IKP10N60T K10T60 Search Results

IKP10N60T K10T60 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
k10t60 Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKP10N60T k10t60	PDF
k10t60 Abstract: Q67040S4681 Q67040S4682 30A20V fast recovery diode 1000v 10A IKP10N60T K10T60 IKB10N60T IKP10N60T SWITCHING DIODE 600V 2A Q67040-S4681 Contextual Info: IKP10N60T IKB10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKP10N60T IKB10N60T P-TO-220-3-1 O-220AB) Oct-04 k10t60 Q67040S4681 Q67040S4682 30A20V fast recovery diode 1000v 10A IKP10N60T K10T60 IKB10N60T IKP10N60T SWITCHING DIODE 600V 2A Q67040-S4681	PDF
Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •            Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKP10N60T	PDF
k10t60 Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKP10N60T PG-TO-220-3-1 k10t60	PDF
Contextual Info: TRENCHSTOP Series IKP10N60T p Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: • Very low VCE sat 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s	Original	IKP10N60T	PDF
Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKP10N60T	PDF
IKP10N60T Abstract: IKP10N60T IGBT k10t60 Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKP10N60T PG-TO-220-3-1 O-220AB) IKP10N60T IGBT k10t60	PDF
K10T60 Abstract: IKP10N60T PG-TO-220-3-1 fast recovery diode 1000v 10A Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKP10N60T K10T60 IKP10N60T PG-TO-220-3-1 fast recovery diode 1000v 10A	PDF
k10t60 Abstract: IKP10N60T PG-TO-220-3-1 Contextual Info: IKP10N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C	Original	IKP10N60T k10t60 IKP10N60T PG-TO-220-3-1	PDF