstract: STW8NC70Z
Contextual Info: STW8NC70Z N-CHANNEL 700V - 1.1 Ω - 7A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW8NC70Z • ■ ■ ■ ■ VDSS RDS on ID 700 V < 1.38 Ω 7A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

STU10NC70Z

Abstract: STU10NC70ZI
Contextual Info: STU10NC70Z STU10NC70ZI N-CHANNEL 700V - 0.58Ω - 9.4A Max220/I-Max220 Zener-Protected PowerMESH III MOSFET TYPE STU10NC70Z STU10NC70ZI • ■ ■ ■ ■ ■ VDSS RDS on ID 700 V 700 V <0.75Ω <0.75Ω 9.4 A 9.4 A TYPICAL RDS(on) = 0.58Ω EXTREMELY HIGH dv/dt CAPABILITY

STU8NC90Z

Abstract: STU8NC90ZI STU9NC90ZI
Contextual Info: STU8NC90Z STU8NC90ZI N-CHANNEL 900V - 1.1Ω - 7.6A Max220/I-Max220 Zener-Protected PowerMESH III MOSFET TYPE STU8NC90Z STU9NC90ZI • ■ ■ ■ ■ ■ VDSS RDS on ID 900 V 900 V < 1.38Ω < 1.38Ω 7A 7A TYPICAL RDS(on) = 1.1Ω EXTREMELY HIGH dv/dt CAPABILITY

w20nk50z

Abstract: W20NK50 P20NK50Z STP20NK50Z STW20NK50Z ST L9 Zener STW20NK50Z Marking STMicroelectronics
Contextual Info: STP20NK50Z - STW20NK50Z N-CHANNEL 500V - 0.23Ω - 20A TO-220/TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STP20NK50Z STW20NK50Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V < 0.27 Ω < 0.27 Ω 20 A 20 A 190 W 190 W TYPICAL RDS(on) = 0.23 Ω

W20NK50

Abstract: w20nk50z P20NK50
Contextual Info: STP20NK50Z - STW20NK50Z N-CHANNEL 500V - 0.23Ω - 20A TO-220/TO-247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STP20NK50Z STW20NK50Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V < 0.27 Ω < 0.27 Ω 20 A 20 A 190 W 190 W TYPICAL RDS(on) = 0.23 Ω

STW7NC90Z

Contextual Info: STW7NC90Z N-CHANNEL 900V - 1.55Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC90Z • ■ ■ ■ ■ ■ VDSS RDS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

STW7NC80Z

Abstract: Zener diode 400V 6A
Contextual Info: STW7NC80Z N-CHANNEL 800V - 1.5Ω - 6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW7NC80Z • ■ ■ ■ ■ ■ VDSS RDS on ID 800 V < 1.8Ω 6A TYPICAL RDS(on) = 1.5Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

STW8NC80Z

Abstract: schematic diagram welding device
Contextual Info: STW8NC80Z N-CHANNEL 800V - 1.3 Ω - 6.7A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW8NC80Z n n n n n VDSS RDS on ID 800 V < 1.5 Ω 6.7 A TYPICAL RDS(on) = 1.3 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED

STP5NK65Z

Abstract: L9 Zener P5NK65Z
Contextual Info: STP5NK65Z N-CHANNEL 650V - 1.5Ω - 5A TO-220 Zener-Protected SuperMESH Power MOSFET TYPE STP5NK65Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 650 V < 1.8 Ω 5A 85 W TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED

P7NK30Z

Abstract: F7NK30Z p7nk STF7NK30Z STP7NK30Z
Contextual Info: STP7NK30Z STF7NK30Z N-CHANNEL 300V - 0.80Ω - 5A - TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID Pw STP7NK30Z STF7NK30Z 300 V 300 V < 0.9 Ω < 0.9 Ω 5A 5A 50 W 20 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.80 Ω

P12NK80Z

Abstract: B12NK80Z STB12NK80Z STB12NK80ZT4 STP12NK80Z
Contextual Info: STP12NK80Z - STB12NK80Z N-CHANNEL 800V - 0.65Ω - 10.5A TO-220 / D2PAK Zener-Protected SuperMESH Power MOSFET PRELIMINARY DATA TYPE STP12NK80Z STB12NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V 800 V < 0.75 Ω < 0.75 Ω 10.5 A 10.5 A 190 W 190 W

STP5NK65Z

Abstract: L9 Zener P5NK65Z
Contextual Info: STP5NK65Z N-CHANNEL 650V - 1.5Ω - 5A TO-220 Zener-Protected SuperMESH Power MOSFET TYPE STP5NK65Z • ■ ■ ■ ■ ■ ■ VDSS R DS on ID Pw 650 V < 1.8 Ω 5A 85 W TYPICAL RDS(on) = 1.5 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY

P17NK40ZFP

Abstract: P17NK40Z STP17NK40ZFP sd 150 zener diode L9 Zener STP17NK40Z equivalent to220
Contextual Info: STP17NK40Z - STP17NK40ZFP N-CHANNEL 400V - 0.23Ω - 15A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET • ■ ■ ■ ■ ■ TYPE VDSS RDS on ID Pw STP17NK40Z STP17NK40ZFP 400 V 400 V < 0.25 Ω < 0.25 Ω 15 A 15 A 150 W 35 W TYPICAL RDS(on) = 0.23 Ω

P10NK70ZFP

Abstract: p10nk70z P10NK70 STP10NK70ZFP STP10NK70Z *70zfp L9 Zener L4910 p10nk
Contextual Info: STP10NK70Z STP10NK70ZFP N-CHANNEL 700V - 0.75Ω - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH Power MOSFET TYPE STP10NK70Z STP10NK70ZFP • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 700 V 700 V < 0.85 Ω < 0.85 Ω 8.6 A 8.6 A 150 W 35 W TYPICAL RDS(on) = 0.75 Ω

STW9NC80Z

Contextual Info: STW9NC80Z N-CHANNEL 800V - 0.82Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET TYPE STW9NC80Z n n n n n n VDSS RDS on ID 800 V <0.9Ω 9.4 A TYPICAL RDS(on) = 0.82Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED