IGBT W 15 NK 90 Z Search Results

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP50R07U1E4

F4-50R12KS4

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F4-50R12KS4_B11

Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FP50R07U1E4 PressFIT/NTCサーミスタ

F4-50R12KS4

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F4-50R12KS4_B11

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R07U1E4

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FP50R07U1E4

F4-75R12KS4

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F4-75R12KS4_B11

Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules FS50R07U1E4 PressFIT/NTCサーミスタ

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F4-50R12KS4_B11

F4-50R12KS4

Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules F4-50R12KS4_B11 EconoPACK 2モジュール高周波スイッチング向け高速IGBT"and SiCダイオード内蔵andPressFIT/ NTCサーミスタ

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R12KT4_B15

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS50R12KT4_B11 EconoPACK 2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管 带有pressfit压接管脚和温度检测NTC

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS75R12KT4_B15

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS75R12KT4_B11 EconoPACK 2模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管 带有pressfit压接管脚和温度检测NTC

F4-75R12KS4

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F4-75R12KS4_B11

TDB6HK180N16RR

Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules TDB6HK180N16RR EconoPACK 2モジュール EconoPACK™2module 暫定データ/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A 一般応用

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules TDB6HK180N16RR EconoPACK 2模块 EconoPACK™2module 初步数据/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A 典型应用 • 有源整流器 • 三相半控整流桥 TypicalApplications

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules TDB6HK180N16RR EconoPACK 2Modul EconoPACK™2module VorläufigeDaten/PreliminaryData VCES = 1200V IC nom = 180A / ICRM = 360A TypischeAnwendungen • AktiverGleichrichter • HalbgesteuerteB6-Brücke

M60030

Contextual Info: MOTOROLA O rder this docum enti by M HPM 7A30A 60B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule MHPM7A30A60B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A30E60DC3)

MHPM7A20A60A

Contextual Info: MOTOROLA O rder this documents by M HPM 7A20A 60A/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule M H PM 7A20A60A Integrated Power Stage for 2.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A20E60DC3)

Contextual Info: MOTOROLA O rder this docum enti by M HPM 7A16A 120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Pow er M odule M H P M 7A 1 6 A 1 2 0 B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3)

IRGPC40

Contextual Info: INTERNAT ION AL RECTIFIER 4055452 QGlübai 1 • 2bE D Data Sheet No. PD-9.665 t - 3 ^ - 0 3 INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC40 600V, 40A FEATURES 600V, 40A, TO-247AC IGBT International Rectifier's IRG series of Insulated Gate

IGBT W 20 NK 50 Z

Abstract: diode bridge LT 405 IRG4BC10UD IGBT W 15 NK 90 Z
Contextual Info: PD -9.1677A IRG4BC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IGBT W 20 NK 50 Z

Abstract: IGBT W 15 NK 90 Z IGBT W 18 NK 80 Z IRG4BC20FD
Contextual Info: PD 9.1601 IRG4BC20FD PRELIMINARY Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter