IGBT T3 INFINEON Search Results

infineon power cycling igbt3

Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Contextual Info: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F3L75R12W1H3_B27 VorläufigeDaten/PreliminaryData J VCES = 1200V IC nom = 75A / ICRM = 150A TypischeAnwendungen • 3-Level-Applikationen • SolarAnwendungen TypicalApplications

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A TypischeAnwendungen • 3-Level-Applikationen • SolarAnwendungen TypicalApplications • 3-Level-Applications • SolarApplications

F3L80R12W1H3

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules F3L80R12W1H3_B11 VorläufigeDaten/PreliminaryData

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A 典型应用 • 三电平应用 • 太阳能应用 TypicalApplications • 3-Level-Applications • SolarApplications 电气特性 • 低电感设计

Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A 一般応用 • 3レベル アプリケーション • ソーラーアプリケーション TypicalApplications

Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A 一般応用 • 3レベル アプリケーション • ソーラーアプリケーション TypicalApplications

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Modul IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A TypischeAnwendungen • 3-Level-Applikationen • SolarAnwendungen TypicalApplications • 3-Level-Applications • SolarApplications

F3L80R12W1H3

Abstract: E83335
Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L80R12W1H3_B11 EasyPACK模块采用第二类中点钳位拓扑带有pressfit压接管脚和温度检测NTC 初步数据/PreliminaryData

F3L80R12W1H3

Abstract: igbt T3 infineon
Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules F3L80R12W1H3_B11 EasyPACKモジュールニュートラル ポイント クランプ2トポロジー内蔵andPressFIT/NTCサーミスタ

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-Module F3L75R12W1H3_B27 J VCES = 1200V IC nom = 75A / ICRM = 150A 典型应用 • 三电平应用 • 太阳能应用 TypicalApplications • 3-Level-Applications • SolarApplications 电气特性 • 低电感设计

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules F3L75R12W1H3_B27 初步数据/PreliminaryData J VCES = 1200V IC nom = 75A / ICRM = 150A 典型应用 • 三电平应用 • 太阳能应用 TypicalApplications • 3-Level-Applications • SolarApplications

Contextual Info: テクニカルインフォメーション/TechnicalInformation IGBT-モジュール IGBT-modules F3L75R12W1H3_B27 暫定データ/PreliminaryData J VCES = 1200V IC nom = 75A / ICRM = 150A 一般応用 • 3レベル アプリケーション • ソーラーアプリケーション

Econo

Abstract: TRI-PAC Econo PIM infineon igbt power solar inverter IGBT f4 The field stop IGBT FS IGBT igbt T3 infineon
Contextual Info: Product Brief Main Features Easy & Econo Modules • ■ ■ ■ ■ THE EasyPIM /EasyPACK as well as the EconoPIM™/EconoPACK™ family were developed in order to have a cost effective compact design as well as simplified and reliable mounting. Therefore, Infineon offers an optimized

IGBT DRIVER SCHEMATIC chip

Abstract: The field stop IGBT FS IGBT infineon igbt3 1200v IGBT3 infineon IGBT DRIVER SCHEMATIC AN2003-03 igbt3 rg EICEDRIVER 4kA IGBT IGBT CHIP 1700V
Contextual Info: APPLICATION NOTE Seite 1 von 6 Datum:2003-04-08 AN-Nummer: AN2003-03 Switching behavior and optimal driving of IGBT3 modules 1. Chip Technology The IGBT chip of the third generation IGBT3 has a trench structure and combines the advantages of PT and NPT technologies thanks to an additional n-doped layer, known as the Field Stop (FS) layer, within the NPT

ff450r12me3

Abstract: C28T sod6 SOT23 transistor R2C t60403-d4615 C-EUC1206 IGBT DRIVER SCHEMATIC 2ED100E12 ge c30b IGBT DRIVER SCHEMATIC chip
Contextual Info: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-11-02 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.

VAC t60403

Abstract: ff450r12me3 SOD323R T60403 IGBT DRIVER SCHEMATIC t60403-d4615 T60403-D4615-X054 2ED100E12 AN2007-04 IGBT DRIVER SCHEMATIC chip
Contextual Info: Application Note, V1.2, Aug. 2009 AN2008-02 2ED100E12-F2_EVAL 6ED100E12-F2_EVAL Evaluation Driver Board for EconoDUAL 3 and EconoPACK™+ modules Industrial Power Edition 2009-10-07 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2009.

AN2009-07

Abstract: 1ED020I12-F IGBt driver 1ed020I12-F basic principle of ups system 1ED020I12F
Contextual Info: Application Note, V1.0, August 2009 AN2009-07 M I P A Q s e r ve Module with adapted driver electronics Industrial Power Edition 2010-04-20 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2010. All Rights Reserved.

DT25N

Contextual Info: Power Module Design for an Ultra Efficient Three-Level Utility Grid Solar Inverter Michael Frisch, Vincotech GmbH, Email: Michael.Frisch@vincotech.com Temesi Ernö, Vincotech Kft., Email: Erno.Temesi@vincotech.com Abstract The race to achieve highest efficiency had engineers turning to innovative topologies and

Transistor C1173

Abstract: L1210 tyco resolver C1173 transistor transistor c929 Transistor C1173 1A Tx C1173 transistor 6ED100HP1-FA C1211 transistor C1161
Contextual Info: HybridPACK Hybrid Kit for HybridPACK™1 Evaluation Kit for Applications with HybridPACK™1 Module Application Note V2.3, 2010-10-15 System Engineering Edition 2010-10-15 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

Contextual Info: Power Module Design for an Ultra Efficient Three-Level Utility Grid Solar Inverter Michael Frisch, Vincotech GmbH, Email: Michael.Frisch@vincotech.com Temesi Ernö, Vincotech Kft., Email: Erno.Temesi@vincotech.com Abstract The race to achieve highest efficiency had engineers turning to innovative topologies and

ice3b0565g

Abstract: ERNI rel 37 ANIP9931E erni rel 07 zener diode sod80 erni rel 14 Phycom 78045 IC 78045 CiPoS IKCS12F60AA
Contextual Info: Preliminary Version 1.1, December 2007 Application Note AN-EVAL-IKCS12F60AA-1 CIPOS IKCS12F60AA Evaluation Board Published by Infineon Technologies AG http://www.infineon.com Power Management & Drives N e v e r s t o p t h i n k i n g CIPOS™ Evaluation Board with IKCS12F60AA

IKCS12F60F2A

Abstract: 1N4148 IKCS12F60F2C LM393 calculation of IGBT snubber
Contextual Info: Application Note, V1.0, Feb. 2009 Control integrated Power System CIPOS R e f e r e n c e B o a r d f o r C I P O S TM IKCSxxF60F2x AN-CIPOS-Reference Board-4 Authors: Junbae Lee http://www.infineon.com/cipos Power Management & Drives Control integrated Power System (CIPOS™)

transistor WL 431

Abstract: IKCS12F60AA CiPoS IKCS12F60AA Comparator IC for shunt resistor 2N2222 LM393 Q1 2N2222 NPN calculation of IGBT snubber
Contextual Info: Application Note, V1.0, Jun. 2008 Control integrated Power System CIPOS R e f e r e n c e B o a r d f o r C I P O S TM IKCS12F60AA AN-CIPOS-Reference Board-1 Authors: Junbae Lee http://www.infineon.com/cipos Power Management & Drives Control integrated Power System (CIPOS™)