IJ3 D Search Results

T100

Contextual Info: TOP VIEW ± . dz ±z dz 1000pF 1 © : : 1 IJ8 2 IJ7 - m juuu— l_ -ts r rr ri^ : 2 AAA jjsnnnn _ J S Y T T T \,_ IJ6 IJS IJ4 IJ3 J - IJ2 IJ1 ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 3 -P 1 : (J 2 -J 1 ) (P 7 -P 5 ) : (J 5 -J 4 ) 1 : 2 ± 3%

2SC4535

Contextual Info: Power Transistors 2SC4535 2SC4535 Prelim inary Silicon N P N Trip le-D iffu sed Planar Darlington Type Package Dim ensions P ow er Switching U nit ' mm 5 2max. I Features H igh s p e e d sw itch in g ' 6 .9 m in . h- «1 - IJ3-r t f — I 1 - 3 .2

Contextual Info: TOP VIEW ± . ± z ± z ± z 1000pF 1 P8 1 ? :2 IJ8 IJ7 IJ6 —L IJ S JBfTTTi| IJ 4 1 :2 © IJ3 J |J2 jjsn rn _J5YTTT\,_ I I ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 3 - P 1 : (J 2 -J 1 ) ( P 7 - P 5 ) : (J 5 -J 4 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE:

Contextual Info: lOOOpF, 2KV 1 : 1 75 & 75 IJ8 NOTES: IJ 7 —vw- IJ6 1.0 IJ 5 1 : 1 IJ 4 IJ3 75 J P IN S WITHOUT ELECTRICAL CONNECTION A R E OMITTED. IJ2 - j ir r r r \ _ IJ1 ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 1 - P 3 - P 2 : ( J 6 -J 3 ) ( P 8 - P 6 ) : ( J 2 -J 1 )

2Sc933

Abstract: 2SC933NP
Contextual Info: mt il -ss IV S S I S ^ H UT« S No. 3 2 9 - 4 ! óó 1 ffO SÌ-C933NP 370- 05 « l i 0276 -63 - 2111 < * f » No.295 '> ij3 > N P N X L ° ^ + '> -^ ;U 7 V — 2SC933NP »*£» Absolute Maximum R atin g s/ Ta =25°C il le 2SC 933N P -f- # {ÌL ^cao 50

STK5476

Contextual Info: as « n. &« S T K F Z » fra 5 4 7 6 'SI i i f± « 3 ^ 1. $ m m : i2 tf> 2 ./fe tl : 3- m it : VTR « i $ / * : 3 '@ « f9 s s , A n 5. 55 _ * &ÍT H *~^>n^ita»!n=(ra¡s?.v,:¿R}íB^ * í* it S L * 3 - « 5 . iJ3ËirS3?3-rîï. Ä i*:a*3-rS5 í5 -» -r-r:sr> í-f,

G8ms

Abstract: 4HL1
Contextual Info: 3SK225 SILICON N CHANNEL DUAL GATE MOS TYPE FE LD EFFECT TRANSISTOR U n it in mm T V T U N E R , V H F RF A M P L I F I E R A P P L I C A T I O N S . + 0.2 Z.9 -C13 F M T U N E R APPLIC A TIO NS. T V T U N E R , U H F RF A M P L I F I E R A P P L I C A T I O N S .

.j3T

Abstract: kudc
Contextual Info: !! # ! " # $ ! " " % !&' *& +,- ) $ $ $ $ $ $ 1 . 2 31 . 2 4 # 4 5 1 6 ! 8 # # # 9 5 1 9# 1 ; < $3 : #5 $ $= 1 > ? 1 > ? 1 # 1 $B # !&'CDE $B $ FG ,H ) I J3 $ !&'CDE $4O 3 A 3 3 N . . $ $ $ $ $ $ 1 4 1 1 9# 1 K 1L1 $. 3 A 2 1 #5 3 *M $ ; 1" $ *=4 ; 1" $*

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER _ 2SD2387 POW ER AM PLIFIER APPLICATIONS j, Unit in nun 3.2 t 0-3 • • High Breakdown Voltage : V c e O = 140V (Min.) Complementary to 2SB1558 i= M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: SILICON NPN EPITAXIAL TYPE TRANSISTOR A U D IO AM PLIFIER A PPLICATIONS. • • • • • • High Current Capability : Iç = 150mA Max. High DC Current Gain : hpg = 70~700 Excellent hpE Linearity : hFE (Ic = 0.1mA)/h FE(IC = 2mA) = 0-95(Typ.) Low Noise : NF (2) = ldB (Typ.), lOdB (Max.)

2sa1793

Abstract: 2sc4657
Contextual Info: 2SA1793 SILICON PNP EPITAXIAL TYPE Unit in mm HIGH CURRENT SW ITCHING APPLICATIONS. • • • • Excellent hpE Linearity : hpE 120~400 at V c e = —IV, l£ = —1A Low Collector Saturation Voltage : v CE sat = -0.4V(M ax.) at I c = -3 A , Ib = -0.15A High Power Dissipation : PQ = 1.3W(Ta = 25°C)

L126

Contextual Info: CATALOG MICRO SWITCH 2LS1 —L a Honeywell Division FED. MFG. CODE LISTING SWITCH-ENCLOSED 91929 I / _l CN LISTING 1.03 .357 .66 DIA .065 MAX PRETRAVEL o CAT AL OG CORROSION RESISTANT STEEL PLUNGER Q 1.330 —.030 OPERATING POSITION o m tO 8 - 3 2 UNC PAN HEAD SCREW

MG300M1UK2

Contextual Info: MG300M1UK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain: hpj?=80 Min. (Ic=300A) . Low Saturation Voltage

Contextual Info: Ordering num ber:EN 3712 SA\YO 2SC4547 %No.3712 NPN Planar Silicon Darlington Transistor i 85V/3A Driver Applications A pplications • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . F eatures •High DC current gain.

Contextual Info: Milliard M EDIUM IM P E D A N C E TR IO D E T h e H L 13 is an indirectly heated medium impedance Triode for use in D .C ./A .C . mains receivers. DIM ENSIONS Ov ;raU le n g t h .10 1 mm. Overall d ia m e te r. 44 mm. CO N N EC T IO N S

Contextual Info: L, Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N4296 2N4298 2N4299 NPN SILICON POWER TRANSISTOR TO-66 MAXIMUM RATINGS (TC = 25°C) SYMBOL VCBO VCEO VEBQ Collector-Base Voltage Collector-Emitter Voltage

1109

Contextual Info: RN1107,1108,1109 {RN1107 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 1.6±0.2 AND DRIVER CIRCUIT APPLICATIONS. • With Built-in Bias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts and Manufacturing Process • Complementary to RN2107~2109

Contextual Info: TOSHIBA 2SC2235 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2235 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. 5.1 MAX DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA965. 0.75MAX 1.0M AX 0.8MAX as 0.6 MAX MAXIMUM RATINGS (Ta = 25°C)

HD64F3664BP

Contextual Info: IC dependence of osc i11 at inq character ist ics HD64F3664BP FCR4.0MC5 - S Room Temp. Udd [U] 5 itema~e HD64F3664BP - 06 Udd= 5 [U1 G- 0 Typical a. U1H/U1L [Ul 48 : uih V - — l— - j - = I I 1 I UlLT J1—- j•- i- Jl —, ~'i .-r« . b. U2H/U2L EU]

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 Unit in mm H O RIZO N TAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V cB O ^ 1500V Low Saturation Voltage : VCE sat = 5V (M ax.)(Ic = 5A, IB = 1.0A) High Speed : tf= 0.3/us (Typ.) Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin.

T523

Abstract: EN4135 2SA1855 2SC483
Contextual Info: O rdering num ber: EN413S 2SA1855/2SC4837 No.4135 SAiYO PNP/NPN Epitaxial P lanar Silicon Transistors i 50V/4A Switing Applications A p p licatio n s •Power supplies, relay drivers, lamp drivers. F e a tu re s • Adoption of FBET and MBIT processes. • Large allowable collector dissipation.

2SC2118

Contextual Info: T O S H IB A { D I S C R E T E / O P T O } 9097250 TO SHIBA ~SÍ DE I *1[H72SG O D O T M T S E | <D I S C R E T E / O P T O SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS. Unit in mm Zfa3 9 MAX- gfe.5MAX. FEATURES : . Output Power :

LTA 703 S

Abstract: amplifier shf
Contextual Info: GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE FIELD EFFECT TRANSISTOR 2SK2331 U nit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain : Ga = lld B (f= 12GHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

kn266

Abstract: 1969
Contextual Info: R N 1 9 6 7 , 1 9 6 8 ,1 9 6 9 RN1967 Unit in mm 2.1±0.1 SW ITCH IN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCU IT APPLICATIONS. • • • • • 1.25*0.1 -16 to Including Two Devices in US6 (Ultra Super Mini Type 6 leads) With Built-in Bias Resistors