IN 3099 J Search Results

Contextual Info: 7 PART NO. EN G . NO. P O L A R IZ IN G P E G O P T IO N 3099-I2AI 3099-I2BI 50-29-1412 50-29-1462 WITH WITHOUT NOTES; 1. THIS HOUSING FOR USE WITH STANDARD .093/ 2.36 SERIES RECEPTACLES. 2. MATERIAL; I I- UNFILLED POLYESTER, 94V-0, COLOR-BLACK /£\ ONLY REQUIRED WHEN USING PARTS WITH OPTIONAL POLARIZING PEG.

3099P-1-103

Abstract: 3099P-1-500 potentiometer dual 3099P-1-102 3099P-1-203 3099P 3099P-1-205 3099P-1-502 trimpot 100 ohm 3099P-1-504
Contextual Info: TRIMPOT A D JU S T M E N T POTENTIOMETER Model 3099 In-Line P otentiom eter C erm et Element 3A " Long FEATURES Actual Size • Stan d ard D IP size TO-116 . • C om p atib le with D IP autom atic insertion equipm ent. • Se a le d to m eet M IL-R -22097 im m ersion

Contextual Info: HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY SARAM J d t) IDT70824S/L Integrated De vice Technology, Inc. FEATURES: DESCRIPTION: • 4K x 16 Sequential Access Random Access Memory (SARAM™) - Sequential Access from one port and standard Random

Contextual Info: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) J d t) Integrated Device Technology, Inc. FEATURES: • • • • • H igh-speed access - M ilitary: 35/45ns (max.) - C om m ercial: 20/25/35/45ns (max.) Low -power operation

EOB-3 E 24

Abstract: "SLDC"
Contextual Info: " V : if Nf HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) jd t) IDT70824S/L Integrated Device Technology, Inc. DESCRIPTION: FEATURES: • • • • • • • • • • • • T h e ID T 7 0 8 2 4 is a high-speed 4K x 16-bit Sequential

PN-80-1

Abstract: G84 Package Intel 82430 IDT70824 IDT70824L IDT70824S IDT70824G
Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

IDT70824

Abstract: IDT70824L IDT70824S 0824X
Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

Intel 82430

Abstract: IDT70824 IDT70824L IDT70824S
Contextual Info: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

D1 PGA 478

Abstract: Intel 82430 saram idt
Contextual Info: HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features ◆ ◆ ◆ ◆ ◆ ◆ High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) Low-power operation – IDT70824S Active: 775mW (typ.)

IDT70824

Abstract: IDT70824L IDT70824S
Contextual Info: HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) IDT70824S/L Integrated Device Technology, Inc. FEATURES: • • • • • High-speed access – Military: 35/45ns (max.) – Commercial: 20/25/35/45ns (max.) • Low-power operation

2049B

Contextual Info: Ordering number: EN 3099 No.3099 _ 2 S C 4 4 9 3 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features . High breakdown voltage • Small Cq]j • High reliability adoption of HVP process

2SC4493

Abstract: 2049B
Contextual Info: Ordering number: EN 3099 No.3099 _ 2 S C 4 4 9 3 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features . High breakdown voltage • Small Cq]j • High reliability adoption of HVP process

Contextual Info: y r> HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) H / IDT70824S/L Integrated Device Technology, Inc. FEATURES: • • • • • High-speed access - Military: 3 5/4 5 n s (m ax.) - Com m ercial: 2 0 /2 5 /3 5 /4 5 n s (m ax.)

Contextual Info: S ÏN æ y HIGH SPEED 64K 4K X 16 BIT IDT70824S/L SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Th e ID T 7 0 8 2 4 is a high-speed 4K x 16-bit Sequential Access Random Access M em ory (S A R A M ). T h e S A RA M

Contextual Info: IDT70824S/L HIGH SPEED 64K 4K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) Features * * High-speed access - Military: 35/45ns (max.) - Commercial:20125135145ns (max.) Low-power operation - IDT70824S Active: 775mW(typ.) Standby: 5mW (typ.)

BD5856

Contextual Info: DRAWING MADE T H IS D R A W IN G IN T H I R D IS A NG LE P R O J E C T I O N RELEASED U N P U B L IS H E D . BY AMP COPYRIGHT □ 1ST FOR P U B L IC A T IO N INCORPORATED. BD ALL INTERNATIONAL RIGHTS RESERVED. REVISIONS 48 D E SC R IP TIO N REDRAWN REV PER ECN BD 5049

M23269J

Abstract: glass capacitor CYR10 M23269 CYR53 CYR51 CYR15 capacitor cross reference avx
Contextual Info: Glass Dielectric Capacitors MIL-PRF-23269 MARKING AVX CYR10 CYR10 M23269J 02-3042 AVX JCY5A 0R5JM CYR15 J = JAN Trademark C = Capacitor Y = Glass Dielectric 5 = Last digit of year A = 4 week lot code W 28.58 1.125 Min. L AVX JCY6E 151JM 0R5 = Capacitance code –

ALLIANCE SEMICONDUCTOR

Abstract: alliance
Contextual Info: 1998 Alliance Semiconductor Corporation. All rights reserved. 1998 Product Databook. Alliance Semiconductor Corporation reserves the right to make changes in this databook at any time to improve design and supply the best product possible. Publication of advance information does not constitute commitment

Contextual Info: DA TA C O N T A I N E D IN T H I S DOCUMENT IS P R O P R IET A R Y TO TROMPETER E L E C T R O N IC S INC. AND S H A L L NOT BE D I S C L O S E D , C O P I E D OR US ED FOR PROCUR EM EN T OR MA N UFA CTURE WITHOU T EXPRESS W RITTEN PERMISSION 590 RE V I S I O N S

M23269J

Abstract: CYR10 MIL-C-23269 CYR15 CYR51 M23269 marking code 3018 CYR53 glass capacitor MIL-PRF-23269
Contextual Info: Glass Dielectric Capacitors MIL-PRF-23269 MARKING AVX CYR10 CYR10 M23269J 02-3042 AVX 07 B JCY7A 0R5JM CYR15 J = JAN Trademark C = Capacitor Y = Glass Dielectric 7 = Last digit of year A = 4 week lot code W 28.58 1.125 Min. L AVX JCY7E 151JM 0R5 = Capacitance code –

diagram pc board ta 306-2

Abstract: 74HC540A 74HC541A 74HC164 74HC541 S9132 KMPDA0174EA
Contextual Info: IMAGE SENSOR Profile sensor S9132 High-speed frame rate sensor capable of acquiring two-dimensional projection data The profile sensor S9132 is a high-performance CMOS area sensor particularly intended to acquire projection data. A projection profile in the X

d2109

Abstract: 3DD2109 D-2109 Jilin Sino-Microelectronics jilin TO-3P
Contextual Info: Case-rated bipolar transistor for type 3DD2109 for low frequency amplification R 3DD2109 FEATURES HIGH BREAKDOWN VOLTAGE:Vcbo=900V LOW SATURATION VOLTAGE:Vce sat =0.5V(max.) HIGH SWITCHING SPEED:tf=0.3 S(max.) HIGH RELIABILITY TO-3P(H)IS APPLICATIONS SWITCHING POWER SUPPLY FOR COLOR TV

D13002S

Abstract: D13002 Jilin Sino-Microelectronics 3dd13002s transister 3DD13002s to 126 POWER TRANSISTER NPN TRANSISTER Jilin 3DD13002
Contextual Info: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13002S Characteristic/features ◆High breakdown voltage ◆High current capability ◆High switching speed ◆High reliability Application ◆Energy-saving light ◆Electronic ballasts ◆High frequency switching power supply

d13002

Abstract: D13002E transister 1A TRANSISTER Silicon Transister D1300 power transister 3DD13002 Jilin Sino-Microelectronics
Contextual Info: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTER D13002E Characteristic/features ◆High breakdown voltage ◆High current capability ◆High switching speed ◆High reliability Application ◆Energy-saving light ◆Electronic ballasts ◆High frequency switching power supply