IGBT TRANSISTOR 1200V, 25A Search Results

Contextual Info: V23990-P629-FXX-PM final data sheet V23990-P629-F54-01-14 flow0 Maximum Ratings / Höchstzulässige Werte Parameter Condition P629-F54 1200V/25A Symbol Datasheet values Unit max. Transistor H-bridge IGBT Transistor H-Brücke(IGBT) Collector-emitter break down voltage

V23990-P629-F56-PM

Abstract: V23990-P629F
Contextual Info: V23990-P629-F56-PM final data sheet flow0 V23990-P629-F56-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition P629-F56 1200V/25A Symbol Datasheet values Unit max. Transistor H-bridge IGBT Transistor H-Brücke(IGBT) Collector-emitter break down voltage

Contextual Info: V23990-P629-FXX-PM final data sheet flow0 V23990-P629-F46-01-14 Maximum Ratings / Höchstzulässige Werte Parameter Condition P629-F46 1200V/25A Symbol Datasheet values Unit max. Transistor H-bridge IGBT Transistor H-Brücke(IGBT) Collector-emitter break down voltage

Contextual Info: V23990-P629-F44-14-PM final data sheet flow0 Maximum Ratings / Höchstzulässige Werte Parameter Condition V23990-P629-F44-01-14 P629-F44 1200V/25A Symbol Datasheet values Unit max. Transistor H-bridge IGBT Transistor H-Brücke(IGBT) Collector-emitter break down voltage

SCHEMATIC 10kw POWER SUPPLY WITH IGBTS

Abstract: 100A/IGBT DRIVER SCHEMATIC schematic diagram UPS 10kw SCHEMATIC 100kw POWER SUPPLY WITH IGBTS schematic diagram UPS inverter 1kv TD350 FP50R12KE3 schematic diagram 24v UPS AN1944 schematic diagram UPS inverter
Contextual Info: AN1944 Application note Developing IGBT applications using an TD350 advanced IGBT driver Introduction The TD350 is an advanced Insulated Gate Bipolar Transistor IGBT driver with integrated control and protection functions. The TD350 is especially adapted for driving 1200V IGBTs

transistor c295

Contextual Info: bitemational pd-9.1120 jjjg Rectifier_IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features VCES= 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UG25N120 Preliminary Insulated Gate Bipolar Transistor 1200V NPT TRENCH IGBT  DESCRIPTION 1 The UTC UG25N120 is an NPT ignition Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, high avalanche ruggedness, low saturation

D-10

Abstract: IRGPH50FD2
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 1200V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

Contextual Info: IRGP30B120KD-EP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Motor Control Co-Pack IGBT C Features • • • • • • • • VCES = 1200V Low VCE on Non Punch Through (NPT) Technology Low Diode VF (1.76V Typical @ 25A & 25°C)

IR 1838 T

Abstract: 5C100A D-10 IRGPH50FD2
Contextual Info: PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 1200V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

IRGPH50FD2

Abstract: D-10 5C100A
Contextual Info: PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 1200V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

motor IG 2200 19 x 00 15 r

Abstract: 12v dc motor IG 2200 19
Contextual Info: PD- 93818 IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

600V 25A Ultrafast Diode

Abstract: GE power diode IC OZ 9936 in 4436 Ir 900v 60a ir igbt 1200V 40A 035H IRGP30B120KD-E PW80 irgp30b120
Contextual Info: PD- 93818A IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 s Short Circuit Capability

I.C LA 3778

Abstract: transistor on 4436 IRGP30B120KD-E AK 2118 250 KD res transistor VCE 1000V 30A GE-5045
Contextual Info: PD- 93818 IRGP30B120KD-E Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • Low VCE on Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability

IRGPH50F

Contextual Info: PD - 9.761A IRGPH50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 1200V VCE(sat) ≤ 2.9V

IRGPH50F

Contextual Info: PD - 9.761A IRGPH50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 1200V VCE(sat) ≤ 2.9V

IRGP20B120UD-E

Abstract: IGBT Transistor 1200V, 25A
Contextual Info: PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V • UltraFast Non Punch Through NPT Technology • Low Diode VF (1.67V Typical @ 20A & 25°C) • 10 µs Short Circuit Capability

transistor c295

Contextual Info: International H !Rectifier P D - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT V ces = 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

Transistor GE 44

Abstract: tyco igbt
Contextual Info: V23990-P188-A10 flow PIM 2, 1200V, 36A Version 0601 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Input Rectifier Bridge Gleichrichterbrücke Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung

morocco p3

Abstract: mosfet 1200V 40A IGBT Transistor 1200V, 25A mosfet 1200V 25A ir igbt 1200V 40A STTA2512P TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE IGBT Transistor 2.5a transistor marking p3 transistor P1 P 12
Contextual Info: STTA2512P  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS 25A VRRM 1200V trr typ 60ns VF (max) 1.9V K A IF(AV) FEATURES AND BENEFITS A ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. VERY LOW OVERALL POWER LOSSES IN

Contextual Info: r z 7 SCS-THOMSON LI OT iOûS 7#® 5 STTA5012T(V 112 ^ TURBOSWITCH “A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS If(av ) 25A V rrm 1200V trr (typ) 65ns V f (max) 1.85 V STTA5012T(V)1 STTA5012T(V)2 FEATURES AND BENEFITS • ULTRA-FAST, SOFT AND NOISE-FREE

TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE

Abstract: transistor C 2240
Contextual Info: STTA5012T V 1/2  TURBOS WITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE PRELIMINARY DATA MAIN PRODUCTS CHARACTERISTICS IF(AV) 25A VRRM 1200V trr (typ) 65ns VF (max) 1.85V K2 A2 A2 K1 K1 A1 K2 A1 STTA5012T(V)1 STTA5012T(V)2 FEATURES AND BENEFITS ULTRA-FAST, SOFT AND NOISE-FREE

100C

Abstract: EMP25P12B shunt resistor current motor
Contextual Info: Bulletin I27149 01/03 EMP25P12B PIM+ EMP Features: Package: Power Module: • • • • NPT IGBTs 25A, 1200V 10us Short Circuit capability Square RBSOA Low Vce on (2.28Vtyp @ 25A, 25°C) Positive Vce(on) temperature coefficient Gen III HexFred Technology

75RA-120

Abstract: IGBT Transistor 1200V, 25A UV diode 200 nm emitter
Contextual Info: 7MBP 75RA-120 IGBT IPM 1200V 6x75A+Chopper Intelligent Power Module R-Series n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter