MGP20N40CL
Abstract: NT 407 F TRANSISTOR TO 220 MGP20N40CL-D
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
|
Original
|
MGP20N40CL/D
MGP20N40CL
MGP20N40CL/D*
MGP20N40CL
NT 407 F TRANSISTOR TO 220
MGP20N40CL-D
|
PDF
|
NT 407 F TRANSISTOR TO 220
Abstract: MOTOROLA TRANSISTOR T2 NT 407 F MOSFET TRANSISTOR MGP20N40CL 632 transistor motorola mosfet ignition coil NT 407 F TRANSISTOR
Contextual Info: MOTOROLA Order this document by MGP20N40CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N40CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 400 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
|
Original
|
MGP20N40CL/D
MGP20N40CL
NT 407 F TRANSISTOR TO 220
MOTOROLA TRANSISTOR T2
NT 407 F MOSFET TRANSISTOR
MGP20N40CL
632 transistor motorola
mosfet ignition coil
NT 407 F TRANSISTOR
|
PDF
|
NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
Contextual Info: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
|
Original
|
MGP20N14CL/D
MGP20N14CL
MGP20N14CL/D*
NT 407 F TRANSISTOR TO 220
NT 407 F MOSFET TRANSISTOR
NT 407 F TRANSISTOR
NT 407 F power transistor
mosfet 407
MGP20N14CL
MOTOROLA TRANSISTOR TO-220
|
PDF
|
8204NG
Abstract: GB8204 NGB8204N NGB8204NT4 NGB8204NT4G GB8204NG
Contextual Info: NGB8204N Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGB8204N
NGB8204N/D
8204NG
GB8204
NGB8204N
NGB8204NT4
NGB8204NT4G
GB8204NG
|
PDF
|
NGB8202NT4G
Abstract: NGB8202AN NGB8202ANT4G NGB8202N NGB8202A
Contextual Info: NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGB8202N,
NGB8202AN
NGB8202N/D
NGB8202NT4G
NGB8202AN
NGB8202ANT4G
NGB8202N
NGB8202A
|
PDF
|
18n40b
Abstract: GB18N40B NGB18N40CLB NGB18N40CLBT4 NGB18N40CLBT4/D
Contextual Info: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGB18N40CLBT4
NGB18N40CLB/D
18n40b
GB18N40B
NGB18N40CLB
NGB18N40CLBT4
NGB18N40CLBT4/D
|
PDF
|
8201N
Abstract: NGD8201N NGD8201NT4
Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGD8201N
NGD8201N/D
8201N
NGD8201N
NGD8201NT4
|
PDF
|
B8202N
Abstract: B8202 B8-202 Direct fuel injection ignition IGBT GB8202N
Contextual Info: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGB8202N
B8202N
B8202
B8-202
Direct fuel injection
ignition IGBT
GB8202N
|
PDF
|
NGP15N41CL
Abstract: NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 Direct fuel injection aac marking
Contextual Info: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped
|
Original
|
NGD15N41CLT4,
NGB15N41CLT4,
NGP15N41CL
r14525
NGD15N41CL/D
NGP15N41CL
NGB15N41CLT4
NGD15N41CL
NGD15N41CLT4
Direct fuel injection
aac marking
|
PDF
|
8201N
Abstract: 20A400 Direct fuel injection ignition IGBT
Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGD8201N
8201N
20A400
Direct fuel injection
ignition IGBT
|
PDF
|
8205N
Abstract: 8205 NGD8205N NGD8205NT4 0000001D
Contextual Info: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGD8205N
NGD8205N/D
8205N
8205
NGD8205N
NGD8205NT4
0000001D
|
PDF
|
G18N40B
Abstract: N40B NGD18N40CLBT4 NGD18N40CLB aac marking g18n40
Contextual Info: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGD18N40CLBT4
NGD18N40CLB/D
G18N40B
N40B
NGD18N40CLBT4
NGD18N40CLB
aac marking
g18n40
|
PDF
|
8201N
Abstract: NGD8201N NGD8201NT4
Contextual Info: NGD8201N Ignition IGBT 20 A, 400 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGD8201N
NGD8201N/D
8201N
NGD8201N
NGD8201NT4
|
PDF
|
NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR MGP20N35CL
Contextual Info: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
|
Original
|
MGP20N35CL/D
MGP20N35CL
NT 407 F TRANSISTOR TO 220
NT 407 F MOSFET TRANSISTOR
NT 407 F TRANSISTOR
MGP20N35CL
|
PDF
|
|
|
|
Contextual Info: NGD8201B Ignition IGBT, 20 A, 400 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGD8201B
NGD8201B/D
|
PDF
|
GB8206
Abstract: NGB8206A NGB8206NG
Contextual Info: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGB8206N,
NGB8206AN
NGB8206N/D
GB8206
NGB8206A
NGB8206NG
|
PDF
|
N40BG
Abstract: G18N40bg G18N40B NGD18N40CLBT4G N40B G18 N40BG NGD18N40CLB NGD18N40CLBT4
Contextual Info: NGD18N40CLB Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGD18N40CLB
NGD18N40CLB/D
N40BG
G18N40bg
G18N40B
NGD18N40CLBT4G
N40B
G18 N40BG
NGD18N40CLB
NGD18N40CLBT4
|
PDF
|
NGD8201ANT4G
Abstract: NGD8201AN NGD8201N NGD8201NT4G NGD8201A ignition IGBT
Contextual Info: NGD8201N, NGD8201AN Ignition IGBT 20 Amp, 400 Volt, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGD8201N,
NGD8201AN
NGD8201N/D
NGD8201ANT4G
NGD8201AN
NGD8201N
NGD8201NT4G
NGD8201A
ignition IGBT
|
PDF
|
B8202
Abstract: b820 NGB8202N NGB8202NT4
Contextual Info: NGB8202N Ignition IGBT 20 A, 400 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGB8202N
NGB8202N/D
B8202
b820
NGB8202N
NGB8202NT4
|
PDF
|
NGB8206N
Abstract: NGB8206NT4
Contextual Info: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGB8206N
NGB8206N/D
NGB8206N
NGB8206NT4
|
PDF
|
b8206n
Abstract: ignition IGBT NGB8206
Contextual Info: NGB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGB8206N
NGB8206N
b8206n
ignition IGBT
NGB8206
|
PDF
|
8205N
Abstract: ignition IGBT
Contextual Info: NGD8205N Ignition IGBT 20 A, 350 V, N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGD8205N
8205N
ignition IGBT
|
PDF
|
G18N40B
Abstract: N40B ignition IGBT g18n40
Contextual Info: NGD18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGD18N40CLBT4
NGD18N40CLBT4
G18N40B
N40B
ignition IGBT
g18n40
|
PDF
|
18n40b
Abstract: GB18N40B GB18N40 ignition IGBT NGB18N40CLBT4
Contextual Info: NGB18N40CLBT4 Ignition IGBT 18 Amps, 400 Volts N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses
|
Original
|
NGB18N40CLBT4
NGB18N40CLBT4
18n40b
GB18N40B
GB18N40
ignition IGBT
|
PDF
|