Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    IGBT MODULE P11 Search Results

    IGBT MODULE P11 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT50J123
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 59 A, TO-3P(N) Datasheet
    GT20J121
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, TO-220SIS Datasheet
    GT30J121
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT30J122A
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    SF-10GSFPPLCL-000
    		Amphenol Cables on Demand Amphenol SF-10GSFPPLCL-000 SFP+ Optical Module - 10GBASE-SR (up to 300m/984') SFP+ Multimode Optical Transceiver Module (Duplex LC Connectors) - Cisco & HP Compatible PDF

    IGBT MODULE P11 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04010R5 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		igbt-sp-04010r5mbm600e17d000cycles PDF

    Measurement of stray inductance for IGBT

    Abstract: circuit diagram for igbt hitachi igbt igbt module p11
    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-04010R4 P1 MBM600E17D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		igbt-sp-04010r4mbm600e17d000cyclesmeasurement of stray inductance for igbt+3circuit diagram for igbthitachi igbtigbt module p11 PDF

    corrosion inhibitor

    Abstract: Hitachi DSA00281
    Contextual Info: Dual IGBT Module Spec.No.IGBT-SP-10006-R2 MBM600F17D PRELIMINARY SPECIFICATION Silicon N-channel IGBT FEATURES * High speed, low loss IGBT module. * Low driving power due to low input capacitance MOS gate. * Low noise due to ultra soft fast recovery diode.


    Original     		igbt-sp-10006-r2mbm600f17d000cycles50hwhole+2corrosion inhibitorhitachi dsa00281 PDF

    G15BB

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09025 R5 P1 MBN500H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		igbt-sp-09025mbn500h65e2000cyclesg15bb PDF

    Hitachi DSA00281

    Abstract: 30s1200
    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09025 R2 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		igbt-sp-09025mbn500h65e2000cycleshitachi dsa00281+130s1200 PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09025 R4 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		igbt-sp-09025mbn500h65e2000cycles PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09025 R3 MBN500H65E2 P1 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.


    Original     		igbt-sp-09025mbn500h65e2000cycles PDF

    MBN1500E33E2

    Abstract: ls290 MBN1500E33E nff 16-102 IC1500 GC 72
    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08002 R5 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		igbt-sp-08002mbn1500e33e2000cyclesls290+4mbn1500e33enff 16-102ic1500gc 72 PDF

    MBN1500E33E2

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08002 R7 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		igbt-sp-08002mbn1500e33e2000cycles PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R10 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		igbt-sp-09008mbn750h65e2000cycles PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-08002 R6 MBN1500E33E2 Silicon N-channel IGBT 3300V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		igbt-sp-08002mbn1500e33e2000cycles PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R9 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		igbt-sp-09008mbn750h65e2000cycles PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R8 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		igbt-sp-09008mbn750h65e2000cycles PDF

    IGBT 6500V

    Abstract: Hitachi DSA00281
    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R7 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		igbt-sp-09008mbn750h65e2000cyclesigbt 6500v+1hitachi dsa00281 PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-12023 R3 MBM250H33E3 Preliminary Specification Silicon N-channel IGBT 3300V E3 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.


    Original     		igbt-sp-12023mbm250h33e3 PDF

    MBN750H65E2

    Abstract: IGBT 6500V 09008
    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R6 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		igbt-sp-09008mbn750h65e2000cyclesigbt 6500v+109008 PDF

    Contextual Info: IGBT MODULE Spec.No.IGBT-SP-12023 R1 MBM250H33E3 Preliminary Specification Silicon N-channel IGBT 3300V E3 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.


    Original     		igbt-sp-12023mbm250h33e3 PDF

    skhi 24 r

    Contextual Info: SKHI 21A R . power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter Absolute Maximum Ratings Symbol Conditions Values Units  % &)25$


    Original     		skhi 24 r PDF

    2MBI400TB-060

    Abstract: ED-4701 2mbi400tb 2MBI400TB060
    Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI400TB-060 Spec. No. : MS5F 5293 Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 22 '02 Y.Kobayashi Oct. 23 '02 T.Miyasaka K.Yamada T.Fujihira MS5F 5293 1 14 a b c H04-004-07 Revised Records Date Classification


    Original     		2mbi400tb-060h04-004-07p7/14p11/14+4h04-004-03ed-47012mbi400tb2mbi400tb060 PDF

    2MBI400TB-060

    Abstract: ED-4701 5293
    Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI400TB-060 Spec. No. : MS5F 5293 Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 22 ’02 Y.Kobayashi T.Fujihira Oct. 23 ’02 T.Miyasaka K.Yamada MS5F 5293 a b 1 14 H04-004-07 Revised Records Date Classification


    Original     		2mbi400tb-060h04-004-07p7/14p11/14+3h04-004-03ed-47015293 PDF

    6MBI75UA-120

    Abstract: ED-4701 MT5F12959
    Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI75UA-120 Spec. No. : MS5F 5354 Fuji Electric Co.,Ltd. Matsumoto Factory Jan. 31 ’03 Y.Kobayashi Jan. 31 ’03 T.Miyasaka Jan.- 31- ’03 K.Yamada T.Fujihira MS5F 5354 a 1 13 H04-004-07 Revised Records


    Original     		6mbi75ua-120h04-004-07p4/13p11/13+5h04-004-066mbi75eh04-004-03ed-4701mt5f12959 PDF

    2MBI150U2A-060

    Abstract: ED-4701 M232 MT5F12959 2mbi150u2a
    Contextual Info: SPECIFICATION Device Name : IGBT module Type Name : 2MBI150U2A-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5615 MS5F 5615 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision


    Original     		2mbi150u2a-060ms5f5615h04-004-07bp4/13+7p12/13h04-004-06bh04-004-03aed-4701m232mt5f129592mbi150u2a PDF

    2MBI300U2B-060

    Abstract: 30-.03 m ED-4701 M233 MS5F5617 MT5F12959 2MBI300
    Contextual Info: SPECIFICATION Device Name : IGBT module Type Name : 2MBI300U2B-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5617 MS5F 5617 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision


    Original     		2mbi300u2b-060ms5f5617h04-004-07bp4/13+8p12/13h04-004-06bh04-004-03a30-.03 med-4701m233mt5f129592mbi300 PDF

    2MBI400U2B-060

    Abstract: ED-4701 M233 MT5F12959
    Contextual Info: SPECIFICATION Device Name : IGBT module Type Name : 2MBI400U2B-060 Spec. No. Oct. 30 ’03 S.Ogawa Oct. 30 ’03 S.Miyashita K.Yamada : Y.Seki MS5F5618 MS5F 5618 1 a 13 H04-004-07b R e v i s e d Date Classification Oct.-30 -’03 Enactment Jan.-16 -’04 Revision


    Original     		2mbi400u2b-060ms5f5618h04-004-07bp4/13+6p12/13h04-004-06bh04-004-03aed-4701m233mt5f12959 PDF