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    IGC99T120T6RL Search Results

    IGC99T120T6RL Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IGC99T120T6RL
    		Infineon Technologies IGBT Chips; Package: --; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 100.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; Original PDF 72.05KB 5
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    IGC99T120T6RL Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IGC99T120T6RLX1SA2

    - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC99T120T6RLX1SA2)
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    Avnet Americas IGC99T120T6RLX1SA2 Waffle Pack 37
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    IGC99T120T6RL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IGC99T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC99T120T6RL L7683C, PDF

    Contextual Info: IGC99T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC99T120T6RL L7683C, PDF

    nokia+6150+cid

    Contextual Info: IGC99T120T6RL IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives


    Original     		IGC99T120T6RL L7683C, nokia+6150+cid PDF