IN 3319 B Search Results

Contextual Info:
-1 S 
SENSITRON SEMICONDUCTOR
Technical Data Data Sheet 3319, Rev. A
0-1
 0-1   


•      ••     ••   !"   ••   

DSA006512

Contextual Info:
-1 S 
SENSITRON SEMICONDUCTOR
Technical Data Data Sheet 3319, Rev.
0-1
 0-1   


•      ••     ••   !"   ••   
•

Contextual Info: 3M High Flex Life Cable .050" 28 AWG Stranded, PVC 3319 Series • Flex life of 100 million cycles at 1 3/4 inch diameter • 19 strands of high strength copper alloy provide the longest flex life available for dynamic applications • 28 AWG wire on .050 inch wire spacing permits mass

2651 300V 14 pin

Abstract: AWM 2651
Contextual Info: 3M High Flex Life Cable .050" 28 AWG Stranded, PVC 3319 Series • Flex life of 100 million cycles at 1 3/4 inch diameter • 19 strands of high strength copper alloy provide the longest flex life available for dynamic applications • 28 AWG wire on .050 inch wire spacing permits mass

AWM 2651

Abstract: AWM 2651 VW-1 300V AWM 2651 28 awg E42769 AWM 2651 300V 2651 300V VW 2651 300V 2651 300V AWM Style 2651 vw1 AWM 2651 VW-1 28 awg
Contextual Info: .050 High Flex Life Cable 28 AWG Stranded, PVC 3319 Series IMPORTANT NOTICE TO PURCHASER ALL STATEMENTS, TECHNICAL INFORMATION AND RECOMMENDATIONS CONTAINED HEREIN ARE BASED ON TESTS WE BELIEVE TO BE RELIABLE, BUT THE ACCURACY OR COMPLETENESS THEREOF IS NOT GUARANTEED, AND

SOLID CONDUCTOR WIRE, MIL SPEC 30awg

Abstract: 28AWG M336540 E3709 sil 3811 28/H5GQ1H24MJR-T0C 3306/300FT
Contextual Info: 3M IDC Cables Internal Wiring Internai Wiring 3M ” .025" Round Conductor Flat Cable, 3749 Series T h e 3749 series cables have c lo se sp acin g , w h ch p erm its h ig h er signal density. T P E in su latio n p ro v id es ex cellen t transm ission properties. Z ip p a b le fo r b ranching o r d isc re te term ination.

trimpot 100K

Abstract: trimpot horizontal 2k trimpot 100k trimpot H-90 trimpot 100K 10 turn
Contextual Info: PL IA NT Features *R oH S CO M • 9 mm Round / Single Turn / Carbon ■ ■ ■ ■ ■ Commercial / Open Frame Top and side adjust Cross slot adjustment design Horizontal and vertical mounting styles Dust resistant/splash resistant covers PC board stand-offs and retention feature

34A-100

Contextual Info: TIP34; A; B; C PHILIPS INTERNATIONAL 5bE 3 • 711002b 0043512 410 » P H I N SILICON POWER TRANSISTORS P-N-P epitaxial-base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications. N-P-N complements are

Contextual Info: ® Cree XLamp CXA2540 LED CLD-DS67 Rev 4A Product family data sheet Product Description features Table of Contents The XLamp® CXA2540 LED array • Available in ANSI white bins Characteristics. 2 expands Cree’s family of high‑flux,

ztx953

Abstract: IN 3319 B DSA003779
Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX953 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer hFE MIN. TYP. MAX. UNIT CONDITIONS. -880 -1100 mV IC=-4A, VCE=-1V*

12BD6

Abstract: Scans-0017270
Contextual Info: I2BD6 TUNS-SOL PENTODE MINIATURE TYPE 3; 4 COATED UN IPOTENT IAL CATHODE M AX HEATER 12.6 VOLTS 0.15AMP. 6 TO* , MAX. AC OR DC 8 MAX ANY MOUNTING POSITION G U S S BULB BOTTOM VIEW MINIATURE BUTTON 7 P I N BA SE THE 12BD6 IS A MINIATURE REMOTE-CUTOFF PENTODE DESIGNED FOR USE AS A

Potentiometers 504 vertical

Abstract: H-90
Contextual Info: NT Features • RoHS compliant* S CO M PL IA ■ 9 mm Round / Single Turn / Carbon *R oH ■ ■ ■ ■ ■ Commercial / Open Frame Top and side adjust Cross slot adjustment design Horizontal and vertical mounting styles Dust resistant/splash resistant covers

14-PIN

Abstract: 14jJ 14pin
Contextual Info: lelwom PRELIMINARY INFORMATION Semiconductor, Inc. TC1030 LINEAR BUILDING BLOCK - QUAD LOW POWER OP AMP FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ T he T C 1 030 is a quad, low pow er operational am plifier designed fo r low pow er applications. It is designed specifically for operation from a single

Contextual Info: 4 3 CA-09FCP-XXXX [3.30] 2= F3 t .424 [10.77] f . 150 [3.SI] _L □ [ I . 02] 11 □ □ ST .759±.010 [I9.2B±0.25] .2304.010 [5.04-40.25] f .4-201.030 [I0.B710.76] I t_ Í 2 REVISIONS L TR DESCRIPTION DATE APPROVED A INITIAL RELEASE SEE DO 3319 DL

BD806

Abstract: TRANSISTOR C 557 B B0806 TRANSISTOR bd 147 BD808 b0808 ADC 808 adc 809 T557 221A-04
Contextual Info: M OT OR OL A SC X S TR S /R 1EE D I F b3fci7254 QDâM7ti3 b | MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC HIGH POWER SILICON PNP TRANSISTOR . . . designed for use in high power audio amplifiers complementary or quasi complementary circuits. utilizing 10 AMPERE

sus material 400

Abstract: ET401 2SC4750 2SC4831 2SC3320 2SC3317 2SC3318 2SC3319 2SC3321 2SC4273
Contextual Info: COLLMER SEMICONDUCTOR INC MfiE D • 2230712 OOOlbOO M2T ■ COL T ransistors 'T 'L S -1 ° \ Q S u p er high speed sw itch in g transistors • S u ita b le fo r 100kHz class sw itch in g regulators D e v ic e ty p e V cbo V o lts V CEO VcEO V o lts s u s

2N6468

Abstract: TA8709
Contextual Info: File N um ber HARRIS 888 SENICOND 2N6467, 2N6468 SECTOR SLE T> Silicon P-N-P Medium-Power Transistors 4302571 0 0 4 0 S57 M'ÎS M Ê H A S TERMINAL DESIGNATIONS General-Purpose Types for Switching Application Features: • Low saturation voltages ■ Maximum-safe-area-of-operation curves

Contextual Info: Ordering number : ENA0206 Monolithic Linear IC LA1652FN Time Code Reception IC Overview The LA1652FN time code reception IC receives long-wave time standard broadcasts such as the Japanese JJY and German DCF77 standards and detects and outputs the time code superposed on the long-wave signal.

TIP34

Abstract: 34B SOT 1A05A TIP33 TIP33A TIP33B TIP33C TIP34A TIP34B TIP34C
Contextual Info: TIP34; A; B; C PHILIPS IN T E R N A T I O N A L SbE D m 711Gfl2fc. 0043512 410 M P H I N SIL IC O N P O W E R T R A N S IS T O R S P-N-P epitaxial-base power transistors in the plastic SO T -9 3 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications. N-P-N complements are

B0938

Abstract: BD938 942CO z82178 B0934 BD933 BD934 BD942 BD934 philips
Contextual Info: BD934; 936 BD938; 940 BD942 PHILIPS INTERNATIONAL SbE D m 711002b DCm3[]5a TDD • PHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T -3 3 -n P-N-P silicon transistors in a plastic envelope intended fo r use in output stages of audio and television am plifier circuits where high peak powers can occur.

nm3007

Abstract: D3512
Contextual Info: SAW Bandpass Filter 201154B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D3512 2.5±0.2 25.4±0.2 7.6±0.2

M23269J

Abstract: CYR10 MIL-C-23269 CYR15 CYR51 M23269 marking code 3018 CYR53 glass capacitor MIL-PRF-23269
Contextual Info: Glass Dielectric Capacitors MIL-PRF-23269 MARKING AVX CYR10 CYR10 M23269J 02-3042 AVX 07 B JCY7A 0R5JM CYR15 J = JAN Trademark C = Capacitor Y = Glass Dielectric 7 = Last digit of year A = 4 week lot code W 28.58 1.125 Min. L AVX JCY7E 151JM 0R5 = Capacitance code –

Contextual Info: A I R C H S eptem ber 1995 I L D Revised M arch 1999 S E M IG O N D U G T O R T M CGS3311 • CGS3'512 • CGS3313 • CGS3314 CGS3316 • CGS3G¡17 • CGS3318 • CGS3319 CMOS Crystal Clcick Generators • CGS3315 • General Description Features C G S 3314,

NCB1206B102TR030F

Abstract: NCB1206B121TR090F 0201 land pattern NCB1206B601TR040F NCB0603R600TR NCB0402P600TR030F NCB0805A152TR
Contextual Info: Ferrite Chip Beads NCB Series FEATURES • RUGGED CONSTRUCTION IN STANDARD EIA SIZES • EFFECTIVE EM/RFI SUPPRESSION UP TO 1 Ghz • CURRENT RATINGS UP TO 5 AMPS STYLE 2 • 100% CLOSED MAGNETIC CIRCUIT, AVOIDS CROSSTALK • BOTH FLOW AND REFLOW SOLDERING APPLICABLE