IN 4001 RECTIFIER DIODE Search Results

SM4001-SM4007

Abstract: J17G
Contextual Info: SM 4001.SM 4007 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Standard silicon rectifier diodes SM 4001.SM 4007  5  

Contextual Info: SUF 4001 . SUF 4007 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module /5 Surface mount diode Ultrafast silicon rectifier diodes SUF 4001 . SUF 4007  5   0

Contextual Info: 1N 4001.1N 4007, 1N 4007-1300 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter ,2 Axial lead diode Standard silicon rectifier diodes 1N 4001.1N 4007, 1N 4007-1300 8  9  3  9  9 +

Contextual Info: UF 4001.UF 4007, UF 4007-1200 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter -3 Axial lead diode Ultrafast silicon rectifier diodes UF 4001.UF 4007, UF 4007-1200 8  9  4  9  9 +

Contextual Info: UF 4001.UF 4007, UF 4007-1200 -3 Axial lead diode Ultrafast silicon rectifier diodes UF 4001.UF 4007, UF 4007-1200 8  9  4  9  9 + 0+  4  9  9 +   9    9 3  5 "' 5 " 5 "= 5 "" 5 "2 5 " 5 "1 #88 #

DIODE 4007

Abstract: diode IN 4007 4001 4001 diode in 4007 diode diode IN 4007 diodes sm 4007 datasheet in 4007 rectifier diode 4001 silicon diode
Contextual Info: SM 4001.SM 4007 /5 Surface mount diode Standard silicon rectifier diodes SM 4001.SM 4007  5   0 1 3) 4) 18 7 *. /9 7 4  /* 7 4  (.( $ ( / 7 4 .   :   Values Units  < - :   . ;$  . // 7 34  ( * ;  <  6 

40011n

Contextual Info: 1N 4001.1N 4007, 1N 4007-1300 ,2 Axial lead diode Standard silicon rectifier diodes 1N 4001.1N 4007, 1N 4007-1300 8  9  3  9  9 + /+  3  9  9 +   9    9 2  '= "' '= " '= "> '= "" '= "1 '= " '= "0 #88 # 1

Contextual Info: UF 4001.UF 4007 -3 Axial lead diode Ultrafast silicon rectifier diodes UF 4001.UF 4007 8  9  4  9  9 + 0+  4  9  9 +   9    9 3  5 "' 5 " 5 "= 5 "" 5 "2 5 " #88 # 2 '  "  > #80 # 2 '

n4007

Abstract: LN4004 IN4007 n 4007 LN4005 ln4001 IN4003 74350 IN 4007 n 4002
Contextual Info: V 1 N4001 * 1 N4007 Silizium-Diffusions-Dioden Silicon diffusion diodes Anwendungen: Gleichrichter Applications: Rectifier Abmessungen In mm Dimensions in mm r »3,1 Absolute Grenzdaten Absolute maximum ratings Sperrspannung, periodische Spitzensperrspannung

Contextual Info: INTERNATIONAL SS rectifier DE I 4Ö5S4S2 4855452 INTERNATIONAL RECTIFIER □□D4C1G3 55C 04903 D Data Sheet No. PD-2.005C 7 '- ¿ > INTERNATIONAL RECTIFIER ^ ( 3 IOR 1N4D01 S E R IE S i.OAmp Silicon Rectifier Diodes Description/Features Major Ratings and Characteristics

diode 1N 4002

Abstract: 1N4001 1N4007 DO-204AL J-STD-002B Diodes 1n 4004 1N4007 vishay 1N4007 VISHAY 88503 IN 4004 diodes 1n4001 diodes
Contextual Info: 1N4001 thru 1N4007 Vishay Semiconductors General Purpose Plastic Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A VF 1.1 V IR 5.0 µA Tj max. 150 °C DO-204AL (DO-41) Features • Low forward voltage drop • Low leakage current

uf4007 General Semiconductor

Contextual Info: UF4001 THRU UF4007 Ultrafast Plastic Rectifier Reverse Voltage 50 to 1000 V Forward Current 1.0 A DO-204AL DO-41 Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideally suited for use in very high frequency switching

DO-41

Contextual Info: ADVANI OERLIKON/ SEMICOND 3bE D 02blb4fl OOOOODÖ b D S E L I T -O l-O l J SILICON DIODES S E M IC O N D U C T O R S e One-watt silicon zener diodes Vz TYPE /IN /IN ✓IN /IN /IN /IN ✓ IN ''IN ✓IN V4N ,1N /IN /IN /IN ✓ IN / IN ✓ IN ' IN /IN / IN

SM4000 Series

Abstract: SM400X in 4007 diode footprint ms 1051 similar ms 1051 125c049 SM4000
Contextual Info: bitemational S Rectifier . PD - 2.485 . Provisional Datasheet SM4000 Series SILICON R EC TIFIER 1 Amp Major Ratings and Characteristics Characteristics If avj Rectangular waveform V rrm If s m @ tp = 8.3ms half-sine VF @ I .OApk, Tj = 125°C Tj SM4000 Units

Full Material

Contextual Info: Vishay Intertechnology, Inc. AMS Avionics, Military, and Space One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components AMS (Avionics, Military, and Space) ミリタリー宇宙） AMS（航空、 衛星/GPS 4

MARKING J9B

Contextual Info: PD- 9.1509B International I R Rectifier IRF3415S PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description V d s s = 15 0 V

DL4007-13-F

Abstract: DL4007 dl4005-13-f DL4006-13-F DL4004-13-F DL4007-13 melf diode marking DS16001 DL4001 DL4002
Contextual Info: SPICE MODELS: DL4001 DL4002 DL4003 DL4004 DL4005 DL4006 DL4007 DL4001 - DL4007 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER Features • · · · · Glass Passivated Junction High Current Capability A Low Forward Voltage Drop Low Leakage Current B Lead Free Finish/RoHS Compliant Version Note 2

of IC 4511

Abstract: CI 4011 IC 4011 1N5186 1N5187 1N5188 1N5190 DIODE PK IN 4001 origin semiconductor rectifier Scans-0016000
Contextual Info: I^ lG O D D lS S MIL SPECS DDDl4G3fi 7 M IL-S-19500 '424 AMENDMENT 2 SUPERSEDING I AMENDMENT 1 16 January 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER TYPES TX AND NON-TX 1N5186, 1N5187, 1N5188, AND 1N5190

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. INCH-POUND MIL-PRF-19500/682B 1 March 2013 SUPERSEDING MIL-PRF-19500/682A 16 March 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 17 January 2013. MIL-PRF-19500/680A 17 October 2012 MIL-PRF-19500/680 7 September 2000 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, DUAL SCHOTTKY CENTER TAP

Contextual Info: STPS6045HR Aerospace 2 x 30 A - 45 V Schottky rectifier Features • Forward current: 2 x 30 A ■ Repetitive peak voltage: 45 V ■ Low forward voltage drop: 0.75 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses ■ Low capacitance

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 22 May 2013. INCH-POUND MIL-PRF-19500/678B 22 February 2013 SUPERSEDING MIL-PRF-19500/678A 14 June 2012 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON,DUAL SCHOTTKY CENTER TAP

Contextual Info: STPS40100HR Aerospace 2 x 20 A - 100 V Schottky rectifier Datasheet - production data Features • Forward current: 2 x 20 A • Repetitive peak voltage: 100 V • Low forward voltage drop: 0.9 V • Maximum junction temperature: 175 °C • Negligible switching losses

97942

Abstract: RX147 rx174 X40FG 96214 RX135 RX107 C5001049-1 RX204 581r887h01
Contextual Info: 44E » MIL SPECS 0 G 0 0 12 S 0 0 3 3 3 ^ 2 S « N I L S |The documentation and process conversion | |measures necessary to comply with this | ¡revision shall be completed by 3 0 D e c 93J IINCH-POUNDI I_ I MIL-S-19500/576A 30 June 1993 SUPERSEDING