IN 1004 DIODES Search Results

IN 1004 diodes

Abstract: boonton 230A HP 5082-1003 diode 5082-1001 5082-1001 HP STEP RECOVERY DIODES 1006 diode 1N4456 diode 5082-1002 hp 5082 step recovery
Contextual Info: HIGH CONDUCTANCE DIODES H E W L E T T PACKARD COMPONENTS Features 5082-1001 IN 4456 5082-1002 5082-1003 5082-1004 5082-1006 . . ► — FAST SWITCHING LOW CAPACITANCE HIGH CURRENT CAPABILITY D 2 5 .4 (1 .0 0 ) A MIN. Description/Applications

MB86A15A

Abstract: mb86a15 IN 1004 diodes
Contextual Info: Product Profile MB86A15APMT-M-BND October 2004 Edition 1.60 QPSK Silicon Tuner FME/MM/PP/1004 OVERVIEW Fujitsu’s MB86A15APMT-M-BND is a tuner and QPSK demodulator for digital satellite broadcasting in a single 120 pin package. All functions necessary for receiving DVB-S signals AGC, direct conversion, PLL,

Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 Features FAST SWITCHING LOW CAPACITANCE HIGH CURRENT CAPABILITY Description/Applications The 5082-1000 series of diodes feature planar silicon epitaxial construction to provide high conductance, low

YSI 44201

Abstract: ysi44201 LT1004 LT1034 LT1004-2 LT1004C LT1004CH LT1004M LT1004MH YSI 44007
Contextual Info: _ LT1004 \ Micropower Voltage References F € flfT U R € S DCSCMPTIOn • ■ ■ ■ ■ ■ The LT1004 Micropower Voltage References are two terminal bandgap reference diodes designed to pro­ vide high accuracy and excellent temperature charac­

diode 1007

Abstract: FAGOR DIODE
Contextual Info: FAGOR 57E D Bi 3MST3SS DDDD73D 315 « F G R S FF 1001.FF 1007 FAGOR ELECTRONICS Amp, Fast Recovery Silicon Dimensions in nun. llSil? B rS lS S ii: DO-41 Plastic ¿USk Voltage 50 to 1.000 V. Current 1 A. at 4S°C. • Fast Recovery Diodes Mounting instructions

2kpb

Abstract: 1n4000 sERIES DIODES AW04M 1N5402 DIODES DF04 KBPC2506 DIODES INC 2KBP005 kpbc1500 general semiconductor DF005 Collmer Semiconductor kbpc3510
Contextual Info: BRIDGE RECTIFIERS & DIODES Standard Recovery Bridges Series DF DFM DFS WOM KBP 2W0M 2KPB l{AV 1 1 1 KBL KBU4 KBPC6 KBU6 KBPC8 KBU8 KBPC10P KBU10 KBPC1S KBPC25 KBPC35 MP 1.5 1.5 2 2 4 4 Voltage 50 DF005 DF005M DF005S W005M KBP005 2W005M 6 8 2KBP005 KBL005

diode gp 805

Abstract: GP804 GP505 GP504 GP506 GP806 "GAD Semiconductors" GH506 diode gp DIODE GP504
Contextual Info: qacf J ♦ Very high maximum operating junction temperature up to 260°C ♦ Very low and temperature independent dynamic recovery characteristics (trr, lRM, Qrr, switching losses) SEMICONDUCTORS ♦ Very low leakage current at the operating temperature

marking code EA SMD

Abstract: 2501 BRIDGE SMD smd marking EA KBPC1006-W KBPC3506W-G KBPC3508-W KBPC15W-G BRIDGE RECTIFIERS kbpc 1510 SMD MARKING CODE 50A KBPC2510W
Contextual Info: COMCHIP Silicon Bridge Rectifiers SMD Diodes Specialist KBPC10005W-G Thru. KBPC5010W-G Series Reverse Voltage: 50 to 1000V Forward Current: 10/15/25/35/50A RoHS Device KBPC-W Features -Surge overload-240~500 Amperes peak -Low forward voltage drop -Electrically isolated base -2000 Volts

P6004R

Abstract: BYW 62 s95A P4004 214200 BYW 200 P1004R BYW17/100
Contextual Info: DIODES DE REDRESSEMENT rectifier diodes V RWM 'o 'f TYPES A 1 ,2 5 A F F F F F F F no nxy nxy no BY BY BY BY BY t am b = 5 0 ° C 251 252 253 254 255 BYW 17BYW 17 BYW 17 BYW 17BYW 17BYW 17BYW 17- 100 200 400 600 800 1000 1200 3 A / 1N 1N IN 1N 1N IN 1N (R)

Contextual Info: _ LT 1004 / T L i r m TECHNOLOGY Micropower Voltage References FCflTURCS DCSCftlPTIOfl • Guaranteed ±4mV initial accuracy LT1004-1.2 ■ Guaranteed ± 20mV accuracy LT1004-2.5 ■ Guaranteed 10.uA operating current ■ Guaranteed temperature performance

Contextual Info: RECTIFIER DIODES, Ultra Fast Recovery, Plastic Package IS * P a rt Num ber Maximum Average Rectified Peak inverse Voltage i0 Amps mm PIV (Volts M axim um Peak Forward Surge Currant Fwd Voltage g 8 .3ms gR ated f. Superimposed SAd Ti * i S ° C lf . , (Amps)

Diodes de redressement

Abstract: BAY21 BAY18 BOITIER MU86 f 1010 fr 608 TF80 650C RG606 fr 1004 diodes
Contextual Info: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes VRWM 'FSM VF @ •f r m 10 ms •f m A (A) (V) vrmm TYPES 60 A / 'F (A) tease = 75°C •R G 6 0 2 F -R G 6 0 2 *RG 604 F - RG 604 •RG 606 F - RG 606 *RG 608 F - RG 608 *RG 610 F - RG 610 100 A

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1004 Series SP1004 Series 5pF 8kV Bidirectional TVS Array RoHS Pb GREEN Description Back-to-back zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a

Contextual Info: TVS Diode Arrays SPA Diodes General Purpose ESD Protection - SP1004 Series SP1004 Series 5pF 8kV Bidirectional TVS Array RoHS Pb GREEN Description Back-to-back zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a

SP1004-04VTG

Abstract: SOT953 SP1004
Contextual Info: SPA Silicon Protection Array Products 5pF Bidirectional TVS Array for ESD Protection HF RoHS SP1004 Lead-Free/Green Series Pb GREEN Description Back-to-back zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a

Contextual Info: Revision 3 Accelerator Series FPGAs – ACT 3 Family Features • Up to 10,000 Gate Array Equivalent Gates up to 25,000 equivalent PLD Gates • Highly Predictable Performance with 100% Automatic Placeand-Route • As Low as 9.0 ns Clock-to-Output Times (–1 Speed Grade)

d170c

Contextual Info: u r _ LT1004 m TECHNOLOGY D€SCmi>T!On F€ffTUft€S Guaranteed ± 4 m V initial accuracy L T 1 0 0 4 -1 .2 Guaranteed ± 2 0 m V accuracy LT 10 0 4 -2 .5 Guaranteed 1 0 ^ A operating current Guaranteed temperature performance Operates up to 20m A

1020-ABB-JD-BA

Abstract: KAI-1020
Contextual Info: KAI-1020 IMAGE SENSOR 1000 H X 1000 (V) INTERLINE CCD IMAGE SENSOR JUNE 9, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 2.1 PS-0019 KAI-1020 Image Sensor TABLE OF CONTENTS Summary Specification . 6

M38510/14103BEC

Abstract: 7901101ca 883C4582BC 7704501EA ucs5801
Contextual Info: SPRAGUE/SEMICOND GROUP 14E D • Ö513fl50 00050QM 1 ■ 7^3-0/ €# SPRAGUE THE MARK OF RELIABILITY MIUTfìRV INTCGRAT6D CIRCUITS WR-219 CMOS BIPOLAR BiMOS S P R A G U E / S E M I C O N D GROU P 14E D ■ Ö513ÖSG □□OSGÜS 0 ■ ~J~- MIUTflRV ICS INDEX

LX 2240

Abstract: 1U K 630 A9 lz 150 HX 710 112E1 S7 224 le-uw-s2w Q9100
Contextual Info: http://catalog.osram-os.com UW Package Type 1-9 1: Headlamp => one row with x chips 2: 2x2 chips 3: 2x3 chips Headlamp: Number of Chips 1: 1 chip 2: 2 chips 3: 3 chips 4: 4 chips 5: 5 chips Color 1 Headlamp Design Versions 01: Standard Gen-II All Values x 1000

E94661

Abstract: PBPC1001 PBPC1007
Contextual Info: PBPC1001 - PBPC1007 10A BRIDGE RECTIFIER Features • · · · · · · Diffused Junction High Current Capability Surge Overload Rating to 150A Peak High Case Dielectric Strength of 1500V Ideal for Printed Circuit Board Application Plastic Material - UL Flammability

E94661

Abstract: GBU10005 GBU1002 GBU1010
Contextual Info: GBU10005 - GBU1010 10A GLASS PASSIVATED BRIDGE RECTIFIER SPICE MODEL: GBU1002 Features • · · · · · Glass Passivated Die Construction High Case Dielectric Strength of 1500VRMS Low Reverse Leakage Current Surge Overload Rating to 220A Peak Ideal for Printed Circuit Board Applications

UF1001

Abstract: UF1003 UF1004 UF1005 UF1007 DS25002
Contextual Info: UF1001 - UF1007 1.0A ULTRA-FAST RECTIFIER Features • · · · · · · Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Low Reverse Leakage Current Surge Overload Rating to 30A Peak Low Reverse Leakage Current

pr1004

Abstract: A-405 PR1005L
Contextual Info: PR1001/L - PR1005/L 1.0A FAST RECOVERY RECTIFIER Features • · · · · · Diffused Junction Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current Plastic Material: UL Flammability