IHM-2 15 10 Search Results

Contextual Info: co CO O 1 0 '* 00 o s 10 CM r- 10 0) 5 W 'S c C CO CD £ +w CO Ï to •c e IHM o CD * 3 * *i ? - O T- 3 00 Ü c Item Material Finish © PBT+15%GF BLACK BRASS NICKEL PLATED P-BRONZE NICKEL PLATED 2 i Tolerances REV. DATE DESCRIPTION REV. BY CHK. BY DRAWN BY

BUSBAR calculation

Abstract: BUSBAR calculation datasheet rogers busbar Ansys led A copper busbar voltage drop i300a busbar design ansys BUSBAR Fz2400
Contextual Info: Thermal Properties of Power Terminals in High Power IGBT Modules A. Cosaert1, M. Beulque1, M. Wölz2, O. Schilling2, H. Sandmann2, R. Spanke2, K. Appelhoff2 1 2 Rogers NV, Gent, Belgium eupec GmbH, Warstein, Germany Abstract Power dissipation in the leads of IGBT modules has to be taken into account for modern inverter design. This is

ZENERDIODEN

Abstract: AN2002-07
Contextual Info: APPLICATION NOTE Datum: 2002-06-10 Seite 1 von 2 AN-Nummer: AN2002-07 Montagehinweise für IHM & IHV Module Handhabung IGBTs sind elektrostatisch empfindliche Bauelemente. Während des Einbaus der Module sind Gate und Hilfsemitter durch eine leitende Verbindung kurzzuschließen, um eine Zerstörung durch statische

140X130

Abstract: AN2002-07 module RBSOA
Contextual Info: APPLICATION NOTE Date: 2002-06-10 Page 1 of 2 AN-Number: AN2002-07 Mounting instructions for IHM & IHV modules handling IGBTs are electrostatic-sensitive devices. While handling the modules, gate and auxiliary emitter terminals must be short-circuited by a metal

wpc8763ldg

Abstract: RTM875T-606 CX20561 toshiba satellite l50 WPC8763 fds8884 OZ129T winbond wpce775 isl88731 CX20561-12Z
Contextual Info: 1 2 3 4 5 6 7 8 TE1 Block Diagram PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND A HDMI HDMI Transmitter Sil1392 Page 21 LAYER 3 : IN1 Azalia CLOCK GENERATOR Intel CK505 ICS9LPR363 Page 21 Merom LAYER 4 : IN2 Page 2 A 35W CRT Page 20 LAYER 5 : VCC Page 3,4 LAYER 6 : BOT

FZ1200r16KF4

Abstract: siemens igbt IGBT FZ1200 IGBT Power Module siemens ag eupec fz1200 FZ1200R16 FZ1200R17KF6 driver igbt SIEMENS 7400A SCHEMATIC POWER SUPPLY WITH IGBTS
Contextual Info: Technical Improvements in 1700V High Power Modules with Rated Currents up to 2400A“ * O. Schilling, F. Auerbach , R. Spanke, M. Hierholzer eupec GmbH, Max Planck Str. 1, D-59581 Warstein-Belecke * Siemens AG, Semiconductor-PS, Balanstraße 73, D-81541 Munich

ic tea 810

Abstract: MC10190
Contextual Info: MOTOROLA M E C L UK QUAD MST TO MECL 10.000 TRANSLATOR The MC101090 is a quad translator for interfacing from IBM MST-type logic signals to standard MECL 10,000 logic levels. This circuit features differential inputs fo r high noise environments or may be used w ith single ended lines by tieing one of the inputs

99V0

Abstract: vsd9a t 99v0
Contextual Info: po u ju j p e/ 5 6 9 8 £ cl iu o/ e u j O L ]/ S698£ d 0 L : 00 ; 6 0 bGÀVW GO L A3d L do 13 3 H 5 9 N I M 3 1V 0 S I 0 0 9 0 X ¥ d Q £ ¿ ¿ 0 0 o N iH v a a 3Q03 1H 9 I3 M 39V0 03dS 8A 96 3HVN AON N O U V O IId d V osds lo n a o a a s a N o a t

MC10190

Contextual Info: MOTOROLA MC10190 QUAD MST TO MECL 10,000 TRANSLATOR QUAD MST TO MECL 10,000 TRANSLATOR T h e M C 10109Q is a q u a d tra n s la to r fo r in te rfacing fro m IB M M S T -ty p e logic signals to stan d a rd M E C L 1 0 ,000 logic levels. This circuit fe a tu re s d iffe re n tia l inputs fo r high noise e n v iro n m e n ts or

CX20561

Abstract: cx20561-12z toshiba satellite c655 toshiba satellite c640 cx2056 wpc8763ldg 31TE1MB01N0 intel 4965AG g909 WPCE775
Contextual Info: 1 2 3 4 5 6 7 8 VER : E3D Description 31TE1MB0010 TE1M MB PM45/RB/MS WO CPU 31TE1MB0120 TE1M MB(PM45/MAIN/RB/HDMI/CIR)WO CPU 31TE1MB0130 TE1M MB(GM45/EXP/NO CIR/MS)WO CPU 31TE1MB0140 TE1M MB(GM45/GS/EXP/MS)WO CPU 31TE1MB0170 TE1M MB(GM45/GS/EXP/LC)WO CPU PENRYN

Eupec Power Semiconductors

Abstract: AN2002-07 module RBSOA
Contextual Info: APPLICATION NOTE Date: 02.12.13 Page 1 of 3 AN-Number: AN2002-13 replaces AN2002-07 Mounting instructions for IHM & IHV modules • handling IGBTs are electrostatic-sensitive devices. While handling the modules, gate and auxiliary emitter terminals must be short-circuited by a metal

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1000S33HE3 IHM-BModul IHM-Bmodule VCES = 3300V IC nom = 1000A / ICRM = 2000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD500S33HE3 IHM-BModul IHM-Bmodule VCES = 3300V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme

Contextual Info: -7 P ° , 3P 180' 4P 210' 5P 180' 5P 240' 5P 360' 6P 240' 7P 270' 8P 270' 2 8 . 3 ± 0.1 4 .6 ± 0.1 1 _ d_. . . M r H - 10.5±0.05 i a 2.0±0.05 i . . t 3.0±0.1 1 i ♦ 13.1±0.1 1 Jtjqr1 10.7±0.0 5 in ♦ 13.10±O.15 — 1 fs 1i n CO 10.7±0.1 I— 1.25±0.0£

i12500

Abstract: sonion industrial
Contextual Info: 3P 180' 4P 210' 5P 180' 5P 240' 5P 360' 6P 240' 7P 270' 8P 270' 28.3±0.1 4 .6 ± 0.1 13.1±0.1 10.5±0.05 kO 1 p.7±o.q in u n in n ru n u n DnD [u juD üM iu iu ü u iju ijij 13 .10 ± O .15 a t_ T B 2.0±0.05 o +1 & to CD 10.7±0.1 3.0±0.1 i—1.25±0.05

DD1000S33HE3

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1000S33HE3 IHM-BModul IHM-Bmodule VorläufigeDaten/PreliminaryData VCES = 3300V IC nom = 1000A / ICRM = 2000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1000S33HE3 IHM-BModul IHM-Bmodule VCES = 3300V IC nom = 1000A / ICRM = 2000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD1000S33HE3 IHM-BModul IHM-Bmodule VorläufigeDaten/PreliminaryData VCES = 3300V IC nom = 1000A / ICRM = 2000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD500S33HE3 IHM-BModul IHM-Bmodule VCES = 3300V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter • USV-Systeme

heatsink catalogue

Abstract: FS450R12KE3 3rd Generation of 1200V IGBT Modules FS300R12KE3 Econo PIM The internal structure module IGBT FS300R12KE3 FS150R12KE3G half bridge converter 2kw High Voltage Busbar inverter techniques
Contextual Info: EconoPACK+ A new IGBT module for optimized inverter solutions M. Münzer, M.Hornkamp eupec GmbH & Co.KG, Warstein 08.2000 So called EconoPACK and EconoPIM modules with solderable pin terminals have changed the structure of inverters in application up to 20kW. Above 100 kW IHM modules have set a new

Contextual Info: I Antorderunqsstufe Firmensiqnet Dote Code r class ' Z 3d V lim i "I 1 iß II J 1 xxxxxxx INd3 / y uüuuu 2 10 x 2 -20 EE-Zane für durchkontaktierte Lacher 0O.6±O.O5 4 x 2 - 8 com pliant za rie fo r thru ta le 0 0 .6 *0 .0 5 * 0.2 Ebene - Le ve l 3 BestückungspLon - contact la yo u t

Contextual Info: 13 12 11 10 -CENTERLINE OF PIN IN AREA SHOWN DIM. A NOT TO VARY FROM CENTERLINE OF PIN AT DATUM CKTS. NO. OF -D- BY • D IM .B MORE THAN .0 0 8 IN ANY DIRECTION DIM. B o - SEE D E TAIL 3 (2.54±.05 ( .I00±.002 ( TYP. BETWEEN ANY TWO CONSECUTIVE CKTS AT DATUM

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules DD500S33HE3 IHM-BModul IHM-Bmodule VorläufigeDaten/PreliminaryData VCES = 3300V IC nom = 500A / ICRM = 1000A TypischeAnwendungen • Mittelspannungsantriebe • Motorantriebe • Traktionsumrichter

infineon power cycling igbt3

Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Contextual Info: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,